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Aaron H. Barajas-Aguilar

Publications and source records attributed to Aaron H. Barajas-Aguilar.

3 recordsLinked to original sources

Electrostatic Gating of Ionic Conductance Through Heterogeneous van der Waals Nanopores

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at sub millimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub 10 nm nanopores drilled in van der Waals (vdW) heterostructures with internal gate electrodes made of few layer graphene. These devices deliver up to 10fold current modulation at gate voltages as low as 0.3 V in 10 mM KCl, and 2fold modulation at near physiological 100 mM KCl. Baseline conductance with no gate shows surface charge dominated transport below 100 mM KCl consistent with negatively charged hBN walls and 5 nm opening of the pores. The surface charge and the electrochemical asymmetry introduced by the three electrode configuration govern the device behavior: negative gate voltage (VG) enriches ionic concentrations and enhances current, whereas positive VG induces a local depletion zone that suppresses transport. The current modulation by VG is dependent on the polarity of the transmembrane potential and leads to ion current rectification. Molecular dynamics simulations of a nanopore in a hBN graphene hBN stack reveal confinement and surface charge dependent suppression of relative permittivity of interfacial water. Continuum modeling with radially varying interfacial water permittivity reproduces the asymmetric IV characteristics and explains how the embedded gate sculpts local potential and ion concentrations. By enabling sub 0.5 V control of ionic transport at up to 100 mM salt concentrations, these devices address a key barrier in nanofluidics and open the pathway to low power ionic circuits and biosensing.

cond-mat.mtrl-sci↗

Electrically-driven amplification of terahertz acoustic waves in graphene

In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under this condition, the electronic system can efficiently amplify acoustic phonons, leading to the exponential growth of sound waves in the direction of the carrier flow. Here, we demonstrate that such phonon amplification can significantly modify the electrical properties of graphene devices. We observe a super-linear growth of the resistivity in the direction of the carrier flow when the drift velocity exceeds the speed of sound, causing up to a 7 times increase over 8 micrometers. The resistance growth is observable for carrier densities away from the Dirac point and is enhanced at cryogenic temperatures. These observations are explained by a theoretical model for the electrical-amplification of acoustic phonons, which reach frequencies up to 2.2 terahertz with the nanoscale wavelength set by gate-tunable ~kF transitions across the Fermi surface. These findings offer a route to high-frequency on-chip sound generation and detection, which can be used to modulate and probe electronic physics in van der Waals heterostructures in the terahertz frequency range.

cond-mat.mes-hall↗

Mechanically-reconfigurable van der Waals devices via low-friction gold sliding

Interfaces of van der Waals (vdW) materials such as graphite and hexagonal boron nitride (hBN) exhibit low-friction sliding due to their atomically-flat surfaces and weak vdW bonding. We demonstrate that microfabricated gold also slides with low friction on hBN. This enables the arbitrary post-fabrication repositioning of device features both at ambient conditions as well as in-situ to a measurement cryostat. We demonstrate mechanically-reconfigurable vdW devices where device geometry and position are continuously-tunable parameters. By fabricating slidable top gates on a graphene-hBN device, we produce a mechanically-tunable quantum point contact where electron confinement and edge-state coupling can be continuously modified. Moreover, we combine in-situ sliding with simultaneous electronic measurements to create new types of scanning probe experiments, where gate electrodes and even entire vdW heterostructures devices can be spatially scanned by sliding across a target.

cond-mat.mes-hall↗