arXiv subjects

A. V. Bubis

Publications and source records attributed to A. V. Bubis.

6 recordsLinked to original sources

arXiv2022

Heat-mode excitation in a proximity superconductor

Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much harder to control. This noticeable gap in the experimental studies of mesoscopic non-equilibrium superconductivity can be filled by going beyond the conventional DC transport measurements and exploiting spontaneous current fluctuations. Here, we perform such an experiment and investigate the transport of heat in an open hybrid device based on a superconductor proximitized InAs nanowire. Using shot noise measurements, we investigate sub-gap Andreev heat guiding along the superconducting interface and fully characterize it in terms of the thermal conductance on the order of $G_\mathrm{th}\sim e^2/h$, tunable by a back gate voltage. Understanding of the heat-mode also uncovers its implicit signatures in the non-local charge transport. Our experiments open a direct pathway to probe generic charge-neutral excitations in superconducting hybrids.

cond-mat.mes-hall↗

arXiv2021

Thermal conductance and non-equilibrium superconductivity in a diffusive NSN wire probed by shot noise

We investigate diffusive nanowire-based structures with two normal terminals on the sides and a central superconducting island in the middle, which is either grounded or floating. Using a semiclassical calculation we demonstrate that both device layouts permit a quantitative measurement of the energy-dependent sub-gap thermal conductance $G_\mathrm{th}$ from the spectral density of the current noise. In the floating case this goal is achieved without the need to contact the superconductor provided the device is asymmetric, that may be attractive from the experimental point of view. In addition, we observe that the shot noise in the floating case is sensitive to a well-known effect of non-equilibrium suppression and bistability of the superconducting gap. Our calculations are directly applicable to the multi-mode case and can serve as a starting point to understand the shot noise response in open one dimensional Majorana device.

cond-mat.mes-hall↗

arXiv2021

Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices

Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot noise measurement delivers a missing puzzle piece in NSN InAs nanowire-based devices. We demonstrate that in a trivial superconducting phase quasiparticle response is practically charge-neutral, dominated by the heat transport component with a thermal conductance being on the order of conductance quantum. This is qualitatively explained by numerous Andreev reflections of a diffusing quasiparticle, that makes its charge completely uncertain. Consistently, strong fluctuations and sign reversal are observed in the sub-gap nonlocal conductance, including occasional Andreev rectification signals. Our results prove conductance and noise as complementary measurements to characterize quasiparticle transport in superconducting proximity devices.

cond-mat.mes-hall↗

arXiv2021

Localization of the Helical Edge States in the Absense of External Magnetic Field

Theoretically, the helical edge states of two-dimensional topological insulators are protected from coherent backscattering due to nonmagnetic disorder provided electron interactions are not too strong. Experimentally, the edges typically do not demonstrate the systematic and robust quantization, at the same time little is known about the sub-Kelvin temperature behavior. Here, we report the surprising localization of the edge states in an 8 nm HgTe quantum well in zero magnetic field at millikelvin temperatures. Additionally, the magnetoresistance data at 0.5 K for the edges few micrometers long suggests the field-dependent localization length $l_B\propto B^{-α}$, with $α$ ranging approximately from $1.6$ to $2.8$ at fields $B\lesssim0.1\,\text{T}$ and $α\approx1.1$ at higher fields up to $0.5\,\text{T}$. In the frame of disordered interacting edge, these values of $α$ correspond to the Luttinger liquid parameters $K\approx 0.9-1.1$ and $K\approx 0.6$, respectively. We discuss possible scenarios which could result in the zero magnetic field localization.

cond-mat.mes-hall↗

arXiv2018

Noise insights into electronic transport

Typical experimental measurement is set up as a study of the system's response to a stationary external excitation. This approach considers any random fluctuation of the signal as spurious contribution which is to be eliminated via time-averaging or, equivalently, bandwidth reduction. Beyond that lies a conceptually different paradigm -- the measurement of the system's spontaneous fluctuations. The goal of this overview article is to demonstrate how current noise measurements bring insight into hidden features of electronic transport in various mesoscopic conductors, ranging from 2D topological insulators to individual carbon nanotubes.

cond-mat.mes-hall↗

arXiv2017

Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions

We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($Δ_N$) close to the Al gap ($Δ_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $Δ_N\approxΔ_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $Δ_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface.

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