arXiv subjects

A. V. Butenko

Publications and source records attributed to A. V. Butenko.

12 recordsLinked to original sources

arXiv2022

Status and initial physics performance studies of the MPD experiment at NICA

The Nuclotron-base Ion Collider fAcility (NICA) is under construction at the Joint Institute for Nuclear Research (JINR), with commissioning of the facility expected in late 2022. The Multi-Purpose Detector (MPD) has been designed to operate at NICA and its components are currently in production. The detector is expected to be ready for data taking with the first beams from NICA. This document provides an overview of the landscape of the investigation of the QCD phase diagram in the region of maximum baryonic density, where NICA and MPD will be able to provide significant and unique input. It also provides a detailed description of the MPD set-up, including its various subsystems as well as its support and computing infrastructures. Selected performance studies for particular physics measurements at MPD are presented and discussed in the context of existing data and theoretical expectations.

physics.ins-det↗

arXiv2017

First results on the measurements of the proton beam polarization at internal target at Nuclotron

The spin program at NICA using SPD and MPD requires high intensity polarized proton beam with high value of the beam polarization. First results on the measurements of the proton beam polarization performed at internal target at Nuclotron are reported. The polarization of the proton beam provided by new source of polarized ions has been measured at 500 MeV using quasielastic proton-proton scattering and DSS setup at internal target. The obtained value of the vertical polarization of ~35 % is consistent with the calculations taking into account the current magnetic optics of the Nuclotron injection line.

physics.ins-det↗

arXiv2015

Hopping magnetoresistance in ion irradiated monolayer graphene

Magnetoresistance (MR) of ion irradiated monolayer graphene samples with variable-range hopping (VRH) mechanism of conductivity was measured at temperatures down to $T = 1.8$ K in magnetic fields up to $B = 8$ T. It was observed that in perpendicular magnetic fields, hopping resistivity $R$ decreases, which corresponds to negative MR (NMR), while parallel magnetic field results in positive MR (PMR) at low temperatures. NMR is explained on the basis of the "orbital" model in which perpendicular magnetic field suppresses the destructive interference of many paths through the intermediate sites in the total probability of the long-distance tunneling in the VRH regime. At low fields, a quadratic dependence ($|ΔR/R|\sim B^2$) of NMR is observed, while at $B > B^*$, the quadratic dependence is replaced by the linear one. It was found that all NMR curves for different samples and different temperatures could be merged into common dependence when plotted as a function of $B/B^*$. It is shown that $B^*\sim T^{1/2}$ in agreement with predictions of the "orbital" model. The obtained values of $B^*$ allowed also to estimate the localization radius $ξ$ of charge carriers for samples with different degree of disorder. PMR in parallel magnetic fields is explained by suppression of hopping transitions via double occupied states due to alignment of electron spins.

cond-mat.mes-hall↗

arXiv2015

Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation

Gradual localization of charge carriers was studied in a series of micro-size samples of monolayer graphene fabricated on the common large scale film and irradiated by different doses of C$^+$ ions with energy 35 keV. Measurements of the temperature dependence of conductivity and magnetoresistance in fields up to 4 T showed that at low disorder, the samples are in the regime of weak localization and antilocalization. Further increase of disorder leads to strong localization regime, when conductivity is described by the variable-range-hopping (VRH) mechanism. A crossover from the Mott regime to the Efros-Shklovskii regime of VRH is observed with decreasing temperature. Theoretical analysis of conductivity in both regimes showed a remarkably good agreement with experimental data.

cond-mat.mes-hall↗

arXiv2015

Raman scattering and electrical resistance of highly disordered graphene

Raman scattering (RS) spectra and current-voltage characteristics at room temperature were measured in six series of small samples fabricated by means of electron-beam lithography on the surface of a large size (5x5 mm) industrial monolayer graphene film. Samples were irradiated by different doses of C${}^+$ ion beam up to $10^{15}$ cm${}^{-2}$. It was observed that at the utmost degree of disorder, the Raman spectra lines disappear which is accompanied by the exponential increase of resistance and change in the current-voltage characteristics.These effects are explained by suggestion that highly disordered graphene film ceases to be a continuous and splits into separate fragments. The relationship between structure (intensity of RS lines) and sample resistance is defined. It is shown that the maximal resistance of the continuous film is of order of reciprocal value of the minimal graphene conductivity $πh/4e^2\approx 20$ kOhm.

cond-mat.mes-hall↗

arXiv2009

Thermal Wave Induced Edge Electrical Field of Pyroelectric: Spatial Pattern Mapping and Effect of Ambient Conditions

We have recently analyzed theoretically the main characteristics of the edge depolarizing electric field (EDEF), in the vicinity of a non-polar face of a pyroelectric. In this work we measured and characterized the EDEF, excited by a harmonical thermal wave. We present here experimental results obtained on a pyroelectric crystal LiTaO3, confirming our theoretical predictions. We present the theoretical analysis and description of the thermal wave and the induced harmonically varying EDEF. The calculations assume an equivalent circuit of a pyroelectric capacitive current source. The measured magnitude of the EDEF and its spatial variation agree well with the theoretical model. The effect of the air pressure at the pyroelectric/air interface, on the EDEF, was determined in the interval 10^3 - 10^-6 torr. We found that EDEF increases significantly with decreasing air pressure, presumably due to diminishing of adsorption screening at the polar faces. Teflon plates, covering the polar faces, prevent accumulation of screening charged particles, resulting in a drastic increase of EDEF.

cond-mat.other↗

arXiv2009

Enhancement of Voltage, Ion current and Neutron Yield in Pyroelectric Accelerators

Utilization of current pyroelectric accelerators (PEA) is limited due to low ion current and neutron generation yields. Current design, using pyroelectrics (PE) with high pyrocoefficient (p), having high dielectric constant (e), limits the figure-of-merit. We present detailed analysis of a modified structure of PEA, providing the highest attainable voltage and ion current. In the paired configuration, using metal plates covering the polar faces, with grounded back plates, the accelerating voltage and electric field are proportional to p and do not depend on e. Therefore, in the modified structure, PE with high p significantly increases the ion and neutron yields.

cond-mat.other↗

arXiv2008

Experimental and Theoretical Investigation of the Barrier Pyroelectric Effect in a Quantum Paraelectric Semiconductor

We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High quality PbTe p-n junctions have been prepared specifically for this experiment. The pyroelectric effect was excited by a continuous CO2 laser beam, modulated by a mechanical chopper. The shape and amplitude of the periodic and single-pulse pyroelectric signals were studied as a function of temperature (10K-130K), reverse bias voltage (up to -500 mV) and chopping frequency (4Hz-2000Hz). The pyroelectric coefficient is about 10^(-3) microC/cm2K in the temperature region 40 - 80 K. The developed theoretical model quantitatively describes all the experimental features of the observed pyroelectric effect. The time evolution of the temperature within the p-n junction was reconstructed.

cond-mat.other↗

arXiv2007

Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study

We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage and chopper frequency. The measured pyroelectric coefficient is about 10^(-3) microC/cm2K in the region of 40-80 K. The theoretical model describes quantitatively all experimental features. The time evolution of the temperature inside the junction region was reconstructed.

cond-mat.other↗

arXiv2007

Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation

We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of these PbTe diodes. Capacitance-voltage and current-voltage characteristics have been measured. The measurements were carried out over a temperature range from ~ 10 K to ~ 180 K. The latter was the highest temperature, where the diode still demonstrated rectifying properties. This maximum operating temperature is higher than any of the earlier reported results. The saturation current density, J0, in both diode types, was ~ 10^-5 A/cm2 at 80 K, while at 180 K J0 ~ 10^-1 A/cm2 in TDJ and ~ 1 A/cm2 in both ion-implanted junctions. At 80 K the reverse current started to increase markedly at a bias of ~ 400 mV for TDJ, and at ~550 mV for IJ. The ideality factor n was about 1.5-2 for both diode types at 80 K. The analysis of the C-V plots shows that the junctions in both diode types are linearly graded. The analysis of the C-V plots allows also determining the height of the junction barrier, the concentrations and the concentration gradient of the impurities, and the temperature dependence of the static dielectric constant. The zero-bias-resistance x area products (R0Ae) at 80 K are: 850 OHMcm2 for TDJ, 250 OHMcm2 for In-IJ, and ~ 80 OHMcm2 for Zn-IJ, while at 180 K R0Ae ~ 0.38 OHMcm2 for TDJ, and ~ 0.1 OHMcm2 for IJ. The estimated detectivity is: D* ~ 10^10 cmHz^(1/2)/W up to T=140 K, determined mainly by background radiation, while at T=180 K, D* decreases to 108-107 cmHz^(1/2)/W, and is determined by the Johnson noise.

cond-mat.other↗

arXiv2006

Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate

Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method. The SrTiO3 substrate serves as the dielectric layer in the Gate-Dielectric-PbTe structure. Due to the large dielectric constant of SrTiO3, particularly at low temperatures, the electric displacement D in the film reaches the high value of about 10^8 V/cm, and the EFE introduced charge into the PbTe film amounts to ~ 8 microC/cm2. The high D permits to measure the EFE resistance and Hall constant over a wide region of D, revealing the characteristic features of their D-dependence. An appropriate theoretical model has been formulated, showing that, for such films, one can measure the dependence of the Fermi level on D. In fact, we demonstrate that shifting the Fermi level across the gap by varying D, the density-of-states of the in-gape states can be mapped out. Our results show, that the PbTe layers studied, possess a mobility gap exceeding the gap of bulk PbTe.

cond-mat.other↗

arXiv2001

The Physics of Electric Field Effect Thermoelectric Devices

We describe here a novel approach to the subject of thermoelectric devices. The current best thermoelectrics are based on heavily doped semiconductors or semimetal alloys. We show that utilization of electric field effect or ferroelectric field effect, not only provides a new route to this problem, bypassing the drawbacks of conventional doping, but also offers significantly improved thermoelectric characteristics. We present here model calculation of the thermoelectric figure of merit in thin films of Bi and PbTe, and also discuss several realistic device designs.

cond-mat↗