arXiv subjects

A. V. Suslov

Publications and source records attributed to A. V. Suslov.

At least 19 recordsLinked to original sources

arXiv2026

AC Conductance in n-InSb Structures with Quantum Well. Acoustic Studies

We studied the ac conductance of an $n$-InSb quantum well structure using acoustic methods in magnetic fields up to 18 T and at temperatures ranging from 20 to 500 mK. We attribute the unusual magnetic field dependences of surface acoustic wave (SAW) attenuation and velocity observed in the experiment to the presence of a conducting layer parallel to the quantum well in the sample. We successfully separated the contributions from both the quantum well and the shunting layer, enabling the identification of their distinct conduction mechanisms. Furthermore, by employing the coincidence technique, we determined the electron g-factor in the quantum well and investigated its dependence on the degree of spin polarization.

cond-mat.mes-hall↗

arXiv2023

Quasi-Stable Structures in Equilibrium Dense Bismuth Melt: Experimental and First Principles Theoretical Studies

Near the melting temperature, equilibrium bismuth melt is characterized by structural features that are absent in equilibrium monatomic simple liquids. In the present work, the structure of bismuth melt is studied by X-ray diffraction experiments and quantum chemical calculations. The presence of quasi-stable structures in the melt has been found, the lifetime of which exceeds the structural relaxation time of this melt. It is shown that these structures are characterized by a low degree of ordering and spatial localisation. It was found that up to $50$\% of the atoms in the melt can be involved in the formation of these structures. The elementary structural units of these structures are triplets of regular geometry with the characteristic lengths $3.25$ Å~and $4.7$ Å~as well as with the characteristic angles $45^{\circ}$ and $90^{\circ}$. The characteristic lengths of these triplets are fully consistent with correlation lengths associated with the short-range order in bismuth melt.

cond-mat.mtrl-sci↗

arXiv2023

Coexistence of two hole phases in high-quality $p$-GaAs/AlGaAs in the vicinity of Landau level filling factors $ν$=1 and $ν$=(1/3)

We focused on the transverse AC magneto-conductance of a high mobility $p$-GaAs/AlGaAs quantum well ($p=1.2\times 10^{11}$~cm$^{-2}$) in the vicinity of two values of the Landau level filling factor $ν$: $ν=1$ (integer quantum Hall effect) and $ν=1/3$ (fractional quantum Hall effect). The complex transverse AC conductance, $σ_{xx}^{AC} (ω)$, was found from simultaneous measurements of attenuation and velocity of surface acoustic waves (SAWs) propagating along the interface between a piezoelectric crystal and the two-dimensional hole system under investigation. We analyzed both the real and imaginary parts of the hole conductance and compared the similarities and differences between the results for filling factor 1 and filling factor 1/3. Both to the left and to the right of these values maxima of a specific shape, "wings", arose in the $σ(ν)$ dependences at those two $ν$. Analysis of the results of our acoustic measurements at different temperatures and surface acoustic wave frequencies allowed us to attribute these wings to the formation of collective localized states, namely the domains of a pinned Wigner crystal, i.e., a Wigner solid. While the Wigner solid has been observed in 2D hole systems previously, we were able to detect 20 it at the highest hole density and, therefore, the lowest hole-hole interaction reported.

cond-mat.mes-hall↗

arXiv2021

Dresselhaus spin-orbit interaction in the p-AlGaAs/GaAs/AlGaAs structure with a square quantum well: Surface Acoustic Waves Study

The effect of spin-orbit interaction was studied in a high-quality $p$-AlGaAs/GaAs/AlGaAs structure with a square quantum well using acoustic methods. The structure grown on a GaAs (100) substrate was symmetrically doped with carbon on both sides of the quantum well. Shubnikov-de Haas-type oscillations of the ac conductance of two-dimensional holes were measured. At a low magnetic field $B <$2 T conductance oscillations undergo beating induced by a spin-orbit interaction. Analysis of the beating character made it possible to separate the conductance contributions from the two heavy holes subbands split by the spin-orbit interaction. For each of the subbands the values of the effective masses and quantum relaxation times have been determined, and then the energy of the spin-orbit interaction was obtained. The quantum well profile, as well as the small magnitude of the spin-orbit interaction, allowed us to conclude that the spin-orbit splitting is governed by the Dresselhaus mechanism.

cond-mat.mes-hall↗

arXiv2020

Magnetostriction of AlFe2B2 in High Magnetic Fields

Using the experimental capability of the novel X-ray diffraction instrument available at the 25 Tesla Florida Split Coil Magnet at the NHMFL, Tallahassee we present an extensive investigation on the magnetostriction of polycrystalline AlFe2B2. The magnetostriction was measured near the ferromagnetic transition temperature (Curie temperature TC = 280 K, determined via DC magnetization measurements), namely, at 250, 290, and 300 K. AlFe2B2 exhibits an anisotropic change in lattice parameters as a function of magnetic field near the Curie temperature, and a monotonic variation as a function of applied field has been observed, i.e., the c-axis increases significantly while the a- and b-axes decrease with the increasing field in the vicinity of TC, irrespective of the measurement temperature. The volume magnetostriction decreases with decreasing temperature and changes its sign across TC. Density functional theory calculations for the non-polarized and spin-polarized (ferromagnetic) models confirm that the observed changes in lattice parameters due to spin polarization are consistent with the experiment. The relationships for magnetostriction are estimated based on a simplified Landau model that agrees well with the experimental results.

cond-mat.mtrl-sci↗

arXiv2020

Enhanced spin correlations in the Bose-Einstein condensate compound Sr3Cr2O8

Combined experimental and modeling studies of the magnetocaloric effect, ultrasound, and magnetostriction were performed on single-crystal samples of the spin-dimer system Sr$_3$Cr$_2$O$_8$ in large magnetic fields, to probe the spin-correlated regime in the proximity of the field-induced XY-type antiferromagnetic order also referred to as a Bose-Einstein condensate of magnons. The magnetocaloric effect, measured under adiabatic conditions, reveals details of the field-temperature ($H,T$) phase diagram, a dome characterized by critical magnetic fields $H_{c1}$ = 30.4 T, $H_{c2}$ = 62 T, and a single maximum ordering temperature $T_{\rm max}(45~$T$)\simeq$8 K. The sample temperature was observed to drop significantly as the magnetic field is increased, even for initial temperatures above $T_{\rm max}$, indicating a significant magnetic entropy associated to the field-induced closure of the spin gap. The ultrasound and magnetostriction experiments probe the coupling between the lattice degrees of freedom and the magnetism in Sr$_3$Cr$_2$O$_8$. Our experimental results are qualitatively reproduced by a minimalistic phenomenological model of the exchange-striction by which sound waves renormalize the effective exchange couplings.

cond-mat.str-el↗

arXiv2019

Composite fermions in a wide quantum well in the vicinity of the filling factor 1/2

Using acoustic method we study dependences of transverse AC conductance, $σ(ω)$, on magnetic field, temperature and the amplitude of AC electric field in a wide (75 nm) quantum well (QW) structure focusing on the vicinity of the filling factor $ν=1/2$. Measurements are performed in the frequency domain 30-307 MHz and in the temperature domain 20-500 mK. Usually, in wide QW structures closely to $ν=1/2$ the fractional quantum Hall effect (FQHE) regime is realized at some parameters of the sample. However, in our structure, at $ν=1/2$ it is a compressible state corresponding to gas of composite fermions which is observed. This is confirmed by apparent frequency independence and weakly decreasing temperature dependence of $\mathrm{Re}\, σ(ω)$. Comparing the dependences of this quantity on temperature and power of the acoustic wave we conclude that the observed nonlinear behavior of the conductance is compatible with heating of the composite fermions by the acoustic wave. For comparison, we also study the vicinity of $ν= 3/2$ where the FQHE regime is clearly observed.

cond-mat.mes-hall↗

arXiv2019

Electronic band structure in $n$-type GaAs/AlGaAs wide quantum wells in tilted magnetic field

Oscillations of the real component of AC conductivity $σ_1$ in a magnetic field were measured in the n-AlGaAs/GaAs structure with a wide (75 nm) quantum well by contactless acoustic methods at $T$=(20-500)~mK. In a wide quantum well, the electronic band structure is associated with the two-subband electron spectrum, namely the symmetric (S) and antisymmetric (AS) subbands formed due to electrostatic repulsion of electrons. A change of the oscillations amplitude in tilted magnetic field observed in the experiments occurs due to crossings of Landau levels of different subbands (S and AS) at the Fermi level. The theory developed in this work shows that these crossings are caused by the difference in the cyclotron energies in the S and AS subbands induced by the in-plane magnetic field.

cond-mat.mes-hall↗

arXiv2018

Observation of sub-kelvin superconductivity in Cd$_3$As$_2$ thin films

We report the first experimental observation of superconductivity in Cd$_3$As$_2$ thin films without application of external pressure. Surface studies suggest that the observed transport characteristics are related to the polycrystalline continuous part of investigated films with homogeneous distribution of elements and the Cd-to-As ratio close to stoichiometric Cd$_3$As$_2$. The latter is also supported by Raman spectra of the studied films, which are similar to those of Cd$_3$As$_2$ single crystals. The formation of superconducting phase in films under study is confirmed by the characteristic behavior of temperature and magnetic field dependence of samples resistances, as well as by the presence of pronounced zero-resistance plateaux in $dV/dI$ characteristics. The corresponding $H_c-T_c$ plots reveal a clearly pronounced linear behavior within the intermediate temperature range, similar to that observed for bulk Cd$_3$As$_2$ and Bi$_2$Se$_3$ films under pressure, suggesting the possibility of nontrivial pairing in the films under investigation. We discuss a possible role of sample inhomogeneities and crystal strains in the observed phenomena.

cond-mat.mes-hall↗

arXiv2018

Linear magnetoresistance in the low-field limit in density-wave materials

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects [1], unusual topological band structures [2], and inhomogeneities that lead to wandering current paths [3, 4] can induce a crossover from quadratic to linear magnetoresistance with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear magnetoresistance. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semi-classical narrative for a broad category of materials with partially-gapped Fermi surfaces due to density waves.

cond-mat.mtrl-sci↗

arXiv2018

Intersubband scattering in n-GaAs/AlGaAs wide quantum wells

Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic scattering between the symmetric and asymmetric subbands formed due to an electrostatic barrier in the center of the quantum well. The tunneling splitting between these subbands as well as the intersubband scattering rate are determined.

cond-mat.mes-hall↗

arXiv2016

Melting of Wigner crystal in high-mobility $n$-GaAs/AlGaAs heterostructures at filling factors $0.18 > ν> 0.125$: Acoustic studies

Using acoustic methods the complex high-frequency conductance of high-mobility $n$-GaAs/AlGaAs heterostructures was determined in magnetic fields 12$÷$18~T. Based on the observed frequency and temperature dependences we conclude that in the investigated magnetic field range and at sufficiently low temperatures, $T \lesssim 200$~mK, the electron system forms a Wigner crystal deformed due to pinning by disorder. At some temperature, which depends on the electron filling factor, the temperature dependences of both components of the complex conductance get substantially changed. We have ascribed this rapid change of the conduction mechanism to melting of the Wigner crystal and study the dependence of the so-defined melting temperature on the electron filling factor.

cond-mat.mes-hall↗

arXiv2016

Fractional Quantum Hall States in a Ge Quantum Well

Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required.

cond-mat.str-el↗

arXiv2015

Crossover between localized states and pinned Wigner crystal in high-mobility n-GaAs/AlGaAs heterostructures near filling factor $ν=1$

We have measured magnetic field dependences of the attenuation and velocity of surface acoustic waves in a high-mobility $n$-GaAs/AlGaAs structure with a wide quantum well. The results allowed us to find the complex conductance, $σ(ω)$, of the heterostructure for different frequencies, temperatures and magnetic fields near filling factors $ν=1, 2$. Observed behavior of $σ(ω)$ versus magnetic field outside close vicinities of integer fillings reveals an oscillation pattern indicative of the rich fractional quantum Hall effect. Our result is that in very close vicinities of integer filling factors the AC response of a high-mobility two-dimensional structures behaves as that of a two-dimensional system of localized electrons. Namely, both real and imaginary parts of the complex AC conductance at low temperatures agree with the predictions for the two-site model for a two-dimensional hopping system. Another result is the specific temperature dependences of $σ(ω)$, which are extremely sensitive to the filling factor value. These dependences indicate a sharp crossover between the localized modes and a pinned Wigner crystal.

cond-mat.mes-hall↗

arXiv2015

Surface Acoustic Waves Probe of the Spin Phase Transition at $ν$=2/3 in n-GaAs/AlGaAs structure

High frequency (ac) conductivity in the single quantum well AlGaAs/GaAs/AlGaAs with high mobility was investigated by contactless acoustic methods in the fractional quantum Hall effect regime in perpendicular and tilted magnetic fields. We studied the dependence of ac conductivity $σ^{ac}=σ_1 - iσ_2$ on both the temperature and magnetic field tilt angle. Tilting the magnetic field relative to the sample surface enabled us to change the position of the conductivity oscillation minimum at $ν$=2/3. We measured the temperature dependence of ac conductivity for each tilt angle and for the 2/3 state we calculated the activation energy $ΔE$ which was derived by constructing the Arrhenius plot ln $σ_1$ against 1/$T$. Analyzing behavior of the activation energy in total magnetic field for the filling factor 2/3 we observed a distinct minimum which can be interpreted as the spin unpolarized-polarized phase transition.

cond-mat.mes-hall↗

arXiv2015

Wigner crystal in a two-dimensional electron system in the vicinity of filling factor 1/5: Acoustic studies

By simultaneous measurements of the attenuation and velocity of surface acoustic waves propagating in proximity to a high-quality GaAs quantum well we study the complex AC conductance of the two-dimensional electron system. Focusing on the vicinity of the filling factor $ν=1/5$ we confirm that the insulating states formed closely to this value of $ν$ are pinned Wigner crystals.

cond-mat.mes-hall↗

arXiv2015

Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe

We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considerably larger overlap of the conduction and valence subbands than in known HgTe single quantum wells (QW), which may be regulated by an applied gate voltage $V_g$. This large overlap manifests itself in a much higher critical field $B_c$ separating the range above it where the quantum peculiarities shift linearly with $V_g$ and the range below with a complicated behavior. In the latter case the $N$-shaped and double-$N$-shaped structures in the Hall magnetoresistance $ρ_{xy}(B)$ are observed with their scale in field pronouncedly enlarged as compared to the pictures observed in an analogous single QW. The coexisting electrons and holes were found in the whole investigated range of positive and negative $V_g$ as revealed from fits to the low-field $N$-shaped $ρ_{xy}(B)$ and from the Fourier analysis of oscillations in $ρ_{xx}(B)$. A peculiar feature here is that the found electron density $n$ remains almost constant in the whole range of investigated $V_g$ while the hole density $p$ drops down from the value a factor of 6 larger than $n$ at extreme negative $V_g$ to almost zero at extreme positive $V_g$ passing through the charge neutrality point. We show that this difference between $n$ and $p$ stems from an order of magnitude larger density of states for holes in the lateral valence band maxima than for electrons in the conduction band minimum. We interpret the observed reentrant sign-alternating $ρ_{xy}(B)$ between electronic and hole conductivities and its zero resistivity state in the quantum Hall range of fields on the basis of a calculated picture of magnetic levels in a DQW.

cond-mat.mes-hall↗

arXiv2014

In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures

The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings.

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