arXiv subjects

A. Vedyayev

Publications and source records attributed to A. Vedyayev.

At least 19 recordsLinked to original sources

arXiv2015

Analytical description of ballistic spin currents and torques in magnetic tunnel junctions

In this work we demonstrate explicit analytical expressions for both charge and spin currents which constitute the 2x2 spinor in magnetic tunnel junctions with noncollinear magnetizations under applied voltage. The calculations have been performed within the free electron model in the framework of the Keldysh formalism and WKB approximation. We demonstrate that spin/charge currents and spin transfer torques are all explicitly expressed through only three irreducible quantities, without further approximations. The conditions and mechanisms of deviation from the conventional sine angular dependence of both spin currents and torques are shown and discussed. It is shown in the thick barrier approximation that all tunneling transport quantities can be expressed in an extremely simplified form via Slonczewski spin polarizations and our effective spin averaged interfacial transmission probabilities and effective out-of-plane polarizations at both interfaces. It is proven that the latter plays a key role in the emergence of perpendicular spin torque as well as in the angular dependence character of all spin and charge transport considered. It is demonstrated directly also that for any applied voltage, the parallel component of spin current at the FM/I interface is expressed via collinear longitudinal spin current components. Finally, spin transfer torque behavior is analyzed in a view of transverse characteristic length scales for spin transport.

cond-mat.mes-hall↗

arXiv2012

Artificial ferroelectricity due to anomalous Hall effect in magnetic tunnel junctions

We theoretically investigated Anomalous Hall Effect (AHE) and Spin Hall Effect (SHE) transversally to the insulating spacer O, in magnetic tunnel junctions of the form F/O/F where F are ferromagnetic layers and O represents a tunnel barrier. We considered the case of purely ballistic (quantum mechanical) transport, taking into account the assymetric scattering due to spin-orbit interaction in the tunnel barrier. AHE and SHE in the considered case have a surface nature due to proximity effect. Their amplitude is in first order of the scattering potential. This contrasts with ferromagnetic metals wherein these effect are in second (side-jump scattering) and third (skew scattering) order on these potentials. The value of AHE voltage in insulating spacer may be much larger than in metallic ferromagnetic electrodes. For the antiparallel orientation of the magnetizations in the two F-electrodes, a spontaneous Hall voltage exists even at zero applied voltage. Therefore an insulating spacer sandwiched between two ferromagnetic layers can be considered as exhibiting a spontaneous ferroelectricity.

cond-mat.mes-hall↗

arXiv2011

Spin Transfer Torques induced by Spin Hall Effect

Spin accumulation and spin transfer torques induced by Spin Hall Effect in bi-layer structures comprising ferromagnetic and paramagnetic materials are theoretically investigated. The charge and spin diffusion equations taking into account spin-flip and spin Hall effect are formulated and solved analytically and numerically for in structures with simplified and complex geometry, respectively. It is demonstrated that spin torques could be efficiently produced by means of Spin Hall effect which may be further enhanced by modifying structure geometry.

cond-mat.mes-hall↗

arXiv2011

Spin-current vortices in current-perpendicular-to-plane nanoconstricted spin-valves

The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry with strongly inhomogeneous current flow. As an illustration, spin-dependent transport through a non-magnetic nanoconstriction separating two magnetic layers was investigated. Unexpected results such as vortices of spin-currents in the vicinity of the nanoconstriction were obtained. The angular variations of magnetoresistance and spin-transfer torque are strongly influenced by the structure geometry.

cond-mat.mes-hall↗

arXiv2010

Finite Element Modeling of Charge and Spin-currents in Magnetoresistive Pillars with Current Crowding Effects

The charge and spin diffusion equations taking into account spin-flip and spin-transfer torque were numerically solved using a finite element method in complex non-collinear geometry. This approach was used to study the spin-dependent transport in giant magnetoresistance metallic pillars sandwiched between extended electrodes as in magnetoresistive heads for hard disk drives. The charge current crowding around the boundaries between the electrodes and the pillar has a quite significant influence on the spin current.

cond-mat.mes-hall↗

arXiv2008

Quasi-Two-Dimensional Extraordinary Hall Effect

Quasi-two-dimensional transport is investigated in a system consisting of one ferromagnetic layer placed between two insulating layers. Using the mechanism of skew-scattering to describe the Extraordinary Hall Effect (EHE) and calculating the conductivity tensor, we compare the quasi- two-dimensional Hall resistance with the resistance of a massive sample. In this study a new mechanism of EHE (geometric mechanism of EHE) due to non-ideal interfaces and volume defects is also proposed.

cond-mat.mtrl-sci↗

arXiv2008

Spin transfer torques in magnetic tunnel junctions

This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel junctions. The most significant results are presented and the main observable characteristics are discussed. A description of the mechanism of spin transfer in ferromagnets is finally proposed. In the second part, a quantum description of spin transport in magnetic tunnel junctions with amorphous barrier is developed. The role of spin-dependent reflections as well as electron incidence and spin-filtering by the barrier are described. We show that these mechanisms give rise to specific properties of spin transfer in tunnel junctions, very different from the case of metallic spin-valves. In the third part, the theoretical observable features of spin transfer in magnetic tunnel junctions are derived and the validity of these results is discussed and compared to recent experiments. To conclude this chapter, we study the mechanism of spin transfer in half-metallic tunnel junctions, expected to mimic MgO-based magnetic tunnel junctions.

cond-mat.mes-hall↗

arXiv2007

Spin-dependent diffraction at ferromagnetic/spin spiral interface

Spin-dependent transport is investigated in ballistic regime through the interface between a ferromagnet and a spin spiral. We show that spin-dependent interferences lead to a new type of diffraction called "spin-diffraction". It is shown that this spin-diffraction leads to local spin and electrical currents along the interface. This study also shows that in highly non homogeneous magnetic configuration (non adiabatic limit), the contribution of the diffracted electrons is crucial to describe spin transport in such structures.

cond-mat.mes-hall↗

arXiv2007

Description of current-driven torques in magnetic tunnel junctions

A free electron description of spin-dependent tranport in magnetic tunnel junctions with non collinear magnetizations is presented. We investigate the origin of transverse spin density in tunnelling transport and the quantum interferences which give rise to oscillatory torques on the local magnetization. Spin transfer torque is also analyzed and an important bias asymmetry is found as well as a damped oscillatory behaviour. Furthermore, we investigate the influence of the s-d exchange coupling on torque in particular in the case of half-metallic MTJ in which the spin transfer torque is due to interfacial spin-dependent reflections.

cond-mat.mes-hall↗

arXiv2005

Spin-Polarized Current Induced Torque in Magnetic Tunnel Junctions

We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach and the divergence of the spin current. We show that both methods are equivalent, i.e. the absorption of the spin current at the interface is equivalent to the exchange interaction between the electron spins and the local magnetization. The transverse components of the spin torque parallel and perpendicular to the interface oscillate with different phase and decay in the ferromagnetic layer (FM) as a function of the distance from the interface. The period of oscillations is inversely proportional to the difference between the Fermi-momentum of the majority and minority electrons. The phase difference between the two transverse components of the spin torque is due to the precession of the electron spins around the exchange field in the FM layer. In absence of applied bias and for a relatively thin barrier the perpendicular component of the spin torque to the interface is non-zero due to the exchange coupling between the FM layers across the barrier.

cond-mat.other↗

arXiv2004

Current perpendicular to plane Giant Magnetoresistance (GMR) in laminated nanostructures

We theoretically studied spin dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of GMR. This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones despite lamination induces a significant increase in CPP resistance.

cond-mat.mtrl-sci↗

arXiv2004

Density of states in spin-valve structure with superconducting electrodes

Energy variation of the density of states (DOS) has been calculated in the superconductor/ferromagnet/ferromagnet/superconductor structure (SFFS) in the frame of Gorkov equations taking into account the s-d electron scattering in the ferromagnetic layers. DOS behavior is presented for the antiparallel and parallel magnetic moments alignment of two adjacent F layers. The cases of small and large values of exchange ferromagnetic field are discussed.

cond-mat.other↗

arXiv2004

Magnetic tunnel junctions with impurities

The influence of impurities, embedded into the isolating spacer (I) between two ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance (TMR), is theoretically investigated. It is shown, that the current and TMR are strongly enhanced in the vicinity of the impurity under the condition that the energy of the electron's bound state on the impurity is close to the Fermi energy. If the position of the impurity inside the barrier is asymmetric, e.g. closer to the one of the interfaces F/I the I-V curve exhibits quasidiode behavior.

cond-mat.other↗

arXiv2004

Influence of s-d scattering on the electron density of states in ferromagnet/superconductor bilayer

We study the dependence of the electronic density of states (DOS) on the distance from the boundary for a ferromagnet/superconductor bilayer. We calculate the electron density of states in such structure taking into account the two-band model of the ferromagnet (FM) with conducting s and localized d electrons and a simple s-wave superconductor (SC). It is demonstrated that due to the electron s-d scattering in the ferromagnetic layer in the third order of s-d scattering parameter the oscillation of the density of states has larger period and more drastic decrease in comparison with the oscillation period for the electron density of states in the zero order.

cond-mat.other↗

arXiv2004

Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWS) which depends on the impurity potential, impurity position and the symmetry of the QWS.

cond-mat.mtrl-sci↗

arXiv2004

Resonance magneto-resistance in double barrier structure with spin-valve

The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant tunnelling, due to the quantum well states of the electron confined between two barriers, sharply depends on the mutual orientation of the magnetizations of ferromagnetic layers F. The calculated optimistic value of TMR exceeds 2000% .

cond-mat↗

arXiv2003

Theory of proximity effect in superconductor/ferromagnet heterostructures

We present a microscopic theory of proximity effect in the ferromagnet/superconductor/ferromagnet (F/S/F) nanostructures where S is s-wave low-T_c superconductor and F's are layers of 3d transition ferromagnetic metal. Our approach is based on the solution of Gor'kov equations for the normal and anomalous Green's functions together with a self-consistent evaluation of the superconducting order parameter. We take into account the elastic spin-conserving scattering of the electrons assuming s-wave scattering in the S layer and s-d scattering in the F layers. In accordance with the previous quasiclassical theories, we found that due to exchange field in the ferromagnet the anomalous Green's function F(z) exhibits the damping oscillations in the F-layer as a function of distance z from the S/F interface. In the given model a half of period of oscillations is determined by the length ξ_m^0 = πv_F/E_ex, where v_F is the Fermi velocity and E_ex is the exchange field, while damping is governed by the length l_0 = (1/l_{\uparrow} + 1/l_{\downarrow})^{-1} with l_{\uparrow} and l_{\downarrow} being spin-dependent mean free paths in the ferromagnet. The superconducting transition temperature T_c(d_F) of the F/S/F trilayer shows the damping oscillations as a function of the F-layer thickness d_F with period ξ_F = π/\sqrt{m E_ex}, where m is the effective electron mass. We show that strong spin-conserving scattering either in the superconductor or in the ferromagnet significantly suppresses these oscillations. The calculated T_c(d_F) dependences are compared with existing experimental data for Fe/Nb/Fe trilayers and Nb/Co multilayers.

cond-mat.supr-con↗

arXiv2001

Magnetic Diode Effect in Double Barrier Tunnel Junctions

A quantum statistical theory of spin-dependent tunneling through asymmetric magnetic double barrier junctions is presented which describes $both$ ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the key parameter for the transition between these two tunneling regimes is the electron scattering. For these junctions a strong asymmetric behaviour in the I-V characteristics and the tunnel magnetoresistance (TMR) is predicted which can be controlled by an applied magnetic field. This phenomenon relates to the quantum well states in the middle metallic layer. The corresponding resonances in the current and the TMR are drastically phase shifted under positive and negative voltage.

cond-mat.mtrl-sci↗