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A. V. Sumant

Publications and source records attributed to A. V. Sumant.

2 recordsLinked to original sources

Transfer of Graphene with Protective Oxide Layers

Transfer of graphene, grown by Chemical Vapor Deposition (CVD), to a substrate of choice, typically involves deposition of a polymeric layer (typically, poly(methyl methacrylate, PMMA or polydimethylsiloxane, PDMS). These polymers are quite hard to remove without leaving some residues behind. Here we study a transfer of graphene with a protective thin oxide layer. The thin oxide layer is grown by Atomic Deposition Layer (ALD) on the graphene right after the growth stage on Cu foils. One can further aid the oxide-graphene transfer by depositing a very thin polymer layer on top of the composite (much thinner than the usual thickness) following by a more aggressive polymeric removal methods, thus leaving the graphene intact. We report on the nucleation growth process of alumina and hafnia films on the graphene, their resulting strain and on their optical transmission. We suggest that hafnia is a better oxide to coat the graphene than alumina in terms of uniformity and defects.

physics.app-ph

High Quantum Efficiency Ultrananocrystalline Diamond Photocathode: Negative Electron Affinity Meets $n$-doping

We report results of quantum efficiency (QE) measurements carried out on a 150 nm thick nitrogen-incorporated ultrananocrystalline diamond terminated with hydrogen; abbreviated as (N)UNCD:H. (N)UNCD:H demonstrated a QE of $\sim$10$^{-3}$ ($\sim$0.1%) at 254 nm. Moreover, (N)UNCD:H was sensitive in visible light with a QE of $\sim$5$\times$10$^{-8}$ at 405 nm and $\sim$5$\times$10$^{-9}$ at 436 nm. After growth and prior to QE measurements, samples were exposed to air for about 2 hours for transfer and loading. Such design takes advantage of a key combination: 1) H-termination inducing negative electron affinity (NEA) on the (N)UNCD and stabilizies its surface against air exposure; and 2) N-incorporation inducing $n$-type conductivity in intrinsically insulating UNCD.

cond-mat.mtrl-sci