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A. V. Kudrin

Publications and source records attributed to A. V. Kudrin.

12 recordsLinked to original sources

High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers

The layers of a high-temperature novel GaAs:Fe diluted magnetic semiconductor (DMS) with an average Fe content up to 20 at. % were grown on (001) i-GaAs substrates using a pulsed laser deposition in a vacuum. The transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy investigations revealed that the conductive layers obtained at 180 and 200 C are epitaxial, do not contain any second-phase inclusions, but contain the Fe-enriched columnar regions of overlapped microtwins. The TEM investigations of the non-conductive layer obtained at 250 C revealed the embedded coherent Fe-rich clusters of GaAs:Fe DMS. The X-ray photoelectron spectroscopy investigations showed that Fe atoms form chemical bonds with Ga and As atoms with almost equal probability and thus the comparable number of Fe atoms substitute on Ga and As sites. The n-type conductivity of the obtained conductive GaAs:Fe layers is apparently associated with electron transport in a Fe acceptor impurity band within the GaAs band gap. A hysteretic negative magnetoresistance was observed in the conductive layers up to room temperature. Magnetoresistance measurements point to the out-of-plane magnetic anisotropy of the conductive GaAs:Fe layers related to the presence of the columnar regions. The studies of the magnetic circular dichroism confirm that the layers obtained at 180, 200 and 250 C are intrinsic ferromagnetic semiconductors and the Curie point can reach up to at least room temperature in case of the conductive layer obtained at 200 C. It was suggested that in heavily Fe-doped GaAs layers the ferromagnetism is related to the Zener double exchange between Fe atoms with different valence states via an intermediate As and Ga atom.

physics.app-ph

The formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb layers

Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb layers were fabricated on GaAs substrates by pulsed laser sputtering of InSb, GaAs, GaSb, Sb and Fe targets in a vacuum. Transmission electron microscopy and energy-dispersive x-ray spectroscopy reveal a strong dependence of the phase composition of the (In,Fe)Sb compound on the growth temperature. An increase of the latter from 220C to 300C leads to a coalescence of Fe atoms and formation of a secondary crystalline phase in the (In,Fe)Sb layer with a total Fe content of ca. 10 at. %. At the same time, the Ga0.8Fe0.2Sb layers obtained at 220C and 300C are single-phase. The separate In0.8Fe0.2Sb and Ga0.8Fe0.2Sb layers grown on i-GaAs at 220C are DMS with Curie temperatures of ca. 190 K and 170 K, respectively. The three-layer p-i-n diode (In,Fe)Sb/GaAs/(Ga,Fe)Sb structure grown on a GaAs substrate at 220C with a Fe content of ca. 10 at. % in the single-phase (In,Fe)Sb and (Ga,Fe)Sb layers has a rather high crystalline quality and can be considered as a prototype of a bipolar spintronic device based on Fe-doped III-V semiconductors.

physics.app-ph

Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration and Fermi level position

The influence of He+ ion irradiation on the transport and magnetic properties of epitaxial layers of a diluted magnetic semiconductor (DMS) (In,Fe)Sb, a two-phase (In,Fe)Sb composite and a nominally undoped InSb semiconductor has been investigated. In all layers, a conductivity type conversion from the initial n-type to the ptype has been found. The ion fluence at which the conversion occurs depends on the Fe concentration in the InSb matrix. Magnetotransport properties of the two-phase (In,Fe)Sb layer are strongly affected by ferromagnetic Fe inclusions. An influence of the number of electrically active radiation defects on the magnetic properties of the single-phase In0.75Fe0.25Sb DMS has been found. At the same time, the results show that the magnetic properties of the In0.75Fe0.25Sb DMS are quite resistant to significant changes of the charge carrier concentration and the Fermi level position. The results confirm a weak interrelation between the ferromagnetism and the charge carrier concentration in (In,Fe)Sb.

cond-mat.mtrl-sci

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

We reveal the nature of transport and ferromagnetic properties of the GaAs structure with the single Mn δ-doped layer. To modify the properties of the structure the electrically active radiation defects are created by irradiation with helium ions. The investigations show that the transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in the valence band and the channel associated with electron transport in the Mn impurity band) and that the ferromagnetic properties are determined by the electrons localized at the allowed states within the Mn impurity band. The results also help to understand the features of structures with the Mn δ-layer nearby the quantum well.

physics.app-ph

Magnetic properties, chemical and phase composition of thin manganese silicide films fabricated by pulsed laser deposition

Manganese silicide (MnxSiy) thin films with Mn content (CMn) varied from 24 at. % to 52 at. % were grown on i-GaAs (100) substrates. Chemical, phase composition and room temperature magnetic properties of the films were investigated. It was demonstrated that manganese silicide films revealing ferromagnetic properties are multiphase systems. The phases, which are believed to be non-magnetic at room temperature, are compounds with Mn concentration exceeding the average Mn content of the film (higher manganese silicide, MnSi and Mn5Si3). Magnetic properties revealed are attributed with the secondary phases which are Mn doped silicon (Mn:Si) or Mn depleted compounds. For nearly single phase films (with very small 2-nd phase ratio) no room temperature ferromagnetism was observed.

cond-mat.mes-hall

High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor

The (In,Fe)Sb layers with the Fe content up to 13 at. % have been grown on (001) GaAs substrates using the pulsed laser deposition. The TEM investigations show that the (In,Fe)Sb layers are epitaxial and free of the inclusions of a second phase. The observation of the hysteretic magnetoresistance curves at temperatures up to 300 K reveals that the Curie point is above room temperature. The resonant character of magnetic circular dichroism confirms the intrinsic ferromagnetism in the (In,Fe)Sb layers. We suggest that the ferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparently is determined by the mechanism of superexchange interaction between Fe atoms (This work was presented at the XXI Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v.1, p. 195), http://nanosymp.ru/UserFiles/Symp/2017_v1.pdf).

cond-mat.mtrl-sci

Plasmons in QED Vacuum

The problem of longitudinal oscillations of an electric field and a charge polarization density in QED vacuum is considered. Within the framework of semiclassical analysis, we calculate time-periodic solutions of bosonized (1+1)-dimensional QED (massive Schwinger model). Applying the Bohr--Sommerfeld quantization condition, we determine the mass spectrum of charge-zero bound states (plasmons) which correspond in quantum theory to the found classical solutions. We show that the existence of such plasmons does not contradict any fundamental physical laws and study qualitatively their excitation in (3+1)-dimensional real world.

physics.class-ph

Nonlinear normal modes in electrodynamic systems: A nonperturbative approach

We consider electromagnetic nonlinear normal modes in cylindrical cavity resonators filled with a nonlinear nondispersive medium. The key feature of the analysis is that exact analytical solutions of the nonlinear field equations are employed to study the mode properties in detail. Based on such a nonperturbative approach, we rigorously prove that the total energy of free nonlinear oscillations in a distributive conservative system, such as that considered in our work, can exactly coincide with the sum of energies of the normal modes of the system. This fact implies that the energy orthogonality property, which has so far been known to take place only for linear oscillations and fields, can also be observed in the nonlinear oscillatory system.

physics.class-ph

Anomalous Hall effect in two-phase semiconductor structures: the crucial role of ferromagnetic inclusions

The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of ferromagnetic inclusions and by an inhomogeneous distribution of the current density in the layer. The hysteretic dependence of the average magnetization of ferromagnetic inclusions on an external magnetic field results in a hysteretic dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext) dependence (i.e. observation of the anomalous Hall effect) in thin conductive layers with ferromagnetic inclusions in the absence of carriers spin polarization.

cond-mat.mes-hall

Exact Axisymmetric Solutions of the Maxwell Equations in a Nonlinear Nondispersive Medium

The features of propagation of intense waves are of great interest for theory and experiment in electrodynamics and acoustics. The behavior of nonlinear waves in a bounded volume is of especial importance and, at the same time, is an extremely complicated problem. It seems almost impossible to find a rigorous solution to such a problem even for any model of nonlinearity. We obtain the first exact solution of this type. We present a new method for deriving exact solutions of the Maxwell equations in a nonlinear medium without dispersion and give examples of the obtained solutions that describe propagation of cylindrical electromagnetic waves in a nonlinear nondispersive medium and free electromagnetic oscillations in a cylindrical cavity resonator filled with such a medium.

physics.class-ph

Exact self-similar solutions in Born-Infeld theory

We present a new class of exact self-similar solutions possessing cylindrical or spherical symmetry in Born-Infeld theory. A cylindrically symmetric solution describes the propagation of a cylindrical electromagnetic disturbance in a constant background magnetic field in Born-Infeld electrodynamics. We show that this solution corresponds to vacuum breakdown and the subsequent propagation of an electron-positron avalanche. The proposed method of finding exact analytical solutions can be generalized to the model of a spherically symmetric scalar Born-Infeld field in the ($n+1$)-dimensional Minkowski space-time. As an example, the case $n=3$ is discussed.

physics.class-ph

Electromagnetic Oscillations in a Driven Nonlinear Resonator: A New Description of Complex Nonlinear Dynamics

Many intriguing properties of driven nonlinear resonators, including the appearance of chaos, are very important for understanding the universal features of nonlinear dynamical systems and can have great practical significance. We consider a cylindrical cavity resonator driven by an alternating voltage and filled with a nonlinear nondispersive medium. It is assumed that the medium lacks a center of inversion and the dependence of the electric displacement on the electric field can be approximated by an exponential function. We show that the Maxwell equations are integrated exactly in this case and the field components in the cavity are represented in terms of implicit functions of special form. The driven electromagnetic oscillations in the cavity are found to display very interesting temporal behavior and their Fourier spectra contain singular continuous components. To the best of our knowledge, this is the first demonstration of the existence of a singular continuous (fractal) spectrum in an exactly integrable system.

nlin.CD