arXiv subjects

A. Tulapurkar

Publications and source records attributed to A. Tulapurkar.

7 recordsLinked to original sources

arXiv2016

Coherent microwave generation by spintronic feedback oscillator

The transfer of spin angular momentum to a nanomagnet from a spin polarized current provides an efficient means of controlling the magnetization direction in nanomagnets. A unique consequence of this spin torque is that the spontaneous oscillations of the magnetization can be induced by applying a combination of a dc bias current and a magnetic field. Here we experimentally demonstrate a different effect, which can drive a nanomagnet into spontaneous oscillations without the need of external spin torque injection. For the demonstration of this effect, we use a nano-pillar of magnetic tunnel junction (MTJ) powered by a dc current and connected to a coplanar waveguide (CPW) lying above the free layer of the MTJ. Any fluctuation of the free layer magnetization is converted into oscillating voltage via the tunneling magneto-resistance effect and is fed back into the MTJ by the CPW through inductive coupling. As a result of this feedback, the magnetization of the free layer can be driven into a continual precession. The combination of MTJ and CPW behaves similar to a laser system and outputs a stable rf power with quality factor exceeding 10,000.

cond-mat.mes-hall↗

arXiv2016

Planar Hall and Nernst effect in patterned ultrathin film of La0.7Sr0.3MnO3

We present the observation of a transverse thermopower, or Planar Nernst Effect, in patterned ultrathin film (8 nm) of La0.7Sr0.3MnO3 (LSMO) driven by heat current applied in-plane of the film and Planar Hall Effect (PHE) in the same LSMO ultrathin film with in-plane current of 100 microA is also investigated. Even for temperature difference of 5 K the Planar Nernst Effect in ultrathin film (8 nm) shows a coercivity of 3 Oe same as observed in Planar Hall Effect measurement and confirms the ferromagnetic nature of thin film. The angular dependence of transverse voltages shows four-fold sin{theta} cos{theta} dependence symmetry at 250 K, which is consistent with Planar Hall Effect measurement.

cond-mat.mes-hall↗

arXiv2015

Electric Field Controlled Magnetization and Charge-Ordering in Pr0.6Ca0.4MnO3

In this paper, we present the observation of the electric field control on the charge-ordering and metamagnetic transitions during the magnetization measurements in a single crystal of Pr0.6Ca0.4MnO3 (PCMO). We have demonstrated that the complete melting of charge ordering can be realized in a single crystal of PCMO by applying a voltage as small as 2.5 V, which otherwise needs magnetic fields in excess of 11 T. The maximum change in magnetization with applied voltage occurs across the charge-ordering transition temperature (TCO = 235 K). Even though the electric field does not seem to affect the magnetic ordering, we see a clear evidence at low temperatures for the occurrence of the metamagnetic transitions at higher fields with the application of electric field.

cond-mat.mes-hall↗

arXiv2015

Electric field controlled magnetization and transport properties of La0.7Ca0.3MnO3 ultrathin film

We have investigated the effect of electric field control on the magnetization and the transport properties in La0.7Ca0.3MnO3 (LCMO) ultrathin film (~10 nm) by using it as the semiconductor channel material of a prototypical field effect device and SiO2 as dielectric gate. A large electroresistance (ER) of ~78% at Vg = -8 V is found in LCMO at 200 K. The direct magnetization measurements confirm the formation of a large ferromagnetic phase with the increase in the applied gate voltage at 200 K.

cond-mat.mes-hall↗

arXiv2014

Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films

We present the observation of strain induced sign reversal of anisotropic magnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm) deposited on STO (001) substrate (STO). We have also observed unusually large AMR in LCMO/STO thin films with thickness of 6 nm below but close to its Curie temperature (TC) which decrease as the film thickness increases. The sign reversal of AMR (with a maximum value of - 6) with magnetic field or temperature for the 4 nm thin film may be attributed to the increase in tensile strain in the plane of the thin film which in turn facilitates the rotation of the magnetization easy axis.

cond-mat.mes-hall↗

arXiv2007

Rectification of radio frequency current in ferromagnetic nanowire

We report the rectification of a constant wave radio frequency (RF) current by using a single-layer magnetic nanowire; a direct-current voltage is resonantly generated when the RF current flows through the nanowire. The mechanism of the rectification is discussed in terms of the spin torque diode effect reported for magnetic tunnel junction devices and the rectification is shown to be direct attributable to resonant spin wave excitation by the RF current.

cond-mat.mtrl-sci↗

arXiv2001

Comparison of History Effects in Magnetization in Weakly pinned Crystals of high-$T_c$ and low-T$_c$ Superconductors

A comparison of the history effects in weakly pinned single crystals of a high $T_c$ YBa$_2$Cu$_3$O$_{7 - δ}$ (for H $\parallel$ c) and a low $T_c$ Ca$_3$Rh$_4$Sn$_{13}$, which show anomalous variations in critical current density $J_c(H)$ are presented via tracings of the minor magnetization hysteresis loops using a vibrating sample magnetometer. The sample histories focussed are, (i) the field cooled (FC), (ii) the zero field cooled (ZFC) and (iii) an isothermal reversal of field from the normal state. An understanding of the results in terms of the modulation in the plastic deformation of the elastic vortex solid and supercooling across order-disorder transition is sought.

cond-mat.supr-con↗