arXiv subjects

Aaron Pearre

Publications and source records attributed to Aaron Pearre.

3 recordsLinked to original sources

arXiv2026

Evaluating the Structural Basis for Polar Altermagnet Candidate Ca$_{3}$(Ru,Ti)$_{2}$O$_{7}$

The interplay between polar and altermagnetic orders remains largely unexplored in the broader landscape of correlated electron systems. Ca$_{3}$Ru$_{2}$O$_{7}$ has been proposed by density functional theory (DFT) as a polar altermagnet, reliant on the transformation of experimentally reported $Bb2_{1}m$ phase to a lower symmetry $Pn2_{1}a$ structure. Here, we perform a targeted search for the $Pn2_{1}a$ phase using synchrotron X-ray diffraction on single crystals of Ca$_{3}$Ru$_{2}$O$_{7}$ and Ca$_{3}$(Ru$_{0.99}$Ti$_{0.01}$)$_{2}$O$_{7}$. No diffraction signature of the $Pn2_{1}a$ structure is detected down to 20 K within experimental limits of $\sim$60-200 fm atomic displacements, significantly smaller than the DFT prediction of $\sim$1 pm. Combined with recent nonlinear transport measurements, our structural study suggests Ca$_{3}$Ru$_{2}$O$_{7}$ as a unique system where strong electron correlations drive an electronic phase transition without any measurable lattice symmetry change. With Ti substitution exceeding $\sim$3%, a chemically tunable altermagnetic phase with $Bb2_{1}m$ structure emerges. The study highlights the importance of sub-picometer metrology towards de-convolving structural versus electronic origins of altermagnets.

cond-mat.str-el↗

arXiv2026

Anomalous Crystallinity and Magnetism in Chemically Disordered Coherent Heterostructures

High-entropy oxide (HEO) thin films uniquely superimpose exceptional chemical disorder with exceptional crystalline quality and coherence - an intersection we term anomalous crystallinity that arises from coupled structural, chemical, and valence degrees of freedom unique to the entropy-stabilized condition. Here, we demonstrate unexpected and predictive control of this state using formulation, epitaxial constraints, and kinetic arrest of metastable macrostates. Specifically, aliovalent cation substitutions, tightly controlled substrate temperatures, and conditions favoring significant adatom kinetic energy, can program the out-of-plane lattice parameter of coherent rock salt HEOs while preserving in-plane epitaxial pinning to MgO. Lattice strains exceeding 5% can be stabilized in multilayer heterostructures using this approach, where 3+ cations compensated by cation vacancies predominate the defect chemistry landscape. We highlight the exemplar (Sc,Mg,Co,Ni,Cu,Zn)O/(Cr,Mg,Co,Ni,Cu,Zn)O (JSc/JCr) system where Sc and Cr substitution into the rock salt structure produces pseudomorphic heterostructures between individual antiferromagnets exhibiting exceptional strain and abrupt interfaces across which the Co valence switches from mostly 2+ to an even 2+/3+ mixture. These unprecedented valence interfaces are accompanied by a 2x exchange bias boost compared to single-layer constituents, that could be attributed to enhanced uncompensated spins in the layers themselves or around the buried JSc/JCr interface. These results establish pseudomorphic valence interfaces with anomalous crystallinity as a source of new magnetic macrostates that host emergent magnetic and spintronic functionality.

cond-mat.mtrl-sci↗

arXiv2026

Successful growth of low carrier density $\alpha$-In$_2$Se$_3$ single crystals using Se-flux in a modified Bridgman furnace

Indium selenide (In$_2$Se$_3$) has garnered significant attention for its intriguing properties and applications in batteries, solar cells, photodetectors and ferroelectric devices. However, the controlled synthesis of single phase $\alpha$-In$_2$Se$_3$ remains challenging owing to its complex phase diagram, presence of multiple polymorphs and the high volatility of selenium that induces non-stoichiometry and unintentional carrier doping. For ferroelectric {\alpha}-In2Se3, minimizing the carrier density is essential because leakage current can obscure polarization switching. Here, we report the growth of $\alpha$-In$_2$Se$_3$ single crystals using a unique approach, the Se-flux assisted modified vertical Bridgman technique combined with liquid encapsulation under high pressure. This approach creates a high-pressure, Se-rich environment that effectively minimizes Se-vaporization. Structural and compositional analysis using X-ray diffraction, transmission electron microscopy and energy-dispersive X-ray spectroscopy confirm the formation of pure $\alpha$-In$_2$Se$_3$ single crystals with 3R stacking. Furthermore, the crystals exhibit remarkably low carrier density of 1.5-3.2 $\times$ 10$^{16}$ cm$^{-3}$ at 300K$-$the lowest reported to date, reflecting a significant suppression of Se-vacancies relative to the conventional Bridgman or melt-grown crystals. Through transport and ARPES measurements on different batches of crystals, we also demonstrate that the amount of Se-flux plays a crucial role in controlling Se-vacancies. Our results thus establish this modified Bridgman method as an effective strategy for synthesizing large $\alpha$-In$_2$Se$_3$ single crystals with reduced intrinsic defects. This technique can be broadly applied to grow other volatile chalcogenides with reduced defects and controlled stoichiometry.

cond-mat.mtrl-sci↗