arXiv subjects

A. V. Bugaev

Publications and source records attributed to A. V. Bugaev.

2 recordsLinked to original sources

arXiv2025

Structural and Thermal Stability of B4C/Ru Multilayers with Carbon Barrier Layers

The chemical interaction between Mo and Ru layers in multilayer structures depending on the thickness ratio ($\Gamma$) was carried out using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and X-ray reflectometry (XRR). The results showed significant interaction of materials inside multilayer structures with the formation of ruthenium borides, with an increase in the B4C layer thickness (a decrease in the $\Gamma$ parameter) leading to the formation of ruthenium borides of different stoichiometry. The introduction of a carbon barrier layer at the Ru-on-B4C interface resulted in significant suppression of ruthenium boride formation. The thermal stability of the B4C/Ru system was also studied upon annealing at 400$^{\circ}$C for 1 hour before and after the introduction of the carbon barrier layer. It was shown that the introduction of a carbon barrier layer at the Ru-on-B4C interface increases the thermal stability of the system, which makes this system more suitable for use in optical systems exposed to long-term radiation. The obtained results are important for the development of highly efficient multilayer mirrors used in EUV lithography and X-ray optics.

cond-mat.mtrl-sci↗

arXiv2025

Influence of Silicon Interlayers on Transition Layer Formation in Ti/Ni Multilayer Structures of Different Thicknesses

This study presents a comprehensive investigation of chemical, structural, and magnetic properties of Ti/Ni multilayer systems with period thicknesses of 4 nm and 10 nm. Particular attention was paid to the characterization of the transition layers at Ni-Ti interfaces and the influence of thin silicon barrier layers on their formation. A combination of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), X-ray reflectometry (XRR), and SQUID magnetometry was employed for analysis. Extended transition layers up to 1.2 nm in thickness were identified at the Ni-Ti interfaces, primarily composed of the intermetallic Ni3Ti phase. The insertion of ultra-thin silicon buffer layers at the interfaces significantly suppressed the formation of intermetallic compounds, most likely due to the formation of titanium silicides. Additionally, it was observed that the use of Si layer on the sample surface leads to the formation of silicon oxide after exposure to the ambient environment, which acts as a passivation layer and inhibits oxidation of Ni and Ti layers within the topmost period of the multilayer structure.

cond-mat.mtrl-sci↗