arXiv subjects

A. V. Fedorov

Publications and source records attributed to A. V. Fedorov.

At least 37 records · Page 2Linked to original sources

arXiv2013

Chemically gated electronic structure of a superconducting doped topological insulator system

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu$_x$Bi$_2$Se$_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier density and surface-normal electrical field strength near the crystal surface are estimated to consider the effect of chemical surface gating on atypical superconducting properties associated with topological insulator order, such as the dynamics of theoretically predicted Majorana Fermion vortices.

cond-mat.supr-con↗

arXiv2013

Persistent Coherence and Spin-Polarization of Topological Surface States on Topological Insulators

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should remain coherent and significantly spin polarized at ambient temperatures. Here, we studied the coherence and spin-structure of the topological states on the surface of a model topological insulator, Bi2Se3, at elevated temperatures in spin and angle-resolved photoemission spectroscopy. We found an extremely weak broadening and essentially no decay of spin polarization of the topological surface state up to room temperature. Our results demonstrate that the topological states on surfaces of topological insulators could serve as a basis for room temperature electronic devices.

cond-mat.str-el↗

arXiv2013

Topological insulator in a Bi-Bi$_2$Se$_3$ infinitely adaptive superlattice phase

We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ layers and Bi$_2$Se$_3$ layers; the inclusion of S allows the growth of large crystals, with the formula Bi$_4$Se$_{2.6}$S$_{0.4}$. The crystals cleave along the interfaces between the Bi$_2$ and Bi$_2$Se$_3$ layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the $Γ$ point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator.

cond-mat.mtrl-sci↗

arXiv2013

Measurement of an Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi$_2$Se$_3$ Using Angle-Resolved Photoemission Spectroscopy

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi$_2$Se$_3$, by high resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room temperature electronic devices.

cond-mat.str-el↗

arXiv2012

Electron behavior in topological insulator based P-N overlayer interfaces

Topological insulators (TIs) are novel materials that manifest spin-polarized Dirac states on their surfaces or at interfaces made with conventional matter. We have measured the electron kinetics of bulk doped TI Bi$_2$Se$_3$ with angle resolved photoemission spectroscopy while depositing cathodic and anodic adatoms on the TI surfaces to add charge carriers of the opposite sign from bulk dopants. These P-N overlayer interfaces create Dirac point transport regimes and larger interface potentials than previous N-N type surface deposition studies, revealing unconventional Rashba-like and surface-bulk electron interactions, and an unusual characteristic distribution of spectral weight near the Dirac point in TI Dirac point interfaces. The electronic structures of P-N doped topological interfaces observed in these experiments are an important step towards the understanding of solid interfaces with topological materials.

cond-mat.mtrl-sci↗

arXiv2012

Spin Configuration and Scattering Rates on the Heavily Electron-doped Surface of Topological Insulator Bi$_2$Se$_3$

Heavily electron-doped surfaces of Bi$_2$Se$_3$ have been studied by spin and angle resolved photoemission spectroscopy. Upon doping, electrons occupy a series of {\bf k}-split pairs of states above the topological surface state. The {\bf k}-splitting originates from the large spin-orbit coupling and results in a Rashba-type behavior, unequivocally demonstrated here via the spin analysis. The spin helicities of the lowest laying Rashba doublet and the adjacent topological surface state alternate in a left-right-left sequence. This spin configuration sets constraints to inter-band scattering channels opened by electron doping. A detailed analysis of the scattering rates suggests that intra-band scattering dominates with the largest effect coming from warping of the Fermi surface.

cond-mat.str-el↗

arXiv2012

Reply to Comment by Calandra et al on "Electronic Structure of Superconducting KC$_8$ and Nonsuperconducting LiC$_6$ Graphite Intercalation Compounds: Evidence for a Graphene-Sheet-Driven Superconducting State"

In their comment Calandra \textit{et al} \cite{Calandra}, assert two points: (1) the estimate of charge transfer from Li to graphene layers in LiC$_6$ in our letter \cite{Pan2011c} is incorrect because of the three dimensional (3D) character of the electronic structure in bulk LiC$_6$; (2) our main claim that the superconductivity in graphite intercalation compounds (GICs) is graphene-sheet-driven is therefore invalid.

cond-mat.supr-con↗

arXiv2011

Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization

We performed high-resolution spin- and angle-resolved photoemission spectroscopy studies of the electronic structure and the spin texture on the surface of Bi$_2$Se$_3$, a model topological insulator. By tuning the photon energy, we found that the topological surface state is well separated from the bulk states in the vicinity of $k_z=Z$ plane of the bulk Brillouin zone. The spin-resolved measurements in that region indicate a very high degree of spin polarization of the surface state, $\sim 0.75$, much higher than previously reported. Our results demonstrate that the topological surface state on Bi$_2$Se$_3$ is highly spin polarized and that the dominant factors limiting the polarization are mainly extrinsic.

cond-mat.str-el↗

arXiv2011

Electronic structure of superconducting KC$_8$ and non-superconducting LiC$_6$ graphite intercalation compounds: Evidence for a graphene-sheet-driven superconducting state

We have performed photoemission studies of the electronic structure in LiC$_6$ and KC$_8$, a non-superconducting and a superconducting graphite intercalation compound, respectively. We have found that the charge transfer from the intercalant layers to graphene layers is larger in KC$_8$ than in LiC$_6$, opposite of what might be expected from their chemical composition. We have also measured the strength of the electron-phonon interaction on the graphene-derived Fermi surface to carbon derived phonons in both materials and found that it follows a universal trend where the coupling strength and superconductivity monotonically increase with the filling of graphene $π^{\ast}$ states. This correlation suggests that both graphene-derived electrons and graphene-derived phonons are crucial for superconductivity in graphite intercalation compounds.

cond-mat.supr-con↗

arXiv2010

A high-efficiency spin-resolved phototemission spectrometer combining time-of-flight spectroscopy with exchange-scattering polarimetry

We describe a spin-resolved electron spectrometer capable of uniquely efficient and high energy resolution measurements. Spin analysis is obtained through polarimetry based on low-energy exchange scattering from a ferromagnetic thin-film target. This approach can achieve a similar analyzing power (Sherman function) as state-of-the-art Mott scattering polarimeters, but with as much as 100 times improved efficiency due to increased reflectivity. Performance is further enhanced by integrating the polarimeter into a time-of-flight (TOF) based energy analysis scheme with a precise and flexible electrostatic lens system. The parallel acquisition of a range of electron kinetic energies afforded by the TOF approach results in an order of magnitude (or more) increase in efficiency compared to hemispherical analyzers. The lens system additionally features a 90° bandpass filter, which by removing unwanted parts of the photoelectron distribution allows the TOF technique to be performed at low electron drift energy and high energy resolution within a wide range of experimental parameters. The spectrometer is ideally suited for high-resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES), and initial results are shown. The TOF approach makes the spectrometer especially ideal for time-resolved spin-ARPES experiments.

cond-mat.mtrl-sci↗

arXiv2010

Electron-Hole Asymmetry in Superconductivity of Pnictides Originated from the Observed Rigid Chemical Potential Shift

We have performed a systematic photoemission study of the chemical potential shift as a function of carrier doping in a pnictide system based on BaFe$_2$As$_2$. The experimentally determined chemical potential shift is consistent with the prediction of a rigid band shift picture by the renormalized first-principle band calculations. This leads to an electron-hole asymmetry (EHA) in the Fermi surface (FS) nesting condition due to different effective masses for different FS sheets, which can be calculated from the Lindhard function of susceptibility. This built-in EHA from the band structure, which matches well with observed asymmetric superconducting domes in the phase diagram, strongly supports FS near-nesting driven superconductivity in the iron pnictides.

cond-mat.supr-con↗

arXiv2010

First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime

Both the theoretical and experimental discovery of single-Dirac-cone topological-insulator-class was reported at arXiv:0812.2078 (2008) [Y. Xia et.al., Nature Physics 5, 398-402 (2009) http://www.nature.com/nphys/journal/v5/n6/full/nphys1294.html]. Here we report the first observation of Spin-Momentum Helical Locking and Spin-Vortex structures in Bi2Se3 and Bi2Te3, demonstrate the existence of Topological-Order at 300K and report a material realization of topological-transport-regime for helical Dirac fermions. Our results reveal a one-to-one spin-momentum locked Dirac structure in Bi2Se3 and Bi2Te3 that is nearly 100% spin-polarized, which exhibits a tunable topological fermion density in the vicinity of the Kramers' point and can be driven to the long-sought topological-transport-regime. The observed topological nodal Dirac ground state is found to be protected even up to room temperature (300 K). Our results pave the way for future transport based studies of topological insulators, and possible room temperature applications of protected spin-polarized edge channels we observe with spin-ARPES in spintronic technology. All of these new results are made possible due to the Spin-resolved-ARPES (Mott polarimetric) technique [http://www.nature.com/nature/journal/v460/n7259/full/nature08234.html ] .

cond-mat.mes-hall↗

arXiv2009

Non-monotonic Fermi surface evolution and its correlation with stripe ordering in bilayer manganites

In correlated electron systems such as cuprate superconductors and colossal magnetoresistive (CMR) oxides there is often a tendency for a nanoscale self-organization of electrons that can give rise to exotic properties and to extreme non-linear responses. The driving mechanisms for this self-organization are highly debated, especially in the CMR oxides in which two types of self-organized stripes of charge and orbital order coexist with each other. By utilizing angle-resolved photoemission spectroscopy measurements over a wide doping range, we show that one type of stripe is exclusively linked to long flat portions of nested Fermi surface, while the other type prefers to be commensurate with the real space lattice but also may be driven away from this by the Fermi surface. Complementarily, the Fermi surface also appears to be driven away from its non-interacting value at certain doping levels, giving rise to a host of unusual electronic properties.

cond-mat.str-el↗

arXiv2009

Dynamics of bi-stripes and a colossal metal-insulator transition in the bi-layer manganite La$_{2-2x}$Sr$_{1+2x}$Mn$_{2}$O$_{7}$ (x~0.59)

In correlated electron materials, electrons often self-organize and form a variety of patterns with potential ordering of charges, spins, and orbitals, which are believed to be closely connected to many novel properties of these materials including superconductivity, metal-insulator transitions, and the CMR effect. How these real-space patterns affect the conductivity and other properties of materials (which are usually described in momentum space) is one of the major challenges of modern condensed matter physics. Moreover, although the presence of static stripes is indisputable, the existence (and potential impacts) of fluctuating stripes in such compounds is a subject of great debate. Here we present the electronic excitations of La$_{2-2x}$Sr$_{1+2x}$Mn$_{2}$O$_{7}$ (x ~ 0.59) probed by angle-resolved photoemission (ARPES), from which we demonstrate that a novel type of ordering, termed bi-stripes, can exhibit either static or fluctuating order as a function of temperature. We found that the static bi-stripe order is especially damaging to electrical conductivity, completely localizing the electrons in the bi-stripe regions, while the fluctuating stripes can coexist with mobile carriers. This physics drives a novel phase transition with colossal conductivity changes as a function of temperature. Our finding suggests that quantum stripes can give rise to electronic properties significantly different from their static counterparts. Inducing transition between them can turn on remarkable electronic phenomena, enriching our understanding of correlated electron systems as well as opening a window for potential applications in electronic devices.

cond-mat.str-el↗

arXiv2009

Time-reversal-protected single-Dirac-cone topological-insulator states in Bi2Te3 and Sb2Te3: Topologically Spin-polarized Dirac fermions with pi Berry's Phase

We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 (first non-Bi topological insulator) and their derivatives belong to the Z2 (Time-Reversal-Protected, elastic backscattering suppressed) topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (about 150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z2 topological properties. We demonstrate that the dynamics of surface spin-only Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for exploring novel topological physics. We emphasize (theoretically and experimentally) that the Dirac node is well within the bulk-gap and not degenerate with the bulk valence band.

cond-mat.mes-hall↗

arXiv2009

Topological Control: Systematic control of topological insulator Dirac fermion density on the surface of Bi2Te3

Three dimensional (3D) topological insulators are quantum materials with a spin-orbit induced bulk insulating gap that exhibit quantum-Hall-like phenomena in the absence of applied magnetic fields. The proposed applications of topological insulators in device geometries rely on the ability to tune the chemical potential on their surfaces in the vicinity of the Dirac node. Here, we demonstrate a suite of surface control methods based on a combination of photo-doping and molecular-doping to systematically tune the Dirac fermion density on the topological (111) surface of Bi2Te3. Their efficacy is demonstrated via direct electronic structure topology measurements using high resolution angle-resolved photoemission spectroscopy (ARPES). These results open up new opportunities for probing topological behavior of Dirac electrons on the Bi2Te3 surface. At least one of the methods demonstrated here can be successfully applied to other topological insulators such as the Bi{1-x}Sb{x}, Sb2Te3 and Bi2Se3 which will be shown elsewhere. More importantly, our methods of topological surface state manipulation demonstrated here are highly suitable for future spectroscopic studies of topological phenomena which will complement the transport results gained from the traditional electrical gating techniques.

cond-mat.mes-hall↗

arXiv2009

First observation of spin-helical Dirac fermions and topological phases in undoped and doped Bi2Te3 demonstrated by spin-ARPES spectroscopy

Electron systems that possess light-like dispersion relations or the conical Dirac spectrum, such as graphene and bismuth, have recently been shown to harbor unusual collective states in high magnetic fields. Such states are possible because their light-like electrons come in spin pairs that are chiral,which means that their direction of propagation is tied to a quantity called pseudospin that describes their location in the crystal lattice. An emerging direction in quantum materials research is the manipulation of atomic spin-orbit coupling to simulate the effect of a spin dependent magnetic field,in attempt to realize novel spin phases of matter. This effect has been proposed to realize systems consisting of unpaired Dirac cones that are helical, meaning their direction of propagation is tied to the electron spin itself, which are forbidden to exist in graphene or bismuth. The experimental existence of topological order can not be determined without spin-resolved measurements. Here we report a spin-and angle-resolved photoemission study of the hexagonal surface of the Bi2Te3 and Bi{2-x}MnxTe3 series, which is found to exhibit a single helical Dirac cone that is fully spin-polarized. Our observations of a gap in the bulk spin-degenerate band and a spin-resolved surface Dirac node close to the chemical potential show that the low energy dynamics of Bi2Te3 is dominated by the unpaired spin-helical Dirac modes. Our spin-texture measurements prove the existence of a rare topological phase in this materials class for the first time, and suggest its suitability for novel 2D Dirac spin device applications beyond the chiral variety or traditional graphene.

cond-mat.mes-hall↗

arXiv2009

Self-doping effects in epitaxially grown graphene

Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron microscopy was used to gain real-space information about the graphene surface morphology, which was compared with data obtained by angle-resolved photoemission spectroscopy to study the effect of the monolayer graphene terrace width on the low energy dispersions. By altering the graphene terrace width, we report significant changes in the electronic structure and quasiparticle relaxation time of the material, in addition to a terrace width-dependent doping effect.

cond-mat.mes-hall↗