arXiv subjects

A. Zimmers

Publications and source records attributed to A. Zimmers.

At least 19 recordsLinked to original sources

arXiv2025

Accurate prediction of macroscopic transport from microscopic imaging via critical fractals at the Mott transition

Vanadium dioxide (VO$_2$) exhibits hysteresis in resistance while undergoing a thermally driven insulator-metal transition (IMT). Understanding the nonequilibrium effects in resistance is of great interest, as VO$_2$ is a strong candidate for brain-inspired computing, which is more energy efficient for AI tasks compared to traditional computing. Accurate models of the connection between microscopic and macroscopic transport properties and microscopic imaging of VO$_2$ will allow us to better utilize VO$_2$ in future applications. However, predictions of macroscopic resistance of VO$_2$ that quantitatively match observations using spatially resolved data have not yet been achieved. Here, we demonstrate an accurate prediction of the macroscopic resistance of VO$_2$ throughout the entire temperature range of interest, by developing a multiscale resistor network model incorporating the assumption of fractal sub-pixel structure of the optical data, where the configuration of insulating and metallic domains within each pixel are drawn from the random field Ising model near criticality. This strongly indicates that the observed fractal, power law structure of metallic and insulating domains extends down to much smaller length scales than the current record for experimental resolution of this system, and that the two-dimensional random field Ising model near criticality is a suitable model for describing the metal and insulator patches of VO$_2$ down to scales that approach the unit cell.

cond-mat.str-el↗

arXiv2025

Effects of Interactions and Defect Motion on Ramp Reversal Memory in Locally Phase Separated Materials

The ramp-reversal memory (RRM) effect in metal-insulator transition metal oxides (TMOs), a non-volatile resistance change induced by repeated temperature cycling, has attracted considerable interest in neuromorphic computing and non-volatile memory devices. Our previously introduced defect motion model successfully explained RRM in vanadium dioxide (VO$_2$), capturing observed critical temperature shifts and memory accumulation throughout the sample. However, this approach lacked interactions between metallic and insulating domains, whereas the RRM only appears when TMOs are brought into the metal-insulator coexistence regime. Here, we extend our model by combining the Random Field Ising Model with defect diffusion-segregation, thereby enabling accurate hysteresis modeling while predicting the relationship between RRM and domain interactions. Our simulations demonstrate that maximum RRM occurs when the turnaround temperature approaches the warming branch inflection point, consistent with experimental observations on VO$_2$. Most significantly, we find that increasing nearest-neighbor interactions enhances the maximum memory effect, thus providing a clear mechanism for optimizing RRM performance. Since our model employs minimal assumptions, we predict that RRM should be a widespread phenomenon in materials exhibiting patterned phase coexistence of electronic domains. This work not only advances fundamental understanding of memory behavior in TMOs but also establishes a much-needed theoretical framework for optimizing device applications.

cond-mat.mtrl-sci↗

arXiv2022

Deep Learning Hamiltonians from Disordered Image Data in Quantum Materials

The capabilities of image probe experiments are rapidly expanding, providing new information about quantum materials on unprecedented length and time scales. Many such materials feature inhomogeneous electronic properties with intricate pattern formation on the observable surface. This rich spatial structure contains information about interactions, dimensionality, and disorder -- a spatial encoding of the Hamiltonian driving the pattern formation. Image recognition techniques from machine learning are an excellent tool for interpreting information encoded in the spatial relationships in such images. Here, we develop a deep learning framework for using the rich information available in these spatial correlations in order to discover the underlying Hamiltonian driving the patterns. We first vet the method on a known case, scanning near-field optical microscopy on a thin film of VO2. We then apply our trained convolutional neural network architecture to new optical microscope images of a different VO2 film as it goes through the metal-insulator transition. We find that a two-dimensional Hamiltonian with both interactions and random field disorder is required to explain the intricate, fractal intertwining of metal and insulator domains during the transition. This detailed knowledge about the underlying Hamiltonian paves the way to using the model to control the pattern formation via, e.g., tailored hysteresis protocols. We also introduce a distribution-based confidence measure on the results of a multi-label classifier, which does not rely on adversarial training. In addition, we propose a new machine learning based criterion for diagnosing a physical system's proximity to criticality.

cond-mat.str-el↗

arXiv2015

Effects of electron-phonon interactions on the electron tunneling spectrum of PbS quantum dots

We present a tunnel spectroscopy study of single PbS Quantum Dots (QDs) as function of temperature and gate voltage. Three distinct signatures of strong electron-phonon coupling are observed in the Electron Tunneling Spectrum (ETS) of these QDs. In the shell-filling regime, the $8\times$ degeneracy of the electronic levels is lifted by the Coulomb interactions and allows the observation of phonon sub-bands that result from the emission of optical phonons. At low bias, a gap is observed in the ETS that cannot be closed with the gate voltage, which is a distinguishing feature of the Franck-Condon (FC) blockade. From the data, a Huang-Rhys factor in the range $S\sim 1.7 - 2.5$ is obtained. Finally, in the shell tunneling regime, the optical phonons appear in the inelastic ETS $d^2I/dV^2$.

cond-mat.mes-hall↗

arXiv2014

Verwey transition in single magnetite nanoparticles

We present a tunnel spectroscopy study of the electronic spectrum of single magnetite \chemform{Fe_3O_4} nanoparticles trapped between nanometer-spaced electrodes. The Verwey transition is clearly identified in the current voltage-characteristics where we find that the transition temperature is electric field dependent. The data show the presence of localized states at high energy, $\varepsilon \sim 0.6eV$, which can be attributed to polaron states. At low energy, the density of states (DOS) is suppressed at the approach of the Verwey transition. Below the Verwey transition, a gap, $Δ\sim 300meV$, is observed in the spectrum. In contrast, no gap is observed in the high temperature phase, implying that electronic transport in this phase is possibly due to polaron hopping with activated mobility.

cond-mat.mes-hall↗

arXiv2012

Electric-field-driven phase transition in vanadium dioxide

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E~6.5\times10^7 Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

cond-mat.str-el↗

arXiv2011

Electron cotunneling transport in gold nanocrystal arrays

We describe current-voltage characteristics I(V) of alkyl-ligated gold nanocrystals $\sim 5 nm$ arrays in long screening length limit. Arrays with different alkyl ligand lengths have been prepared to tune the electronic tunnel coupling between the nanocrystals. For long ligands, electronic diffusion occurs through sequential tunneling and follows activated laws, as function of temperature $σ\propto e^{-T_0/T}$ and as function of electric field $I \propto e^{-\mathcal{E}_0/\mathcal{E}}$. For better conducting arrays, i.e. with small ligands, the transport properties crossover to the cotunneling regime and follows Efros-Shklovskii laws as function of temperature $σ\propto e^{-(T_{ES}/T)^{1/2}}$ and as function of electric field $I \propto e^{-(\mathcal{E}_{ES}/\mathcal{E})^{1/2}}$. The data shows that electronic transport in nanocrystal arrays can be tuned from the sequential tunneling to the cotunneling regime by increasing the tunnel barrier transparency.

cond-mat.str-el↗

arXiv2009

Direct observation of electronic inhomogeneities induced by point defect disorder in manganite films

We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed though conductive atomic force microscopy (CAFM). CAFM images show electronic inhomogeneities in the samples with different physical properties due to spatial fluctuations in the point defect distribution. As disorder increases, the distance between conducting regions increases and the metal-insulator transition shifts to lower temperatures. Transport properties in these systems can be interpreted in terms of a percolative model. The samples saturation magnetization decreases as the irradiation dose increases whereas the Curie temperature remains unchanged.

cond-mat.mtrl-sci↗

arXiv2009

Influence of ion implantation on the magnetic and transport properties of manganite films

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low field magnetoresistance was found. Point defect disorder decreases the system magnetization but doesn t seem to change the magnetic transition temperature. As a consequence, an important decoupling between the magnetic and the metal-insulator transition is found for ion irradiated films as opposed to the classical double exchange model scenario.

cond-mat.mtrl-sci↗

arXiv2009

Anisotropic dressing of charge-carriers in the electron-doped cuprate superconductor Sm(1.85)Ce(0.15)CuO(4) from angle-resolved photoemission measurements

Angle-resolved photoemission measurements on the electron-doped cuprate Sm(1.85)Ce(0.15)CuO(4) evidence anisotropic dressing of charge-carriers due to many-body interactions. Most significantly, the scattering rate along the zone boundary saturates for binding energies larger than ~200 meV, while along the diagonal direction it increases nearly linearly with the binding energy in the energy range ~150-500 meV. These results indicate that many-body interactions along the diagonal direction are strong down to the bottom of the band, while along the zone-bounday they become very weak at energies above ~200 meV.

cond-mat.supr-con↗

arXiv2007

Local tunneling spectroscopy of the electron-doped cuprate Sm1.85Ce0.15CuO4

We present local tunneling spectroscopy in the optimally electron-doped cuprate Sm2-xCexCuO4 x=0.15. A clear signature of the superconducting gap is observed with an amplitude ranging from place to place and from sample to sample (Delta~3.5-6meV). Another spectroscopic feature is simultaneously observed at high energy above \pm 50meV. Its energy scale and temperature evolution is found to be compatible with previous photoemission and optical experiments. If interpreted as the signature of antiferromagnetic order in the samples, these results could suggest the coexistence on the local scale of antiferromagnetism and superconductivity on the electron-doped side of cuprate superconductors.

cond-mat.supr-con↗

arXiv2006

Infrared Hall Effect in the electron-doped high Tc cuprate Pr(2-x)Ce(x)CuO(4)

The electron-doped cuprate Pr(2-x)Ce(x)CuO(4) is investigated using infrared magneto-optical measurements. The optical Hall conductivity sigma_{xy} shows a strong doping, frequency and temperature dependence consistent with the presence of a temperature and doping-dependent coherent backscattering amplitude which doubles the electronic unit cell. The data suggest that the coherent backscattering vanishes at a quantum critical point inside the superconducting dome and is associated with the commensurate antiferromagnetic order observed by other workers. Using a spectral weight analysis we have further investigated the Fermi-liquid like behavior of the overdoped sample. The observed Hall-conductance spectral weight is about 10 times less than that predicted by band theory, raising the fundamental question concerning the effect of Mott and antiferromagnetic correlations on the Hall conductance of strongly correlated materials.

cond-mat.supr-con↗

arXiv2006

Optical determination of the superconducting energy gap in electron-doped Pr_{1.85}Ce_{0.15}CuO_4

The optical properties of single crystal Pr_{1.85}Ce_{0.15}CuO_4 have been measured over a wide frequency range above and below the critical temperature (T_c \simeq 20 K). In the normal state the coherent part of the conductivity is described by the Drude model, from which the scattering rate just above T_c is determined to be 1/τ\simeq 80 cm^{-1}. The condition that \hbar/τ\approx 2k_B T near T_c appears to be a general result in many of the cuprate superconductors. Below T_c the formation of a superconducting energy gap is clearly visible in the reflectance, from which the gap maximum is estimated to be Δ_0 \simeq 35 cm^{-1} (4.3 meV). The ability to observe the superconducting energy gap in the optical properties favors the nonmonotonic over the monotonic description of the d-wave gap. The penetration depth for T\ll T_c is λ\simeq 2000 Å, which when taken with the estimated value for the dc conductivity just above T_c of σ_{dc} \simeq 35 \times 10^3 Ω^{-1}cm^{-1} places this material on the general scaling line for the cuprates defined by 1/λ^2 \propto σ_{dc}(T\simeq T_c) \times T_c. This result is consistent with the observation that 1/τ\approx 2Δ_0, which implies that the material is not in the clean limit.

cond-mat.supr-con↗

arXiv2006

Infrared Hall conductivity of Na$_{0.7}$CoO$_2$

We report infrared Hall conductivity $σ_{xy}(ω)$ of Na$_{0.7}$CoO$_2$ thin films determined from Faraday rotation angle $θ_{F}$ measurements. $σ_{xy}(ω)$ exhibits two types of hole conduction, Drude and incoherent carriers. The coherent Drude carrier shows a large renormalized mass and Fermi liquid-like behavior of Hall scattering rate, $γ_{H} \sim aT^{2}$. The spectral weight is suppressed and disappears at T = 120K. The incoherent carrier response is centered at mid-IR frequency and shifts to lower energy with increasing T. Infrared Hall constant is positive and almost independent of temperature in sharp contrast with the dc-Hall constant.

cond-mat.str-el↗

arXiv2006

Temperature dependence of the spectral weight in p- and n-type cuprates: a study of normal state partial gaps and electronic kinetic energy

The optical conductivity of CuO2 (copper-oxygen) planes in p- and n-type cuprates thin films at various doping levels is deduced from highly accurate reflectivity data. The temperature dependence of the real part sigma1(omega) of this optical conductivity and the corresponding spectral weight allow to track the opening of a partial gap in the normal state of n-type Pr{2-x}Ce(x)CuO4 (PCCO), but not of p-type Bi2Sr2CaCu2O(8+delta} (BSCCO) cuprates. This is a clear difference between these two families of cuprates, which we briefly discuss. In BSCCO, the change of the electronic kinetic energy Ekin - deduced from the spectral weight- at the superconducting transition is found to cross over from a conventional BCS behavior (increase of Ekin below Tc to an unconventional behavior (decrease of Ekin below Tc) as the free carrier density decreases. This behavior appears to be linked to the energy scale over which spectral weight is lost and goes into the superfluid condensate, hence may be related to Mott physics.

cond-mat.supr-con↗

arXiv2004

On the optical conductivity of Electron-Doped Cuprates I: Mott Physics

The doping and temperature dependent conductivity of electron-doped cuprates is analysed. The variation of kinetic energy with doping is shown to imply that the materials are approximately as strongly correlated as the hole-doped materials. The optical spectrum is fit to a quasiparticle scattering model; while the model fits the optical data well, gross inconsistencies with photoemission data are found, implying the presence of a large, strongly doping dependent Landau parameter.

cond-mat.str-el↗

arXiv2004

Infrared Properties of Electron Doped Cuprates: Tracking Normal State Gaps and Quantum Critical Behavior in Pr(2-x)Ce(x)CuO(4)

We report the temperature dependence of the infrared-visible conductivity of Pr(2-x)Ce(x)CuO(4) thin films. When varying the doping from a non-superconducting film (x = 0.11) to a superconducting overdoped film (x = 0.17), we observe, up to optimal doping (x = 0.15), a partial gap opening. A model combining a spin density wave gap and a frequency and temperature dependent self energy reproduces our data reasonably well. The magnitude of this gap extrapolates to zero for x ~ 0.17 indicating the coexistence of magnetism and superconductivity in this material and the existence of a quantum critical point at this Ce concentration.

cond-mat.supr-con↗

arXiv2004

Infrared Signature of the Superconducting State in Pr(2-x)Ce(x)CuO(4)

We measured the far infrared reflectivity of two superconducting Pr(2-x)Ce(x)CuO(4) films above and below Tc. The reflectivity in the superconducting state increases and the optical conductivity drops at low energies, in agreement with the opening of a (possibly) anisotropic superconducting gap. The maximum energy of the gap scales roughly with Tc as 2 Delta_{max} / kB Tc ~ 4.7. We determined absolute values of the penetration depth at 5 K as lambda_{ab} = (3300 +/- 700) A for x = 0.15 and lambda_{ab} = (2000 +/- 300) A for x = 0.17. A spectral weight analysis shows that the Ferrell-Glover-Tinkham sum rule is satisfied at conventional low energy scales \~ 4 Delta_{max}.

cond-mat.supr-con↗