arXiv subjects

A. V. Stier

Publications and source records attributed to A. V. Stier.

14 recordsLinked to original sources

arXiv2025

Magnetic brightening of light-like excitons in a monolayer semiconductor

Monolayer transition-metal dichalcogenides, such as WSe$_2$, are direct gap, multi-valley semiconductors. Long-range electron-hole exchange interactions mix the valleys, yielding dispersion relations for massive ($\propto Q^2$) as well as light-like ($\propto Q$) excitons. We report magneto-photoluminescence spectroscopy of excitons in the monolayer semiconductor WSe$_2$ to $B = \pm25$T. The magnetic field-dependent line shape of the neutral exciton reveals the emergence of a new blue-detuned emission peak in both field orientations. Analyzing the distinct magnetic field-dependent shifts of both peaks facilitates the identification of the emergent feature as a spin-singlet with a significantly smaller reduced exciton mass as compared to the neutral exciton. The intensity of the emergent feature increases with magnetic field according to $\propto B^2$, as expected for a linear dispersion relation. The density-dependent diamagnetic shift ratios of both features follow the expected density dependence of the electron-hole exchange interactions. We interpret our observations within a picture of magnetic-field-induced coupling between the bright massive and quasi dark light-like exciton, leading to its brightening.

cond-mat.mes-hall↗

arXiv2022

Moiré straintronics: a universal platform for reconfigurable quantum materials

Large scale two-dimensional (2D) moiré superlattices are driving a revolution in designer quantum materials. The electronic interactions in these superlattices, strongly dependent on the periodicity and symmetry of the moiré pattern, critically determine the emergent properties and phase diagrams. To date, the relative twist angle between two layers has been the primary tuning parameter for a given choice of constituent crystals. Here, we establish strain as a powerful mechanism to in-situ modify the moiré periodicity and symmetry. We develop an analytically exact mathematical description for the moiré lattice under arbitrary in-plane heterostrain acting on any bilayer structure. We demonstrate the ability to fine-tune the moiré lattice near critical points, such as the magic angle in bilayer graphene, or fully reconfigure the moiré lattice symmetry beyond that imposed by the unstrained constituent crystals. Due to this unprecedented simultaneous control over the strength of electronic interactions and lattice symmetry, 2D heterostrain provides a powerful platform to engineer, tune, and probe strongly correlated moiré materials.

cond-mat.mes-hall↗

arXiv2019

Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields

In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale is substantial --tens of teslas or more-- due to heavy carrier masses and huge exciton binding energies. Here we report absorption spectroscopy of monolayer MoS$_2$, MoSe$_2$, MoTe$_2$, and WS$_2$ in very high magnetic fields to 91~T. We follow the diamagnetic shifts and valley Zeeman splittings of not only the exciton's $1s$ ground state but also its excited $2s$, $3s$, ..., $ns$ Rydberg states. This provides a direct experimental measure of the effective (reduced) exciton masses and dielectric properties. Exciton binding energies, exciton radii, and free-particle bandgaps are also determined. The measured exciton masses are heavier than theoretically predicted, especially for Mo-based monolayers. These results provide essential and quantitative parameters for the rational design of opto-electronic van der Waals heterostructures incorporating 2D semiconductors.

cond-mat.mes-hall↗

arXiv2019

Ultra-compact photodetection in atomically thin MoSe$_2$

Excitons in atomically-thin semiconductors interact very strongly with electromagnetic radiation and are necessarily close to a surface. Here, we exploit the deep-subwavelength confinement of surface plasmon polaritons (SPPs) at the edge of a metal-insulator-metal plasmonic waveguide and their proximity of 2D excitons in an adjacent atomically thin semiconductor to build an ultra-compact photodetector. When subject to far-field excitation we show that excitons are created throughout the dielectric gap region of our waveguide and converted to free carriers primarily at the anode of our device. In the near-field regime, strongly confined SPPs are launched, routed and detected in a 20nm narrow region at the interface between the waveguide and the monolayer semiconductor. This leads to an ultra-compact active detector region of only ~0.03$μm ^2$ that absorbs 86% of the propagating energy in the SPP. Due to the electromagnetic character of the SPPs, the spectral response is essentially identical to the far-field regime, exhibiting strong resonances close to the exciton energies. While most of our experiments are performed on monolayer thick MoSe$_2$, the photocurrent-per-layer increases super linearly in multilayer devices due to the suppression of radiative exciton recombination. These results demonstrate an integrated device for nanoscale routing and detection of light with the potential for on-chip integration at technologically relevant, few-nanometer length scales.

physics.app-ph↗

arXiv2018

Superradiant coupling effects in transition-metal dichalcogenides

Cooperative effects allow for fascinating characteristics in light-matter interacting systems. Here, we study naturally occurring superradiant coupling in a class of quasi-two-dimensional, layered semiconductor systems. We perform optical absorption experiments of the lowest exciton for transition-metal dichalcogenides with different numbers of atomic layers. We examine two representative materials, MoSe$_2$ and WSe$_2$, using incoherent broadband white light. The measured transmission at the A exciton resonance does not saturate for optically thick samples consisting of hundreds of atomic layers, and the transmission varies nonmonotonously with the layer number. A self-consistent microscopic calculation reproduces the experimental observations, clearly identifying superradiant coupling effects as the origin of this unexpected behavior.

cond-mat.mes-hall↗

arXiv2017

Unusual thickness dependence of exciton characteristics in 2D perovskite quantum wells

Understanding the nature and energy distribution of optical resonances is of central importance in low-dimensional materials$^{1-4}$ and its knowledge is critical for designing efficient optoelectronic devices. Ruddlesden-Popper halide perovskites are 2D solution-processed quantum wells with a general formula A$_2$A'$_{n-1}$M$_n$X$_{3n+1}$, where optoelectronic properties can be tuned by varying the perovskite layer thickness (n value), and have recently emerged as efficient semiconductors with technologically relevant stability. However, fundamental questions concerning the nature of optical resonances (excitons or free-carriers) and the exciton reduced mass, and their scaling with quantum well thickness remains unresolved. Here, using optical spectroscopy and 60-Tesla magneto-absorption supported by modelling, we unambiguously demonstrate that the optical resonances arise from tightly bound excitons with unexpectedly high exciton reduced mass (0.20 m0) and binding energies varying from 470 meV to 125 meV with increasing thickness from n=1 to 5. Our work demonstrates the dominant role of Coulomb interactions in 2D solution-processed quantum wells and presents unique opportunities for next-generation optoelectronic and photonic devices.

cond-mat.mtrl-sci↗

arXiv2016

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields

Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6 to 300 K. The $14\times14$ \textbf{P}$\cdot$\textbf{p} band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magneto-donor states in the GaAs wells and possibly in the AlGaAs barriers. The magneto-donor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

cond-mat.str-el↗

arXiv2013

A sudden collapse in the transport lifetime across the topological phase transition in $(Bi_{1-x}In_x)_2 Se_3$

Topological insulators (TIs) are newly discovered states of matter with robust metallic surface states protected by the topological properties of the bulk wavefunctions. A quantum phase transition (QPT) from a TI to a conventional insulator and a change in topological class can only occur when the bulk band gap closes. In this work, we have utilized time-domain terahertz spectroscopy (TDTS) to investigate the low frequency conductance in (Bi$_{1-x}$In$_x$)$_2$Se$_3$ as we tune through this transition by indium substitution. Above certain substitution levels we observe a collapse in the transport lifetime that indicates the destruction of the topological phase. We associate this effect with the threshold where states from opposite surfaces hybridize. The substitution level of the threshold is thickness dependent and only asymptotically approaches the bulk limit $x \approx 0.06$ where a maximum in the mid-infrared absorption is exhibited. This absorption can be identified with the bulk band gap closing and a change in topological class. The correlation length associated with the QPT appears as the evanescent length of the surface states. The observation of the thickness-dependent collapse of the transport lifetime shows the unusual role that finite size effects play in this topological QPT.

cond-mat.str-el↗

arXiv2013

Terahertz dynamics of a topologically protected state: quantum Hall effect plateaus near cyclotron resonance in a GaAs/AlGaAs heterojunction

We measure the Hall conductivity of a two-dimensional electron gas formed at a GaAs/AlGaAs heterojunction in the terahertz regime close to the cyclotron resonance frequency by employing a highly sensitive Faraday rotation method coupled with electrical gating of the sample to change the electron density. We observe clear plateau-and step-like features in the Faraday rotation angle vs. electron density and magnetic field (Landau-level filling factor), which are the high frequency manifestation of quantum Hall plateaus - a signature of topologically protected edge states. The results are compared to a recent dynamical scaling theory.

cond-mat.mes-hall↗

arXiv2012

Polarization modulation time-domain terahertz polarimetry

We present high precision measurements of polarization rotations in the frequency range from 0.1 to 2.5 THz using a polarization modulation technique. A motorized stage rotates a polarizer at ~80 Hz, and the resulting modulation of the polarization is measured by a lock-in technique. We achieve an accuracy of 0.05° (900 μrad) and a precision of 0.02° (350 μrad) for small rotation angles. A detailed mathematical description of the technique is presented, showing its ability to fully characterize elliptical polarizations from 0.1 to 2.5 THz.

physics.optics↗

arXiv2012

Aging and reduced bulk conductance in thin films of the topological insulator Bi$_2$Se$_3$

We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi$_2$Se$_3$. We find: 1) two contributions of mobile charge carriers to the THz conductivity immediately after growth, and 2) the spectral weight of the smaller of these decays significantly over a period of several days as the film is exposed to ambient conditions, while the other remains relatively constant. We associate the former with a bulk response, and the latter with the surface. The surface response exhibits the expected robustness of the carriers from 2D topological surface states. We find no evidence for a third spectral feature derived from topologically trivial surface states.

cond-mat.str-el↗

arXiv2012

Low energy electrodynamics of the Kondo-lattice antiferromagnet CeCu$_2$Ge$_2$

We present time-domain THz spectroscopy data of a thin film of the Kondo-lattice antiferromagnet CeCu$_2$Ge$_2$. The low frequency complex conductivity has been obtained down to temperatures below the onset of magnetic order. At low temperatures a narrow Drude-like peak forms, which is similar to ones found in other heavy fermion compounds that do not exhibit magnetic order. Using this data in conjunction with DC resistivity measurements, we obtain the frequency dependence of the scattering rate and effective mass through an extended Drude model analysis. The zero frequency limit of this analysis yields evidence for large mass renormalization even in the magnetic state, the scale of which agrees closely with that obtained from thermodynamic measurements.

cond-mat.str-el↗

arXiv2012

Terahertz Magneto Optical Polarization Modulation Spectroscopy

We report the development of new terahertz techniques for rapidly measuring the complex Faraday angle in systems with broken time-reversal symmetry using the cyclotron resonance of a GaAs two-dimensional electron gas in a magnetic field as a system for demonstration of performance. We have made polarization modulation, high sensitivity (< 1 mrad) narrow band rotation measurements with a CW optically pumped molecular gas laser, and by combining the distinct advantages of terahertz (THz) time domain spectroscopy and polarization modulation techniques, we have demonstrated rapid broadband rotation measurements to < 5 mrad precision.

cond-mat.mtrl-sci↗

arXiv2011

THz response and colossal Kerr rotation from the surface states of the topological insulator Bi$_2$Se$_3$

Ordered states of matter are typically categorized by their broken symmetries. With the ordering of spins in a ferromagnet or the freezing of a liquid into a solid, the loss of symmetry distinguishes the ordered state from the disordered one. In contrast, topological states are distinguished by specific \textit{topological} properties that are encoded in their quantum mechanical wavefunctions. Frequently, a consequence of these properties is that there are robust "topologically protected" states on the sample's boundaries. The edge states of the quantum Hall effect (QHE) are the classic example. In the last few years, it was realized that another class of such topological matter may exist in 3D band insulators with large spin-orbit interaction. These so-called topological insulators are predicted to host robust surface states, which exhibit a number of interesting properties including spin helicity, immunity to back-scattering, and weak \textit{anti}--localization. There are predictions of a number of unusual phenomena associated with these surface states, including a proximity-effect-induced exotic superconducting state with Majorana fermions bound to a vortex and an `axion' electromagnetic response, and proposals for applications, such as their use in terahertz devices. In this Letter we report the observation of an unprecedentedly large rotation of the polarization plane of linearly polarized light reflected from thin films of the topological insulator Bi$_2$Se$_3$ in magnetic fields. This Kerr rotation can be as large as 65$^\circ$ and is due almost entirely to the surface states. Our results are evidence for the intrinsic response of the topologically protected surface states and provide a benchmark for the large magneto-electric effect predicted for these materials.

cond-mat.str-el↗