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A. Svane

Publications and source records attributed to A. Svane.

34 records · Page 2Linked to original sources

Pressure Induced Valence Transitions in f-Electron Systems

A review is given of pressure induced valence transitions in f-electron systems calculated with the self-interaction corrected local spin density (SIC-LSD) approximation. These calculations show that the SIC-LSD is able to describe valence changes as a function of pressure or chemical composition. An important finding is the dual character of the f-electrons as either localized or band-like. A finite temperature generalisation is presented and applied to the study of the p-T phase diagram of the alpha to gamma phase transition in Ce.

cond-mat.supr-con↗

Dynamical mean-field theory of photoemission spectra of actinide compounds

A model of photoemission spectra of actinide compounds is presented. The complete multiplet spectrum of a single ion is calculated by exact diagonalization of the two-body Hamiltonian of the f^n shell. A coupling to auxiliary fermion states models the interaction with a conduction sea. The ensuing self-energy function is combined with a band Hamiltonian of the compound, calculated in the local-density approximation, to produce a solid state Green's function. The theory is applied to PuSe and elemental Am. For PuSe a sharp resonance at the Fermi level arises from mixed valent behavior, while several features at larger binding energies can be identified with quantum numbers of the atomic system. For Am the ground state is dominated by the |f^6;J=0> singlet but the strong coupling to the conduction electrons mixes in a significant amount of f^7 character.

cond-mat.str-el↗

Electronic structure of normal and inverse spinel ferrites from first principles

We apply the self-interaction corrected local spin density %(SIC-LSD) approximation to study the electronic structure and magnetic properties of the spinel ferrites MnFe$_{2}$O$_{4}$, Fe$_{3}$O$_{4}$, CoFe$_{2}$O$_{4}$, and NiFe$_{2}$O$_{4}$. We concentrate on establishing the nominal valence of the transition metal elements and the ground state structure, based on the study of various valence scenarios for both the inverse and normal spinel structures for all the systems. For both structures we find all the studied compounds to be insulating, but with smaller gaps in the normal spinel scenario. On the contrary, the calculated spin magnetic moments and the exchange splitting of the conduction bands are seen to increase dramatically when moving from the inverse spinel structure to the normal spinel kind. We find substantial orbital moments for NiFe$_{2}$O$_{4}$ and CoFe$_{2}$O$_{4}$.

cond-mat.mtrl-sci↗

Valency Configuration of Transition Metal Impurities in ZnO

We use the self-interaction corrected local spin-density approximation to investigate the ground state valency configuration of transition metal (TM = Mn, Co) impurities in n- and p-type ZnO. We find that in pure Zn1-xTMxO, the localized TM2+ configuration is energetically favored over the itinerant d-electron configuration of the local spin density (LSD) picture. Our calculations indicate furthermore that the (+/0) donor level is situated in the ZnO gap. Consequently, for n-type conditions, with the Fermi energy eF close to the conduction band minimum, TM remains in the 2+ charge state, while for p-type conditions, with eF close to the valence band maximum, the 3+ charge state is energetically preferred. In the latter scenario, modeled here by co-doping with N, the additional delocalized d-electron charge transfers into the entire states at the top of the valence band, and hole carriers will only exist, if the N concentration exceeds the TM impurity concentration.

cond-mat.mtrl-sci↗

Electronic structure of rare-earth impurities in GaAs and GaN

The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations of the open 4f shell of the rare-earth ion may be investigated. The defects are modelled by supercells of type REGa$_{n-1}$As$_n$, for n=4, 8 and 16. The preferred defect is the rare-earth substituting Ga, for which case the rare-earth valency in intrinsic material is found to be trivalent in all cases except Ce and Pr in GaN. The 3+ --> 2+ f-level is found above the theoretical conduction band edge in all cases and within the experimental gap only for Eu, Tm and Yb in GaAs and for Eu in GaN. The exchange interaction of the rare-earth impurity with the states at both the valence band maximum and the conduction band minimum is weak, one to two orders of magnitude smaller than that of Mn impurities. Hence the coupling strength is insufficient to allow for ferromagnetic ordering of dilute impurities, except at very low temperatures.

cond-mat.mtrl-sci↗

Self-interaction correction in multiple scattering theory

We propose a simplified version of self-interaction corrected local spin-density (SIC-LSD) approximation, based on multiple scattering theory, which implements self-interaction correction locally, within the KKR method. The multiple scattering aspect of this new SIC-LSD method allows for the description of crystal potentials which vary from site to site in a random fashion and the calculation of physical quantities averaged over ensembles of such potentials using the coherent potential approximation (CPA). This facilitates applications of the SIC to alloys and pseudoalloys which could describe disordered local moment systems, as well as intermediate valences. As a demonstration of the method, we study the well-known $α$-$γ$ phase transition in Ce, where we also explain how SIC operates in terms of multiple scattering theory.

cond-mat.str-el↗

First principles study of rare-earth oxides

The self-interaction-corrected local-spin-density approximation is used to describe the electronic structure of dioxides, REO$_2$, and sesquioxides, RE$_2$O$_3$, for the rare earths, RE=Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy and Ho. The valencies of the rare earth ions are determined from total energy minimization. We find Ce, Pr, Tb in their dioxides to have the tetravalent configuration, while for all the sesquioxides the trivalent groundstate configuration is found to be the most favourable. The calculated lattice constants for these valency configurations are in good agreement with experiment. Total energy considerations are exploited to show the link between oxidation and $f$-electron delocalization, and explain why, among the dioxides, only the CeO$_2$, PrO$_2$, and TbO$_2$ exist in nature. Tetravalent NdO$_2$ is predicted to exist as a metastable phase - unstable towards the formation of hexagonal Nd$_2$O$_3$.

cond-mat.str-el↗

Electronic structure of transition metal impurities in p-type ZnO

The self-interaction corrected local spin-density approximation is used to investigate the ground-state valency configuration of transition metal (TM=Mn, Co) impurities in p-type ZnO. Based on the total energy considerations, we find a stable localised TM$^{2+}$ configuration for a TM impurity in ZnO if no additional hole donors are present. Our calculations indicate that the (+/0) donor level is situated in the band gap, as a consequence of which the TM$^{3+}$ becomes more favourable in p-type ZnO, where the Fermi level is positioned at the top of the valence band. When co-doping with N, it emerges that the carrier-mediated ferromagnetism can be realized in the scenario where the N concentration exceeds the TM impurity concentration. If TM and N concentrations are equal, the shallow acceptor levels introduced by N are fully compensated by delocalised TM d-electrons.

cond-mat.str-el↗

Electronic Structure of Samarium Monopnictides and Monochalcogenides

The electronic structures of SmX (X=N, P, As, Sb, Bi, O, S, Se, Te, Po)compounds are calculated using the self-interaction corrected local-spin density approximation. The Sm ion is described with either five or six localized $f$-electrons while the remaining electrons form bands, and the total energies of these scenarios are compared. With five localized $f$-electrons a narrow $f$-band is formed in the vicinity of the Fermi level leading to an effective intermediate valence. This scenario is the ground state of all the pnictides as well as SmO. With six localized $f$-electrons, the chalcogenides are semiconductors, which is the ground state of SmS, SmSe and SmTe. Under compression the Sm chalcogenides undergo first order transitions with destabilization of the $f$ states into the intermediate valence state, the bonding properties of which are well reproduced by the present theory.

cond-mat.str-el↗

The Electronic Structure of Europium Chalcogenides and Pnictides

The electronic structure of some europium chalcogenides and pnictides is calculated using the {\it ab-initio} self-interaction corrected local-spin-density approximation (SIC-LSD). This approach allows both a localised description of the rare earth $f-$electrons and an itinerant description of $s$, $p$ and $d$-electrons. Localising different numbers of $f$-electrons on the rare earth atom corresponds to different nominal valencies, and the total energies can be compared, providing a first-principles description of valency. All the chalcogenides are found to be insulators in the ferromagnetic state and to have a divalent configuration. For the pnictides we find that EuN is half-metallic and the rest are normal metals. However a valence change occurs as we go down the pnictide column of the Periodic Table. EuN and EuP are trivalent, EuAs is only just trivalent and EuSb is found to be divalent. Our results suggest that these materials may find application in spintronic and spin filtering devices.

cond-mat.str-el↗

Ab initio study of charge order in Fe3O4

We present a self-interaction corrected local spin density (SIC-LSD) study of the electronic structure and possible charge order of magnetite, Fe$_{3}$O$_{4}$. The issue of charge order in magnetite is explored in both cubic and orthorhombic structures, the latter being an approximation to the true, low temperature, monoclinic structure. We find that the Verwey charge ordered phase is not the groundstate solution for this compound neither in cubic nor orthorhombic structure.

cond-mat.str-el↗

Self-interaction Corrected Calculations of Correlated f-electron Systems

The electronic structures of several actinide solid systems are calculated using the self-interaction corrected local spin density approximation. Within this scheme the $5f$ electron manifold is considered to consist of both localized and delocalized states, and by varying their relative proportions the energetically most favourable (groundstate) configuration can be established. Specifically, we discuss elemental Pu in its $δ$-phase, PuO$_2$ and the effects of addition of oxygen, the series of actinide monopnictides and monochalcogenides, and the UX$_3$, X= Rh, Pd, Pt, Au, intermetallic series.

cond-mat.str-el↗

The Spintronic Properties of Rare Earth Nitrides

The electronic structure of the rare earth nitrides is studied systematically using the {\it ab-initio} self-interaction corrected local-spin-density approximation (SIC-LSD). This approach allows both a localised description of the rare earth $f-$electrons and an itinerant description of the valence electrons. Localising different numbers of $f$-electrons on the rare earth atom corresponds to different valencies, and the total energies can be compared, providing a first-principles description of valence. CeN is found to be tetravalent while the remaining rare earth nitrides are found to be trivalent. We show that these materials have a broad range of electronic properties including forming a new class of half-metallic magnets with high magnetic moments and are strong candidates for applications in spintronic and spin-filtering devices.

cond-mat.str-el↗

Ab initio charge, spin and orbital energy scales in LaMnO3

The first-principles SIC-LSD theory is utilized to study electronic, magnetic and orbital phenomena in LaMnO$_{3}$. The correct ground state is found, which is antiferro orbitally ordered with the spin magnetic moments antiferromagnetically aligned. Jahn-Teller energies are found to be the largest energy scale. In addition it is the Jahn-Teller interaction which is the dominant effect in realising orbital order, and the electronic effects alone do not suffice.

cond-mat.str-el↗

Electronic structure of half-metallic double perovskites

We present the self-interaction corrected local spin density (SIC-LSD) electronic structure and total energy calculations, leading also to valencies of the ground state configurations, for the half-metallic double perovskites such as Sr$_{2}$FeMoO$_{6}$, Ba$_{2}$FeMoO$_{6}$, Ca$_{2}$FeMoO$_{6}$, and Ca$_{2}$FeReO$_{6}$. We conclude that the Fe and Mo (or Re) spin magnetic moments are anti-parallel aligned, and the magnitude of the hybridization induced moment on Mo does not vary much between the different compounds. The hybridization spin magnetic moment on Re is of the order of -1.1 $μ_{B}$, while that on Mo is about -0.4 $μ_{B}$, independently of the alkaline earth element. Also the electronic structure of all the compounds studied is very similar, with a well defined gap in the majority spin component and metallic density of states for the minority spin component, with highly hybridized Fe, Mo (or Re), and oxygen bands.

cond-mat.str-el↗

Ab-initio determination of the localized/delocalized f-manifold in UPd_2Al_3

The electronic structure of UPd_2Al_3 is described using the self-interaction corrected local-spin-density approximation to density functional theory. The groundstate is found to be characterized by the coexistence of localized (f^2) and delocalized U f electrons, in agreement with experimental evidence. We observe significant difference in electronic structure between UPd_2Al_3 and the previously studied UPt_3 compound. Even though a trend towards localization exists in UPt_3, the total energies and the density of states at the Fermi level favor a groundstate with localized f^1, rather than f^2 U ions.

cond-mat.str-el↗