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A. Tsukada

Publications and source records attributed to A. Tsukada.

At least 19 recordsLinked to original sources

Anomalously Sharp Superconducting Transitions in Overdoped $La_{2-x}Sr_{x}CuO_{4}$ Films

We present measurements of $ab$-plane resistivity $ρ_{ab}(T)$ and superfluid density [$\propto λ^{-2}$, $λ$ = magnetic penetration depth] in $La_{2-x}Sr_{x}CuO_{4}$ films. As Sr concentration $x$ exceeds about 0.22, the superconducting transition sharpens dramatically, becoming as narrow as 200 mK near the super-to-normal metal quantum critical point. At the same time, $ρ_{ab}(T)$, $λ^{-2}(T)$, and transition temperature $T_c$ decrease, and upward curvature develops in $λ^{-2}(T)$. Given the sharp transitions, we interpret these results in the context of a homogeneous d-wave superconducting state, with elastic scattering that is enhanced relative to underdoped LSCO due to weaker electron correlations. This interpretation conflicts with the viewpoint that the overdoped state is inhomogeneous due to phase separation into superconducting and normal metal regions.

cond-mat.supr-con

Superconductor-to-Metal Quantum Phase Transition in Overdoped $La_{2-x}Sr_xCuO_4$

We investigate $T_c$ and magnetic penetration depth $λ(T)$ near the superconductor-metal quantum phase transition in overdoped $La_{2-x}Sr_{x}CuO_{4}$ films. Both $T_c$ and superfluid density $n_s$, $\propto λ^{-2}$, decrease with overdoping. They obey the scaling relation $T_c \propto [λ^{-2}(0)]^α$ with $α\approx 1/2$. We discuss this result in the frameworks of disordered d-wave superconductors and of scaling near quantum critical points. Our result, and the linear scaling ($α\approx 1$) found for the more anisotropic $Tl_2Ba_2CuO_{6+δ}$, can both be understood in terms of quantum critical scaling, with different dimensionalities for fluctuations.

cond-mat.supr-con

Raman light scattering study and microstructural analysis of epitaxial films of the electron-doped superconductor La_{2-x}Ce_{x}CuO_{4}

We present a detailed temperature-dependent Raman light scattering study of optical phonons in molecular-beam-epitaxy-grown films of the electron-doped superconductor La_{2-x}Ce_{x}CuO_{4} close to optimal doping (x ~ 0.08, T_c = 29 K and x ~ 0.1, T_c = 27 K). The main focus of this work is a detailed characterization and microstructural analysis of the films. Based on micro-Raman spectroscopy in combination with x-ray diffraction, energy-dispersive x-ray analysis, and scanning electron microscopy, some of the observed phonon modes can be attributed to micron-sized inclusions of Cu_{2}O. In the slightly underdoped film (x ~ 0.08), both the Cu_{2}O modes and others that can be assigned to the La_{2-x}Ce_{x}CuO_{4} matrix show pronounced softening and narrowing upon cooling below T ~ T_c. Based on control measurements on commercial Cu_{2}O powders and on a comparison to prior Raman scattering studies of other high-temperature superconductors, we speculate that proximity effects at La_{2-x}Ce_{x}CuO_{4}/Cu_{2}O interfaces may be responsible for these anomalies. Experiments on the slightly overdoped La_{2-x}Ce_{x}CuO_{4} film (x ~ 0.1) did not reveal comparable phonon anomalies.

cond-mat.supr-con

Synthesis of infinite-layer LaNiO2 films by metal-organic deposition

We report the synthesis of infinite-layer LaNiO2 thin films by metal organic decomposition. Our work is aimed to synthesize perovskite-like oxides with 3d9 electronic configuration, which is common to high-Tc copper oxides. The 3d9 configuration is very rare in oxides other than cuprates. Ni1+ oxides, even though Ni1+ is an unusual oxidation state, may be one of very few candidates. One example of the Ni1+ phases is infinite-layer LaNiO2. The bulk synthesis of LaNiO2 is difficult, but we demonstrate in this article that the thin-film synthesis of LaNiO2 by metal organic decomposition is rather easy. This is due to the advantage of thin films with a large-surface-to-volume ratio, which makes oxygen diffusion prompt. Resistivity measurements indicate that LaNiO2 is essentially a metal but unfortunately with no trace of superconductivity yet.

cond-mat.supr-con

Superconductivity phase diagrams of electron doped cuprates R(2-x)CexCuO4 (R = La, Pr, Nd, Sm, and Eu)

The superconductivity phase diagrams of electron doped cuprates of the form R(2-x)CexCuO4 (with R= La, Pr, Nd, Sm, and Eu) have been determined for cerium compositions 0 < x < 0.36 in a consistent series of epitaxial thin films grown by reactive molecular beam epitaxy (MBE). The use of epitaxial thin films allows the growth of materials away from thermodynamical equilibrium expanding the accessible phase space beyond the availability of bulk material. The superconducting phase space systematically increases with the rare earth ionic size. The doping concentration where the maximal transition temperature occurs in La(2-x)CexCuO4 is considerably shifted to lower doping (x ~ 0.09) compared to La(2-x)SrxCuO4 (x ~ 0.15). At the same time, the width of the superconducting region is broadened.

cond-mat.supr-con

Superconductivity in undoped T'-RE2CuO4 with Tc over 30 K

In this article, we report the superconductivity in T'-RE2CuO4 (RE = Pr, Nd, Sm, Eu, and Gd), which have been for a long time believed as a Mott insulator. Our discovery was achieved by using metal-organic decomposition (MOD), an inexpensive and easy-to-implement thin-film process. The keys to prepare the superconducting films are firing with low partial-pressure of oxygen and reduction at low temperatures. The highest Tc of undoped T'-RE2CuO4 is over 30 K, substantially higher than "electron-doped" analogs. Remarkably, Gd2CuO4, even the derivatives of which have not shown superconductivity so far, gets superconducting with Tconset as high as 20 K. The implication of our discovery is briefly discussed.

cond-mat.supr-con

Andreev bound states at a cuprate grain boundary junction: A lower bound for the upper critical field

We investigate in-plane quasiparticle tunneling across thin film grain boundary junctions (GBJs) of the electron-doped cuprate La$_{2-x}$Ce$_{x}$CuO$_4$ in magnetic fields up to $B=16 $T, perpendicular to the CuO$_2$ layers. The differential conductance in the superconducting state shows a zero bias conductance peak (ZBCP) due to zero energy surface Andreev bound states. With increasing temperature $T$, the ZBCP vanishes at the critical temperature $T_c\approx29 $K if B=0, and at $T=12 $K for B=16 T. As the ZBCP is related to the macroscopic phase coherence of the superconducting state, we argue that the disappearance of the ZBCP at a field $B_{ZBCP}(T)$ must occur below the upper critical field $B_{c2}(T)$ of the superconductor. We find $B_{ZBCP}(0) \approx 25 $T which is at least a factor of 2.5 higher than previous estimates of $B_{c2}(0)$.

cond-mat.supr-con

Persistent Supercurrent Atom Chip

Rubidium 87 atoms are trapped in an Ioffe-Pritchard potential generated with a persistent supercurrent that flows in a loop circuit patterned on a sapphire surface. The superconducting circuit is a closed loop made of 100 micro meter wide MBE-grown MgB2 stripe carrying a supercurrent of 2.5 A. To control the supercurrent in the stripe, an on-chip thermal switch operated by a focused argon-ion laser is developed. The switch operates as an on/off switch of the supercurrent, or as a device to set the current to a specific value with the aid of an external magnetic field. The current can be set even without an external source if the change is in decreasing direction.

cond-mat.supr-con

Charge transfer gap for T'-RE2CuO4 and T-La2CuO4 as estimated from Madelung potential calculations

T'-RE2CuO4 (RE: rare-earth element), after appropriate "reduction", has fairly high conductivity and also exhibits clear Fermi edge in photoemission spectroscopy. To clarify the origin of conductivity in the T' mother compounds, we evaluated the unscreened charge-transfer gap for T'-RE2CuO4 and T-La2CuO4. The value of charge-transfer gap for T'-compounds almost linearly decreases with increasing the ionic radius of RE from 12.24 eV for T'-Tm2CuO4 to 9.90 eV for T'-La2CuO4. The results qualitatively explain metallic conductivity in T'-RE2CuO4 for large RE.

cond-mat.supr-con

Doping of Ce in T-La2CuO4: Rigorous test for electron-hole symmetry for high-Tc superconductivity

We report that Ce doping was achieved in La2CuO4 with the K2NiF4 (T) structure for the first time by molecular beam epitaxy. A synthesis temperature of as low as ~ 630C and an appropriate substrate choice, i.e., (001)LaSrGaO4 (a \~ 3.843 A), enebled us to incorporate Ce into K2NiF4 lattice and to obtain Ce-doped T-La2-xCexCuO4 up to x ~ 0.06. The doping of Ce makes T-La2CuO4 more insulating, which is in sharp contrast to Sr (or Ba) doping in T-La2CuO4, which make the compound metallic and superconducting. The observed smooth increase in resistivity from the hole-doped side (T-La2-xSrxCuO4) to the electron-doped side (T-La2-xCexCuO4) indicates that the electron-hole symmetry is broken in the T-phase materials.

cond-mat.supr-con

Ce doping in T-La2CuO4 films: Broken electron-hole symmetry for high-Tc superconductivity

We attempted Ce doping in La2CuO4 with the K2NiF4 (T) structure by molecular beam epitaxy. At low growth temperature and with an appropriate substrate choice, we found that Ce can be incorporated into the K2NiF4 lattice up to x ~ 0.06, which had not yet been realized in bulk synthesis. The doping of Ce makes T-La2-xCexCuO4 more insulating, which is in sharp contrast to Ce doping in La2CuO4 with the Nd2CuO4 structure, which makes the compounds superconducting. The observed smooth increase in resistivity from hole-doped side (T-La2-xSrxCuO4) to electron-doped side (T-La2-xCexCuO4) indicates that electron-hole symmetry is broken in the T-phase materials.

cond-mat.supr-con

Role of impurity oxygen in superconductivity of "non-doped" T'-(La,RE)2CuO4

We have systematically investigated the effect of oxygen nonstoichiometry in a nominally undoped superconductor T'-(La,Y)2CuO4+y. In the experiments, the reduction condition was changed after the sample growth by MBE. The superconductivity is very sensitive to the reduction condition. With systematically increasingly reduced atmospheres, resistivity shows a continuous drop and no discontinuity is observed even until the appearance of superconductivity. The absence of the highly insulating state expected for Mott insulators around y ~ 0 suggests that T'-(La,Y)2CuO4 has intrinsic carriers. The role of residual apical oxygen, which is detrimental to superconductivity, is also discussed based on the resistivity-temperature characteristics in insufficiently reduced samples.

cond-mat.supr-con

Origin of superconducting carriers in "non-doped" T'- (La,RE)2CuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y) prepared by molecular beam epitaxy

We have performed a systematic investigation of the variations of the lattice constants with substituent rare-earth element concentration x in the nominally undoped superconductors T'-(La3+)2-x(RE3+)xCuO4 (RE = Sm, Eu, Gd, Tb, Lu, and Y), which we have recently discovered using MBE. The results show both the in-plane and out-of-plane lattice constants (a0 and c0) linearly decrease with x, whose extrapolation to x = 2 agrees well with the reported a0 and c0 values for each T'-RE2CuO4. This behavior is what one would expect simply from the ionic size difference between La3+ and RE3+. The absence of the Cu-O bond stretching due to electron-doping, which is commonly observed in electron-doped T' and infinite-layer superconductors, implies that electron doping via oxygen deficiencies is, at least, not a main source of charge carriers.

cond-mat.supr-con

New class of T-prime-structure cuprate superconductors

High-temperature superconductivity has been discovered in La2-xBaxCuO4 [1], a compound that derives from the undoped La2CuO4 crystallizing in the perovskite T-structure. In this structure oxygen octahedra surround the copper ions. It is common knowledge that charge carriers induced by doping in such an undoped antiferromagnetic Mott-insulator lead to high-temperature superconductivity [2- 4]. The undoped material La2CuO4 is also the basis of the electron-doped cuprate superconductors [5] of the form La2-xCexCuO4+y [6,7] which however crystallize in the so called T-prime-structure, i.e. without apical oxygen above or below the copper ions of the CuO2-plane. It is well known that for La2-xCexCuO4+y the undoped T-prime-structure parent compound cannot be prepared due to the structural phase transition back into the T-structure occuring around x ~ 0.05. Here, we report that if La is substituted by RE = Y, Lu, Sm, Eu, Gd, or Tb, which have smaller ionic radii but have the same valence as La, nominally undoped La2-xRExCuO4 can be synthesized by molecular beam epitaxy in the T-prime-structure. The second important result is that all these new T-prime-compounds are superconductors with fairly high critical temperatures up to 21 K. For this new class of cuprates La2-xRExCuO4, which forms the T-prime-parent compounds of the La-based electron doped cuprates, we have not been able to obtain the Mott-insulating ground state for small x before the structural phase transition into the T-structure takes place.

cond-mat.supr-con

Observation of Andreev bound states in bicrystal grain-boundary Josephson junctions of the electron doped superconductor LaCeCuO

We observe a zero-bias conductance peak (ZBCP) in the ab-plane quasiparticle tunneling spectra of thin film grain-boundary Josephson junctions made of the electron doped cuprate superconductor LaCeCuO. An applied magnetic field reduces the spectral weight around zero energy and shifts it non-linearly to higher energies consistent with a Doppler shift of the Andreev bound states (ABS) energy. For all magnetic fields the ZBCP appears simultaneously with the onset of superconductivity. These observations strongly suggest that the ZBCP results from the formation of ABS at the junction interfaces, and, consequently, that there is a sign change in the symmetry of the superconducting order parameter of this compound consistent with a d-wave symmetry.

cond-mat.supr-con

New superconduting cuprates with no effective doping: T'-(La3+)2-x(RE3+)xCuO4

We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our discovery are (1) the preparation of high-crystalline-quality La-based T' films by low-temperature (~ 650C) thin film processes, and (2) more thorough removal of impurity oxygen at the apical site, which is achieved by the larger in-plane lattice constant (a0) of T'-La2-xRExCuO4 than other T'-Ln2CuO4 (Ln = Pr, Nd, Sm, Eu, Gd) with the aid of large surface-to-volume ratio of thin films.

cond-mat.supr-con

New superconducting T'-(La3+)2-x(RE3+)xCuO4 with isovalent doping (RE = Sm, Eu, Tb, Lu, and Y)

We report the synthesis of new superconducting cuprates T'-La2-xRExCuO4 (RE = Sm, Eu, Tb, Lu, and Y) using molecular beam epitaxy. The new superconductors have no effective dopant, at least nominally. The substitution of isovalent RE for La was essentially performed to stabilize the T' phase of La2CuO4 instead of the T phase. The maximum Tconset is ~ 25 K and Tczero is ~ 21 K. The keys to our discovery are (1) the preparation of high-crystalline-quality La-based T' films by low-temperature (~650C) thin film processes, and (2) more thorough removal of impurity oxygen at the apical site, which is achieved by the larger in-plane lattice constant (a0) of T'-La2-xRExCuO4 than other T'-Ln2CuO4 (Ln = Pr, Nd, Sm, Eu, Gd) with the aid of large surface-to-volume ratio of thin films. The photoemission spectra suggest that the end member compounds of the T' system may not be a Mott insulator.

cond-mat.supr-con

Doping dependence of the gap anisotropy in LCCO studied by millimeter-wave spectroscopy

We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant changes on electron doping. It shows quadratic temperature dependence in underdoped samples, but increases almost exponentially at optimal doping. Significant changes in the gap anisotropy (or even in the gap symmetry) may account for this transition.

cond-mat.supr-con