arXiv subjects

Abdullah Giray Yaglikci

Publications and source records attributed to Abdullah Giray Yaglikci.

6 recordsLinked to original sources

arXiv2026

CertiFlash: A Formal Verification Framework for Flash Translation Layers in Computational Solid State Drives

Data-intensive applications move large amounts of data from storage to the compute unit, incurring significant data movement overhead. Storage-centric computing reduces this overhead by moving computation near or inside solid-state drives (SSDs). Enabling it requires modifying SSD policies, e.g., address translation and garbage collection, which are part of the Flash Translation Layer (FTL), the SSD's firmware. Modifying the FTL is error-prone. Because FTL logic has direct access to security-critical device components, even a functionally correct FTL can leak data between tenants, drop integrity tags, or assign a flash block to the wrong tenant. We show that a faulty FTL can corrupt the device state at five surfaces inside the SSD, and demonstrate them on a DaisyPlus OpenSSD. Prior work verifies individual FTL designs, but has two limitations. (1) It establishes only functional correctness, so a modified FTL can violate isolation, integrity, and ownership and still pass verification. (2) It is tied to a single FTL design, so every modification requires redoing every proof. We propose CertiFlash, a formal verification framework for FTLs, mechanized in the Rocq proof assistant, that gives designers a machine-checked proof of security and correctness. CertiFlash models an FTL as a deterministic state machine with a single global invariant over mapping, isolation, integrity, ownership, and allocation. We prove once, over a general FTL model, that (i) every FTL operation preserves the invariant and (ii) the model refines an idealized block device. For a new design, a designer discharges five hypotheses about its own operations instead of redoing either proof. Across four case studies, a designer adds 27 to 3,231 lines against a 16,489-line framework, significantly reducing the verification effort. CertiFlash is open source.

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arXiv2025

In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips

In this work, we experimentally demonstrate that it is possible to generate true random numbers at high throughput and low latency in commercial off-the-shelf (COTS) DRAM chips by leveraging simultaneous multiple-row activation (SiMRA) via an extensive characterization of 96 DDR4 DRAM chips. We rigorously analyze SiMRA's true random generation potential in terms of entropy, latency, and throughput for varying numbers of simultaneously activated DRAM rows (i.e., 2, 4, 8, 16, and 32), data patterns, temperature levels, and spatial variations. Among our 11 key experimental observations, we highlight four key results. First, we evaluate the quality of our TRNG designs using the commonly-used NIST statistical test suite for randomness and find that all SiMRA-based TRNG designs successfully pass each test. Second, 2-, 8-, 16-, and 32-row activation-based TRNG designs outperform the state-of-theart DRAM-based TRNG in throughput by up to 1.15x, 1.99x, 1.82x, and 1.39x, respectively. Third, SiMRA's entropy tends to increase with the number of simultaneously activated DRAM rows. Fourth, operational parameters and conditions (e.g., data pattern and temperature) significantly affect entropy. For example, for most of the tested modules, the average entropy of 32-row activation is 2.51x higher than that of 2-row activation. For example, increasing the temperature from 50°C to 90°C decreases SiMRA's entropy by 1.53x for 32-row activation. To aid future research and development, we open-source our infrastructure at https://github.com/CMU-SAFARI/SiMRA-TRNG.

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arXiv2024

ABACuS: All-Bank Activation Counters for Scalable and Low Overhead RowHammer Mitigation

We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerability. We observe that both benign workloads and RowHammer attacks tend to access DRAM rows with the same row address in multiple DRAM banks at around the same time. Based on this observation, ABACuS's key idea is to use a single shared row activation counter to track activations to the rows with the same row address in all DRAM banks. Unlike state-of-the-art RowHammer mitigation mechanisms that implement a separate row activation counter for each DRAM bank, ABACuS implements fewer counters (e.g., only one) to track an equal number of aggressor rows. Our evaluations show that ABACuS securely prevents RowHammer bitflips at low performance/energy overhead and low area cost. We compare ABACuS to four state-of-the-art mitigation mechanisms. At a near-future RowHammer threshold of 1000, ABACuS incurs only 0.58% (0.77%) performance and 1.66% (2.12%) DRAM energy overheads, averaged across 62 single-core (8-core) workloads, requiring only 9.47 KiB of storage per DRAM rank. At the RowHammer threshold of 1000, the best prior low-area-cost mitigation mechanism incurs 1.80% higher average performance overhead than ABACuS, while ABACuS requires 2.50X smaller chip area to implement. At a future RowHammer threshold of 125, ABACuS performs very similarly to (within 0.38% of the performance of) the best prior performance- and energy-efficient RowHammer mitigation mechanism while requiring 22.72X smaller chip area. ABACuS is freely and openly available at https://github.com/CMU-SAFARI/ABACuS.

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arXiv2024

Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Bandwidth Memory (HBM). Detailed characterization of six real HBM2 DRAM chips in two different FPGA boards shows that (1) the read disturbance vulnerability significantly varies between different HBM2 chips and between different components (e.g., 3D-stacked channels) inside a chip, (2) DRAM rows at the end and in the middle of a bank are more resilient to read disturbance, (3) fewer additional activations are sufficient to induce more read disturbance bitflips in a DRAM row if the row exhibits the first bitflip at a relatively high activation count, (4) a modern HBM2 chip implements undocumented read disturbance defenses that track potential aggressor rows based on how many times they are activated. We describe how our findings could be leveraged to develop more powerful read disturbance attacks and more efficient defense mechanisms. We open source all our code and data to facilitate future research at https://github.com/CMU-SAFARI/HBM-Read-Disturbance.

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arXiv2024

PULSAR: Simultaneous Many-Row Activation for Reliable and High-Performance Computing in Off-the-Shelf DRAM Chips

Data movement between the processor and the main memory is a first-order obstacle against improving performance and energy efficiency in modern systems. To address this obstacle, Processing-using-Memory (PuM) is a promising approach where bulk-bitwise operations are performed leveraging intrinsic analog properties within the DRAM array and massive parallelism across DRAM columns. Unfortunately, 1) modern off-the-shelf DRAM chips do not officially support PuM operations, and 2) existing techniques of performing PuM operations on off-the-shelf DRAM chips suffer from two key limitations. First, these techniques have low success rates, i.e., only a small fraction of DRAM columns can correctly execute PuM operations because they operate beyond manufacturer-recommended timing constraints, causing these operations to be highly susceptible to noise and process variation. Second, these techniques have limited compute primitives, preventing them from fully leveraging parallelism across DRAM columns and thus hindering their performance benefits. We propose PULSAR, a new technique to enable high-success-rate and high-performance PuM operations in off-the-shelf DRAM chips. PULSAR leverages our new observation that a carefully crafted sequence of DRAM commands simultaneously activates up to 32 DRAM rows. PULSAR overcomes the limitations of existing techniques by 1) replicating the input data to improve the success rate and 2) enabling new bulk bitwise operations (e.g., many-input majority, Multi-RowInit, and Bulk-Write) to improve the performance. Our analysis on 120 off-the-shelf DDR4 chips from two major manufacturers shows that PULSAR achieves a 24.18% higher success rate and 121% higher performance over seven arithmetic-logic operations compared to FracDRAM, a state-of-the-art off-the-shelf DRAM-based PuM technique.

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arXiv2020

CLR-DRAM: A Low-Cost DRAM Architecture Enabling Dynamic Capacity-Latency Trade-Off

DRAM is the prevalent main memory technology, but its long access latency can limit the performance of many workloads. Although prior works provide DRAM designs that reduce DRAM access latency, their reduced storage capacities hinder the performance of workloads that need large memory capacity. Because the capacity-latency trade-off is fixed at design time, previous works cannot achieve maximum performance under very different and dynamic workload demands. This paper proposes Capacity-Latency-Reconfigurable DRAM (CLR-DRAM), a new DRAM architecture that enables dynamic capacity-latency trade-off at low cost. CLR-DRAM allows dynamic reconfiguration of any DRAM row to switch between two operating modes: 1) max-capacity mode, where every DRAM cell operates individually to achieve approximately the same storage density as a density-optimized commodity DRAM chip and 2) high-performance mode, where two adjacent DRAM cells in a DRAM row and their sense amplifiers are coupled to operate as a single low-latency logical cell driven by a single logical sense amplifier. We implement CLR-DRAM by adding isolation transistors in each DRAM subarray. Our evaluations show that CLR-DRAM can improve system performance and DRAM energy consumption by 18.6% and 29.7% on average with four-core multiprogrammed workloads. We believe that CLR-DRAM opens new research directions for a system to adapt to the diverse and dynamically changing memory capacity and access latency demands of workloads.

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