arXiv subjects

A. Weichselbaum

Publications and source records attributed to A. Weichselbaum.

27 records · Page 2Linked to original sources

arXiv2008

Variational matrix product state approach to quantum impurity models

We present a unified framework for renormalization group methods, including Wilson's numerical renormalization group (NRG) and White's density-matrix renormalization group (DMRG), within the language of matrix product states. This allows improvements over Wilson's NRG for quantum impurity models, as we illustrate for the one-channel Kondo model. Moreover, we use a variational method for evaluating Green's functions. The proposed method is more flexible in its description of spectral properties at finite frequencies, opening the way to time-dependent, out-of-equilibrium impurity problems. It also substantially improves computational efficiency for one-channel impurity problems, suggesting potentially \emph{linear} scaling of complexity for $n$-channel problems.

cond-mat.str-el↗

arXiv2008

Realistic modelling of quantum point contacts subject to high magnetic fields and with current bias at out of linear response regime

The electron and current density distributions in the close proximity of quantum point contacts (QPCs) are investigated. A three dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the (deeply) etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the non-linear regime.

cond-mat.mes-hall↗

arXiv2007

Mesoscopic to universal crossover of transmission phase of multi-level quantum dots

Transmission phase αmeasurements of many-electron quantum dots (small mean level spacing δ) revealed universal phase lapses by πbetween consecutive resonances. In contrast, for dots with only a few electrons (large δ), the appearance or not of a phase lapse depends on the dot parameters. We show that a model of a multi-level quantum dot with local Coulomb interactions and arbitrary level-lead couplings reproduces the generic features of the observed behavior. The universal behavior of αfor small δfollows from Fano-type antiresonances of the renormalized single-particle levels.

cond-mat.mes-hall↗

arXiv2006

Phase lapses in transmission through interacting two-level quantum dots

We investigate the appearance of pi lapses in the transmission phase theta of a two-level quantum dot with Coulomb interaction U. Using the numerical and functional renormalization group methods we study the entire parameter space for spin-polarized as well as spin-degenerate dots, modeled by spinless or spinful electrons, respectively. We investigate the effect of finite temperatures T. For small T and sufficiently small single-particle spacings delta of the dot levels we find pi phase lapses between two transmission peaks in an overwhelming part of the parameter space of the level-lead couplings. For large delta the appearance or not of a phase lapse between resonances depends on the relative sign of the level-lead couplings in analogy to the U=0 case. We show that this generic scenario is the same for spin-polarized and spin-degenerate dots. We emphasize that in contrast to dots with more levels, for a two-level dot with small delta and generic dot-lead couplings (that is up to cases with special symmetry) the "universal" phase lapse behavior is already established at U=0. The most important effect of the Coulomb interaction is to increase the separation of the transmission resonances. The relation of the appearance of phase lapses to the inversion of the population of the dot levels is discussed. For the spin-polarized case and low temperatures we compare our results to recent mean-field studies. For small delta correlations are found to strongly alter the mean-field picture.

cond-mat.mes-hall↗

arXiv2006

Tunability of qubit Coulomb interaction: Numerical analysis of top gate depletion in two-dimensional electron systems

We investigate the tunability of electrostatic coupling between solid state quantum dots as building blocks for quantum bits. Specifically, our analysis is based upon two-dimensional electron systems (2DEG) and depletion by top gates. We are interested in whether the Coulomb interaction between qubits can be tuned by electrical means using screening effects. The systems under investigation are analyzed numerically solving the Poisson equation in 3D via relaxation techniques with optimized algorithms for an extended set of boundary conditions. These include an open outer boundary, simulation of 2DEG systems and dielectric boundaries like the surface of a physical sample. The results show that for currently lithographically available feature sizes, the Coulomb interaction between the quantum bits is weak in general due to efficient screening in the planar geometry of 2DEG and top gates. The evaluated values are on the order of 1 $μ$eV. Moreover, while it is not possible to turn off the qubit interaction completely, an effective tunability on the order of 50% is clearly realizable while maintaining an intact quantum bit structure.

cond-mat.mes-hall↗

arXiv2004

Spatially resolved manipulation of single electrons in quantum dots using a scanned probe

The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potential between the tip and individual electronic quantum dot states. Under certain conditions this interaction is found to contain a tip-voltage induced and a tip-voltage independent contribution.

cond-mat.mes-hall↗

arXiv2004

Aharonov-Bohm phase as quantum gate in two-electron charge qubits

We analyze the singlet-triplet splitting on a planar array of quantum dots coupled capacitively to a set of external voltage gates. The system is modelled using an extended Hubbard Hamiltonian keeping two excess electrons on the array. The voltage dependence of the low-energy singlet and triplet states is analyzed using the Feshbach formalism. The formation of a well decoupled two-level system in the ground state is shown to rely on the fact of having two particles in the system. Coherent operation of the array is studied with respect to single quantum bit operations. One quantum gate is implemented via voltage controls, while for the necessary second quantum gate, a uniform external magnetic field is introduced. The Aharonov-Bohm phases on the closed loop tunnel connections in the array are used to effectively suppress the tunneling, despite a constant tunneling amplitude in the structure. This allows one to completely stall the qubit in any arbitrary quantum superposition, providing full control of this interesting quantum system.

cond-mat.mes-hall↗

arXiv2004

Charge qubits and limitations of electrostatic quantum gates

We investigate the characteristics of purely electrostatic interactions with external gates in constructing full single qubit manipulations. The quantum bit is naturally encoded in the spatial wave function of the electron system. Single-electron{transistor arrays based on quantum dots or insulating interfaces typically allow for electrostatic controls where the inter-island tunneling is considered constant, e.g. determined by the thickness of an insulating layer. A representative array of 3x3 quantum dots with two mobile electrons is analyzed using a Hubbard Hamiltonian and a capacitance matrix formalism. Our study shows that it is easy to realize the first quantum gate for single qubit operations, but that a second quantum gate only comes at the cost of compromising the low-energy two-level system needed to encode the qubit. We use perturbative arguments and the Feshbach formalism to show that the compromising of the two-level system is a rather general feature for electrostatically interacting qubits and is not just related to the specific details of the system chosen. We show further that full implementation requires tunable tunneling or external magnetic fields.

cond-mat.mes-hall↗

arXiv2003

Potential landscapes and induced charges near metallic islands in three dimensions

We calculate electrostatic potential landscapes for an external probe charge in the presence of a set of metallic islands. Our numerical calculation in three dimensions (3D)uses an efficient grid relaxation technique. The well-known relaxation algorithm for solving the Poisson equation in two dimensions is generalized to 3D. In addition,all charges on the system, free as well as induced charges,are determined accurately and self-consistently to satisfy the desired boundary conditions. This allows the straightforward calculation of the potential on the outer boundary using the free space electrostatic Green's function,as well as the calculation of the entire capacitance matrix of the system. Physically interesting examples of nanoscale systems are presented and analyzed.

cond-mat.mes-hall↗