arXiv subjects

A. T. Johnson

Publications and source records attributed to A. T. Johnson.

13 recordsLinked to original sources

arXiv2012

Probing Spin-Charge Relation by Magnetoconductance in One-Dimensional Polymer Nanofibers

Polymer nanofibers are one-dimensional organic hydrocarbon systems containing conducting polymers where the non-linear local excitations such as solitons, polarons and bipolarons formed by the electron-phonon interaction were predicted. Magnetoconductance (MC) can simultaneously probe both the spin and charge of these mobile species and identify the effects of electron-electron interactions on these nonlinear excitations. Here we report our observations of a qualitatively different MC in polyacetylene (PA) and in polyaniline (PANI) and polythiophene (PT) nanofibers. In PA the MC is essentially zero, but it is present in PANI and PT. The universal scaling behavior and the zero (finite) MC in PA (PANI and PT) nanofibers provide evidence of Coulomb interactions between spinless charged solitons (interacting polarons which carry both spin and charge).

cond-mat.mes-hall↗

arXiv2010

Nanoparticle Shape Selection By Repulsive Interactions: Metal Islands on Few Layer Graphenes

Metal atoms adsorbed on few layer graphenes condense to form nanometer-size droplets whose growth is size limited by a competition between the surface tension and repulsive electrostatic interactions from charge transfer between the metal droplet and the graphene. For situations where the work function mismatch is large and the droplet surface tension is small, a growing droplet can be unstable to a family of shape instabilities. We observe this phenomenon for Yb deposited and annealed on few layer graphenes and develop a theoretical model to describe it by studying the renormalization of the line tension of a two dimensional droplet by repulsive interparticle interactions. Our model describes the onset of shape instabilities for nanoparticles where the growth is size-limited by a generic repulsive potential and provides a good account of the experimentally observed structures for Yb on graphene.

cond-mat.mes-hall↗

arXiv2005

Controlled Fabrication of Nanogaps in Ambient Environment for Molecular Electronics

We have developed a controlled and highly reproducible method of making nanometer-spaced electrodes using electromigration in ambient lab conditions. This advance will make feasible single molecule measurements of macromolecules with tertiary and quaternary structures that do not survive the liquid-helium temperatures at which electromigration is typically performed. A second advance is that it yields gaps of desired tunnelling resistance, as opposed to the random formation at liquid-helium temperatures. Nanogap formation occurs through three regimes: First it evolves through a bulk-neck regime where electromigration is triggered at constant temperature, then to a few-atom regime characterized by conductance quantum plateaus and jumps, and finally to a tunnelling regime across the nanogap once the conductance falls below the conductance quantum.

cond-mat.mes-hall↗

arXiv2002

Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.

cond-mat.mes-hall↗

arXiv2002

Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field effect at discrete defects along the CNFET length. The depletion surface potential of individual defects is quantified from the SGM-imaged radius of the defect as a function of tip bias voltage. This provides a measure of the Fermi level at the defect with zero tip voltage, which is as small as 20 meV for the strongest defects. The effect of defects on transport is probed by SIM as a function of backgate and tip-gate voltage. When the backgate voltage is set so the CNFET is "on" (conducting), SIM reveals a uniform potential drop along its length, consistent with diffusive transport. In contrast, when the CNFET is "off", potential steps develop at the position of depleted defects. Finally, high-resolution imaging of a second set of weak defects is achieved in a new "tip-gated" SIM mode.

cond-mat.mes-hall↗

arXiv2002

Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for imaging of potential distributions in active micro- and nanoelectronic devices requires quantitative knowledge of tip surface contrast transfer. Here we demonstrate the utility of carbon-nanotube-based circuits to characterize geometric properties of the tip in the electrostatic scanning probe microscopies (SPM). Based on experimental observations, an analytical form for the differential tip-surface capacitance is obtained.

cond-mat.mes-hall↗

arXiv2002

Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the ``on''-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.

cond-mat.mes-hall↗

arXiv2002

Carbon nanotube composites for thermal management

Single-wall carbon nanotubes (SWNTs) were used to augment the thermal transport properties of industrial epoxy. Samples loaded with 1 wt% unpurified SWNT material show a 70% increase in thermal conductivity at 40K, rising to 125% at room temperature; the enhancement due to 1 wt% loading of vapor grown carbon fibers is three times smaller. Electrical conductivity data show a percolation threshold between 0.1 and 0.2 wt% SWNT loading. The Vickers hardness rises monotonically with SWNT loading up to a factor of 3.5 at 2 wt%. These results suggest that the thermal and mechanical properties of SWNT-epoxy composites are improved, without the need to chemically functionalize the nanotubes.

cond-mat.mtrl-sci↗

arXiv2001

Thermal Conductivity of Single Wall Carbon Nanotubes: Diameter and Annealing Dependence

The thermal conductivity, k(T), of bulk single-wall carbon nanotubes (SWNT's) displays a linear temperature dependence at low T that has been attributed to 1D quantization of phonons. To explore this issue further, we have measured the k(T) of samples with varying average tube diameters. We observe linear k(T) up to higher temperatures in samples with smaller diameters, in agreement with a quantization picture. In addition, we have examined the effect of annealing on k(T). We observe an enhancement in k(T) for annealed samples which we attribute to healing of defects and removal of impurities. These measurements demonstrate how the thermal properties of an SWNT material can be controlled by manipulating its intrinsic nanoscale properties.

cond-mat.mtrl-sci↗

arXiv2000

Quantized phonon specrum of single-wall carbon nanotubes

The electronic spectra of carbon nanotubes and other nanoscale systems are quantized because of their small radii. Similar quantization in the phonon spectra has been difficult to observe because of the far smaller energy scale. We probed this regime by measuring the temperature-dependent specific heat of purified single-wall nanotubes. Thee data show direct evidence of one-dimensional quanitized phonon subbands. Above 4 K, they are in excellent agreement with model calculations of individual nanotubes and differ markedly from the specific heat of two-dimensional graphene or three-dimensional graphite. Detailed modeling yields an energy of 4.3 meV for the lowest quantized phonon subband and a tube-tube (or "lattice") Debye energy of 1.1 meV, implying a small intertube coupling in bundles.

cond-mat.mes-hall↗

arXiv2000

Local electronic properties of single wall nanotube circuits measured by conducting-tip AFM

We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position the tip, images formed from the tip-sample tunnel current have single tube resolution (near 1 nm diameter), more than an order of magnitude better than simultaneously acquired topographic AFM images. By finding points where the tip-sample current is zero, it is possible to measure the electrochemical potential within the circuit, again with nanometer resolution. Such measurements provide compelling evidence that nanotubes within a bundle have only weak electronic coupling. Finally the AFM tip is used as a local electrostatic gate, and the gating action can be correlated with the structure of the SWNT bundle sample. This technique should be useful for a broad range of circuits containing SWNTs and other molecules.

cond-mat.mes-hall↗

arXiv1999

Subband population in a single-wall carbon nanotube diode

We observe current rectification in a molecular diode consisting of a semiconducting single-wall carbon nanotube and an impurity. One half of the nanotube has no impurity, and it has a current-voltage (I-V) charcteristic of a typical semiconducting nanotube. The other half of the nanotube has the impurity on it, and its I-V characteristic is that of a diode. Current in the nanotube diode is carried by holes transported through the molecule's one-dimensional subbands. At 77 Kelvin we observe a step-wise increase in the current through the diode as a function of gate voltage, showing that we can control the number of occupied one-dimensional subbands through electrostatic doping.

cond-mat.mes-hall↗

arXiv1998

Atomic resolution STM imaging of a twisted single-wall carbon nanotube

We present atomically-resolved STM images of single-wall carbon nanotubes (SWNTs) embedded in a crystalline nanotube rope. Although they may be interpreted as of a chiral nanotube, the images are more consistently explained a an achiral armchair tube with a quenched twist distortion. The existence of quenched twists in SWNTs in ropes might explain the fact that both as-grown bulk nanotube material and individual ropes have insulator-like conductivity at low temperature.

cond-mat.mes-hall↗