arXiv subjects

Aaron M. Lindenberg

Publications and source records attributed to Aaron M. Lindenberg.

32 records · Page 2Linked to original sources

arXiv2022

Pulsed Laser Ejection of Single-Crystalline III-V Solar Cells From GaAs Substrates

Like many optoelectronics, the highest quality III-V solar cells start out as thin single-crystalline multilayers on GaAs substrates. Separating these device layers from their growth substrate enables higher performing devices and wafer reuse, both of which are critical for III-V solar cell viability in a terrestrial market. Here, we remove rigidly-bonded, lattice-matched, 16 mm$^2$ x 3.5 um thick GaAs devices off a GaAs substrate using a 10 ns, unfocused Nd:YAG laser pulse. The pulse is selectively absorbed in a lower-bandgap, lattice-matched, crystalline layer below the device, driving a quasi-two dimensional ablation event that ejects the crystalline multilayer from the substrate. After minutes of selective wet-chemical etching and front contact deposition, our champion 0.1 cm$^2$ device showed a (17.4 +/- 0.5) % power conversion efficiency and an open-circuit voltage of 1.07 V, using AM1.5 direct (1000 W m$^{-2}$) with no anti-reflection coating. We show that the performance is comparable to similar solar cells produced via conventional substrate dissolution processes. We discuss unique process characteristics and opportunities, such as the potential to separate wafer-sized thin film solar cells per laser pulse.

cond-mat.mtrl-sci↗

arXiv2022

The Persistence of Memory in Ionic Conduction Probed by Nonlinear Optics

Predicting practical rates of ion transport from atomistic descriptors enables the rational design of materials, devices, and processes, which is especially critical to developing low-carbon energy technologies such as rechargeable batteries. The correlated mechanisms of ionic conduction, variation of conductivity with timescale and confinement, and ambiguity in the vibrational origin of translation, the attempt frequency, call for a direct atomic probe of the most fundamental steps of ionic diffusion: ion hops. However, such hops are rare-event large-amplitude translations, and are challenging to excite and detect. Here we use single-cycle terahertz pumps to impulsively trigger ionic hopping in battery solid electrolytes. This is visualized by an induced transient birefringence enabling direct probing of anisotropy in ionic hopping on the picosecond timescale. The relaxation of the transient signal measures the decay of orientational memory, and the production of entropy in diffusion. We extend experimental results using in silico transient birefringence to identify attempt frequencies for ion hopping. Using nonlinear optical methods, we probe ion transport at its fastest limit, distinguish correlated conduction mechanisms from a true random walk at the atomic scale, and demonstrate the connection between activated transport and the thermodynamics of information.

cond-mat.mtrl-sci↗

arXiv2022

Large Itinerant Electron Exchange Coupling in the Magnetic Topological Insulator MnBi2Te4

Magnetism in topological materials creates phases exhibiting quantized transport phenomena with applications in spintronics and quantum information. The emergence of such phases relies on strong interaction between localized spins and itinerant states comprising the topological bands, and the subsequent formation of an exchange gap. However, this interaction has never been measured in any intrinsic magnetic topological material. Using a multimodal approach, this exchange interaction is measured in MnBi2Te4, the first realized intrinsic magnetic topological insulator. Interrogating nonequilibrium spin dynamics, itinerant bands are found to exhibit a strong exchange coupling to localized Mn spins. Momentum-resolved ultrafast electron scattering and magneto-optic measurements reveal that itinerant spins disorder via electron-phonon scattering at picosecond timescales. Localized Mn spins, probed by resonant X-ray scattering, disorder concurrently with itinerant spins, despite being energetically decoupled from the initial excitation. Modeling the results using atomistic simulations, the exchange coupling between localized and itinerant spins is estimated to be >100 times larger than superexchange interactions. This implies an exchange gap of >25 meV should occur in the topological surface states. By directly quantifying local-itinerant exchange coupling, this work validates the materials-by-design strategy of utilizing localized magnetic order to create and manipulate magnetic topological phases, from static to ultrafast timescales.

cond-mat.mtrl-sci↗

arXiv2021

Observation of a Novel Lattice Instability in Ultrafast Photoexcited SnSe

There is growing interest in using ultrafast light pulses to drive functional materials into nonequilibrium states with novel properties. The conventional wisdom is that above gap photoexcitation behaves similarly to raising the electronic temperature and lacks the desired selectivity in the final state. Here we report a novel nonthermal lattice instability induced by ultrafast above-gap excitation in SnSe, a representative of the IV-VI class of semiconductors that provides a rich platform for tuning material functionality with ultrafast pulses due to their multiple lattice instabilities. The new lattice instability is accompanied by a drastic softening of the lowest frequency A$_g$ phonon. This mode has previously been identified as the soft mode in the thermally driven phase transition to a Cmcm structure. However, by a quantitative reconstruction of the atomic displacements from time-resolved x-ray diffraction for multiple Bragg peaks and excitation densities, we show that ultrafast photoexcitation with near-infrared (1.55 eV) light, induces a distortion towards a different structure with Immm symmetry. The Immm structure of SnSe is an orthorhombic distortion of the rocksalt structure and does not occur in equilibrium. Density functional theory (DFT) calculations reveal that the photoinduced Immm lattice instability arises from electron excitation from the Se 4$p$- and Sn 5$s$-derived bands deep below the Fermi level that cannot be excited thermally. The results have implications for optical control of the thermoelectric, ferroelectric and topological properties of the monochalcogenides and related materials. More generally, the results emphasize the need for ultrafast structural probes to reveal distinct atomic-scale dynamics that are otherwise too subtle or invisible in conventional spectroscopies.

cond-mat.mtrl-sci↗

arXiv2021

Interlayer magnetophononic coupling in MnBi2Te4

The emergence of magnetism in quantum materials creates a platform to realize spin-based applications in spintronics, magnetic memory, and quantum information science. A key to unlocking new functionalities in these materials is the discovery of tunable coupling between spins and other microscopic degrees of freedom. We present evidence for interlayer magnetophononic coupling in the layered magnetic topological insulator MnBi2Te4. Employing magneto-Raman spectroscopy, we observe anomalies in phonon scattering intensities across magnetic field-driven phase transitions, despite the absence of discernible static structural changes. This behavior is a consequence of a magnetophononic wave-mixing process that allows for the excitation of zone-boundary phonons that are otherwise 'forbidden' by momentum conservation. Our microscopic model based on density functional theory calculations reveals that this phenomenon can be attributed to phonons modulating the interlayer exchange coupling. Moreover, signatures of magnetophononic coupling are also observed in the time domain through the ultrafast excitation and detection of coherent phonons across magnetic transitions. In light of the intimate connection between magnetism and topology in MnBi2Te4, the magnetophononic coupling represents an important step towards coherent on-demand manipulation of magnetic topological phases.

cond-mat.mtrl-sci↗

arXiv2021

Defect-Driven Anomalous Transport in Fast-Ion Conducting Solid Electrolytes

Solid-state ionic conduction is a key enabler of electrochemical energy storage and conversion. The mechanistic connections between material processing, defect chemistry, transport dynamics, and practical performance are of considerable importance, but remain incomplete. Here, inspired by studies of fluids and biophysical systems, we re-examine anomalous diffusion in the iconic two-dimensional fast-ion conductors, the $β$- and $β^{\prime\prime}$-aluminas. Using large-scale simulations, we reproduce the frequency dependence of alternating-current ionic conductivity data. We show how the distribution of charge-compensating defects, modulated by processing, drives static and dynamic disorder, which lead to persistent sub-diffusive ion transport at macroscopic timescales. We deconvolute the effects of repulsions between mobile ions, the attraction between the mobile ions and charge-compensating defects, and geometric crowding on ionic conductivity. Our quantitative framework based on these model solid electrolytes connects their atomistic defect chemistry to macroscopic performance with minimal assumptions and enables mechanism-driven 'atoms-to-device' optimization of fast-ion conductors.

cond-mat.mtrl-sci↗

arXiv2021

Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction

Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition is crucial for uncovering the fundamental limits of device operation. Using stroboscopic electron diffraction, we perform synchronized time-resolved measurements of atomic motions and electronic transport in operating vanadium dioxide switches. We discover an electrically-triggered, isostructural state that forms transiently on microsecond timescales, stabilized by local heterogeneities and interfacial interactions between the equilibrium phases. This metastable phase bears striking similarity to that formed under photoexcitation within picoseconds, suggesting a universal transformation pathway across eight orders of magnitude of timescale. Our results establish a new route for uncovering non-equilibrium and metastable phases in correlated materials, and open avenues for engineering novel dynamical behavior in nanoelectronics.

cond-mat.mtrl-sci↗

arXiv2021

Subterahertz collective dynamics of polar vortices

The collective dynamics of topological structures have been of great interest from both fundamental and applied perspectives. For example, the studies of dynamical properties of magnetic vortices and skyrmions not only deepened the understanding of many-body physics but also led to potential applications in data processing and storage. Topological structures constructed from electrical polarization rather than spin have recently been realized in ferroelectric superlattices, promising for ultrafast electric-field control of topological orders. However, little is known about the dynamics of such complex extended nanostructures which in turn underlies their functionalities. Using terahertz-field excitation and femtosecond x-ray diffraction measurements, we observe ultrafast collective polarization dynamics that are unique to polar vortices, with orders of magnitude higher frequencies and smaller lateral size than those of experimentally realized magnetic vortices. A previously unseen soft mode, hereafter referred to as a vortexon, emerges as transient arrays of nanoscale circular patterns of atomic displacements, which reverse their vorticity on picosecond time scales. Its frequency is significantly reduced at a critical strain, indicating a condensation of structural dynamics. First-principles-based atomistic calculations and phase-field modeling reveal the microscopic atomic arrangements and frequencies of the vortex modes. The discovery of subterahertz collective dynamics in polar vortices opens up opportunities for applications of electric-field driven data processing in topological structures with ultrahigh speed and density.

cond-mat.mes-hall↗

arXiv2021

Dynamic lattice distortions driven by surface trapping in semiconductor nanocrystals

Nonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in nanocrystals are not understood. Here, femtosecond electron diffraction measurements corroborated by atomistic simulations uncover transient lattice deformations accompanying radiationless electronic processes in semiconductor nanocrystals. Investigation of the excitation energy dependence shows that hot carriers created by a photon energy considerably larger than the bandgap induce structural distortions at nanocrystal surfaces on few picosecond timescales associated with the localization of trapped holes. On the other hand, carriers created by a photon energy close to the bandgap result in transient lattice heating that occurs on a much longer 200 ps timescale, governed by an Auger heating mechanism. Elucidation of the structural deformations associated with the surface trapping of hot holes provides atomic-scale insights into the mechanisms deteriorating optoelectronic performance and a pathway towards minimizing these losses in nanocrystal devices.

cond-mat.mes-hall↗

arXiv2020

Electrochemical Ion Insertion: From Atoms to Devices

Electrochemical ion insertion involves coupled ion-electron transfer reactions, transport of guest species, and redox of the host. The hosts are typically anisotropic solids with two-dimensional conduction planes, but can also be materials with one-dimensional or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage, but also find extensive applications in electrocatalysis, optoelectronics, and computing. Recent developments in operando, ultrafast, and high-resolution characterization methods, as well as accurate theoretical simulation methods, have led to a renaissance in the understanding of ion-insertion compounds. In this Review, we present a unified framework for understanding insertion compounds across time and length scales ranging from atomic to device levels. Using graphite, transition metal dichalcogenides, layered oxides, oxyhydroxides, and olivines as examples, we explore commonalities in these materials in terms of point defects, interfacial reactions, and phase transformations. We illustrate similarities in the operating principles of various ion-insertion devices ranging from batteries and electrocatalysts to electrochromics and thermal transistors, with the goal of unifying research across disciplinary boundaries.

cond-mat.mtrl-sci↗

arXiv2020

Berry curvature memory through electrically driven stacking transitions

In two-dimensional layered quantum materials, the stacking order of the layers determines both the crystalline symmetry and electronic properties such as the Berry curvature, topology and electron correlation. Electrical stimuli can influence quasiparticle interactions and the free-energy landscape, making it possible to dynamically modify the stacking order and reveal hidden structures that host different quantum properties. Here we demonstrate electrically driven stacking transitions that can be applied to design nonvolatile memory based on Berry curvature in few-layer WTe$_2$. The interplay of out-of-plane electric fields and electrostatic doping controls in-plane interlayer sliding and creates multiple polar and centrosymmetric stacking orders. In situ nonlinear Hall transport reveals such stacking rearrangements result in a layer-parity-selective Berry curvature memory in momentum space, where the sign reversal of the Berry curvature and its dipole only occurs in odd-layer crystals. Our findings open an avenue towards exploring coupling between topology, electron correlations, and ferroelectricity in hidden stacking orders and demonstrate a new low-energy-cost, electrically controlled topological memory in the atomically thin limit.

cond-mat.mtrl-sci↗

arXiv2018

Anisotropic structural dynamics of monolayer crystals revealed by femtosecond surface x-ray scattering

X-ray scattering is one of the primary tools to determine crystallographic configuration with atomic accuracy. However, the measurement of ultrafast structural dynamics in monolayer crystals remains a long-standing challenge due to a significant reduction of diffraction volume and complexity of data analysis, prohibiting the application of ultrafast x-ray scattering to study nonequilibrium structural properties at the two-dimensional limit. Here, we demonstrate femtosecond surface x-ray diffraction in combination with crystallographic model-refinement calculations to quantify the ultrafast structural dynamics of monolayer WSe$_2$ crystals supported on a substrate. We found the absorbed optical photon energy is preferably coupled to the in-plane lattice vibrations within 2 picoseconds while the out-of-plane lattice vibration amplitude remains unchanged during the first 10 picoseconds. The model-assisted fitting suggests an asymmetric intralayer spacing change upon excitation. The observed nonequilibrium anisotropic structural dynamics in two-dimensional materials agrees with first-principles nonadiabatic modeling in both real and momentum space, marking the distinct structural dynamics of monolayer crystals from their bulk counterparts. The demonstrated methods unlock the benefit of surface sensitive x-ray scattering to quantitatively measure ultrafast structural dynamics in atomically thin materials and across interfaces.

cond-mat.mtrl-sci↗

arXiv2017

Ultra-fast electric field control of giant electrocaloric effect in ferroelectrics

There is a surge of interest in developing environmentally friendly cooling technology based on the solid--state electrocaloric effect (ECE). Here, we point out that negative ECE with a fast cooling rate ($\approx$10$^{11}$ K/s) can be achieved by driving solid crystals to a high--temperature phase with a properly designed electric field pulse. Specifically, we predict that an ultrafast electric field pulse can cause a negative ECE up to 35 K in PbTiO$_3$ occurring on few picosecond time scales. We acquire and analyze these results by clarifying the mechanism of ECE during an adiabatic irreversible process; In addition to the conventional explanation of the ECE with entropy reallocation, we simply portray the ECE with the concept of internal energy redistribution. Electric field does work on a ferroelectric crystal and redistributes its internal energy. How the kinetic energy is redistributed determines the temperature change and strongly depends on the electric field temporal profile. This concept is supported by our all--atom molecular dynamics simulations of PbTiO$_3$ and BaTiO$_3$. Based on this improved understanding of ECE, we propose strategies for inducing both giant and negative ECE. This work offers a more general framework to understand the ECE and highlights the opportunities of electric--field engineering for controlled design of fast and efficient cooling technology.

cond-mat.mtrl-sci↗

arXiv2015

Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early-stage photovoltaic material

Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measurements of bulk and interface minority-carrier recombination rates in SnS thin films using optical-pump, terahertz (THz)-probe transient photoconductivity (TPC) measurements. Post-growth thermal annealing in H_2S gas increases the minority-carrier lifetime, and oxidation of the surface reduces the surface recombination velocity. However, the minority-carrier lifetime remains below 100 ps for all tested combinations of growth technique and post-growth processing. Significant improvement in SnS solar cell performance will hinge on finding and mitigating as-yet-unknown recombination-active defects. We describe in detail our methodology for TPC experiments, and we share our data analysis routines as freely-available software.

cond-mat.mtrl-sci↗