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A. V. Kolesnikov

Publications and source records attributed to A. V. Kolesnikov.

10 recordsLinked to original sources

Topological surface states in thick partially relaxed HgTe film

Surface states of topological insulators (TIs) have been playing the central role in the majority of outstanding investigations in low-dimensional electron systems for more than 10 years. TIs based on high-quality strained HgTe films demonstrate a variety of subtle physical effects. The strain leads to a bulk band gap but limits a maximum HgTe strained film thickness, and therefore, the majority of experiments were performed on films with a thickness of less than 100 nm. Since a spatial separation of topological states is crucial for the study of a single-surface response, it is essential to increase the HgTe thickness further. In this work, by combining transport measurements together with capacitance spectroscopy, we perform an analysis of a 200-nm partially relaxed HgTe film. The Drude fit of the classical magnetotransport reveals the ambipolar electron-hole transport with a high electron mobility. A detailed analysis of Shubnikov-de Haas oscillations in both conductivity and capacitance allows us to distinguish three groups of electrons, identified as electrons on top and bottom surfaces and bulk electrons. The indirect bulk energy gap value is found to be close to zero. It is established that the significant gap decrease does not affect the surface states, which are found to be well resolved and spin nondegenerate. The presented techniques allow investigations of other three-dimensional TIs, regardless of the presence of bulk conductivity.

cond-mat.mes-hall↗

$k^*$-Metrizable Spaces and their Applications

In this paper we introduce and study so-called $k^*$-metrizable spaces forming a new class of generalized metric spaces, and display various applications of such spaces in topological algebra, functional analysis, and measure theory. By definition, a Hausdorff topological space $X$ is $k^*$-metrizable if $X$ is the image of a metrizable space $M$ under a continuous map $f:M\to X$ having a section $s:X\to M$ that preserves precompact sets in the sense that the image $s(K)$ of any compact set $K\subset X$ has compact closure in $X$.

math.GN↗

Tight-binding study of interface states in semiconductor heterojunctions

Localized interface states in abrupt semiconductor heterojunctions are studied within a tight-binding model. The intention is to provide a microscopic foundation for the results of similar studies which were based upon the two-band model within the envelope function approximation. In a two-dimensional description, the tight-binding Hamiltonian is constructed such that the Dirac-like bulk spectrum of the two-band model is recovered in the continuum limit. Localized states in heterojunctions are shown to occur under conditions equivalent to those of the two-band model. In particular, shallow interface states are identified in non-inverted junctions with intersecting bulk dispersion curves. As a specific example, the GaSb-AlSb heterojunction is considered. The matching conditions of the envelope function approximation are analyzed within the tight-binding description.

cond-mat.mtrl-sci↗

Two-scale localization of wave functions in disordered wires in a weak magnetic field

Using the supersymmetry technique combined with the transfer matrix method we calculate different physical quantities characterizing localization in disordered wires. In particular, we analyze the density-density correlation function and study effects of an external magnetic field $H$ on tails of wave functions. At zero and very strong magnetic fields, we obtain explicit expressions, valid at arbitrary distances, for all moments and for the entire distribution function of the density-density correlations. A two-scale decay is shown to be a typical feature of infinitely long wires at weak magnetic fields: The far tail of the wave functions decays twice as slow as their main body. Extending Mott's physical picture for the localized states we present a qualitative description of the crossover in the magnetic field. Our arguments can be used for any dimensionality indicating that the concept of the two-scale localization in a weak magnetic field is a general feature of localization. The effect is very sensitive to a level smearing and cannot be seen in the transmittance of a system with metallic leads. This means that the Borland conjecture may not be used for a numerical check of the two-scale localization.

cond-mat.mes-hall↗

Comment on ``Search for two-scale localization in disordered wires in a magnetic field''

In a recent work Schomerus and Beenakker [Phys. Rev. Lett. 84, 3927 (2000)] tried to check numerically our prediction about a two-scale localization in disordered wires in a weak magnetic field. According to our theory an exponential decay of wave functions with the localization length of the orthogonal ensemble is followed at larger distances by another exponential decay with the length of the unitary ensemble. Studying the transmittance, Schomerus and Beenakker did not confirm our theory. The most probable explanation they suggested is that only rare states could have the two scales while ``typical'' states have the only localization length. We suggest another explanation of the discrepancy, namely, that the Borland conjecture relating the transmittance and wave functions to each other may not be used for studying the effect of the magnetic field on the tails of wave functions.

cond-mat.mes-hall↗

Localization-delocalization transition in disordered systems with a direction

Using the supersymmetry technique, we study the localization-delocalization transition in quasi-one-dimensional non-Hermitian systems with a direction. In contrast to chains, our model captures the diffusive character of carriers' motion at short distances. We calculate the joint probability of complex eigenvalues and some other correlation functions. We find that the transition is abrupt and occurs as a result of an interplay between two saddle-points in the free energy functional.

cond-mat.dis-nn↗

Two-scale localization in disordered wires in a magnetic field

Calculating the density-density correlation function for disordered wires, we study localization properties of wave functions in a magnetic field. The supersymmetry technique combined with the transfer matrix method is used. It is demonstrated that at arbitrarily weak magnetic field the far tail of the wave functions decays with the length $L_{\rm cu}=2L_{\rm co}$, where $L_{\rm co}$ and $L_{\rm cu}$ are the localization lengths in the absence of a magnetic field and in a strong magnetic field, respectively. At shorter distances, the decay of the wave functions is characterized by the length $L_{\rm co}$. Increasing the magnetic field broadens the region of the decay with the length $L_{\rm cu}$, leading finally to the decay with $L_{\rm cu}$ at all distances. In other words, the crossover between the orthogonal and unitary ensembles in disordered wires is characterized by two localization lengths. This peculiar behavior must result in two different temperature regimes in the hopping conductivity with the boundary between them depending on the magnetic field.

cond-mat.mes-hall↗

Quantum mechanics with coordinate-dependent mass

We study a motion of quantum particles, whose properties depend on one coordinate so that they can move freely in the perpendicular direction. A rotationally-symmetric Hamiltonian is derived and applied to study a general interface formed between two semiconductors. We predict a new type of electron states, localized at the interface. They appear whenever the two bulk dispersions intersect. These shallow states lie near the point of intersection and are restricted to a finite range of perpendicular momentum. The scattering of carriers by the interface is discussed.

cond-mat↗

Interface states in junctions of two semiconductors with intersecting dispersion curves

A novel type of shallow interface state in junctions of two semiconductors without band inversion is identified within the envelope function approximation, using the two-band model. It occurs in abrupt junctions when the interband velocity matrix elements of the two semiconductors differ and the bulk dispersion curves intersect. The in-plane dispersion of the interface state is found to be confined to a finite range of momenta centered around the point of intersection. These states turn out to exist also in graded junctions, with essentially the same properties as in the abrupt case.

cond-mat↗

Distribution of complex eigenvalues for symplectic ensembles of non-Hermitian matrices

Symplectic ensemble of disordered non-Hermitian Hamiltonians is studied. Starting from a model with an imaginary magnetic field, we derive a proper supermatrix $σ$-model. The zero-dimensional version of this model corresponds to a symplectic ensemble of weakly non-Hermitian matrices. We derive analytically an explicit expression for the density of complex eigenvalues. This function proves to differ qualitatively from those known for the unitary and orthogonal ensembles. In contrast to these cases, a {\it depletion} of eigenvalues near the real axis occurs. The result about the depletion is in agreement with a previous numerical study performed for QCD models.

cond-mat.dis-nn↗