arXiv subjects

Abdullah Rasmita

Publications and source records attributed to Abdullah Rasmita.

18 recordsLinked to original sources

arXiv2025

Electronic Phonons in a Moir\'e Electron Crystal

Collective quantum phenomena, such as the excitation of composite fermions1, spin waves2, and exciton condensation3,4, can emerge in strongly correlated systems like the fractional quantum Hall states5, spin liquids6, or excitonic insulators7. Two-dimensional (2D) moir\'e superlattices have emerged as a powerful platform for exploring such correlated phases and their associated collective excitations8,9. Specifically, electron crystals stabilized by longrange Coulomb interactions may host collective vibrational excitations emerging from electron correlations10, termed electronic phonons, which are fundamentally distinct from atomic lattice phonons. Despite theoretical prediction of their existence in moir\'e electron crystals11, direct experimental evidence has remained elusive. Here we report the observation of electronic phonons in the Mott insulating and stripe phases of a WS2/WSe2 moir\'e superlattice, achieved through light scattering measurements. The phonon energies, temperature and filling factor dependencies, along with theoretical modeling, corroborate their origin as collective vibrations of a correlated electron crystal. Polarization-resolved measurements further indicate rotational symmetry breaking in the Mott state. Notably, these electronic phonons exhibit strong tunability in energy, intensity, and polarization under external electric or magnetic fields, highlighting rich and controllable lattice dynamics of the electron crystal. These findings provide direct spectroscopic evidence for the electronic crystalline nature of correlated phases, opening avenues for probing and manipulating collective excitations in correlated electron systems.

cond-mat.str-el↗

arXiv2025

Frequency-matching quantum key distribution

Quantum key distribution (QKD) enables information-theoretically secure communication against eavesdropping. However, phase instability remains a challenge across many QKD applications, particularly in schemes such as twin-field QKD and measurement-device-independent QKD. The most dominant source of phase fluctuation arises from the frequency offset between independent lasers. Here we propose a method to address this issue by employing a classical photodiode to compensate for the laser frequency difference. As an application of this method, we implement this technique in a mode-pairing QKD system, achieving an error rate approaching the theoretical limit and surpassing the linear key-rate bound over a fiber distance of 296.8 km. This approach provides a practical solution for frequency matching between independent lasers and can be extended to other fields requiring precise phase stabilization.

quant-ph↗

arXiv2025

Optical Switching of Moir\'e Chern Ferromagnet

Optical manipulation of quantum matter offers a non-contact, high-precision and fast control. Fractional Chern ferromagnet states in moir\'e superlattices are promising for topological quantum computing, but an effective optical control protocol has remained elusive. Here, we demonstrate robust optical switching of integer and fractional Chern ferromagnets in twisted MoTe2 bilayers using circularly polarized light. Highly efficient optical manipulation of spin orientations in the topological ferromagnet regime is realized at zero field using a pump light power as low as 28 nanowatts per square micrometer. Utilizing this optically induced transition, we also demonstrate magnetic bistate cycling and spatially resolved writing of ferromagnetic domain walls. This work establishes a reliable and efficient optical control scheme for moir\'e Chern ferromagnets, paving the way for dissipationless spintronics and quantized Chern junction devices.

cond-mat.mes-hall↗

arXiv2025

Spatial filtering of interlayer exciton ground state in WSe2/MoS2 heterobilayer

Long-life interlayer excitons (IXs) in transition metal dichalcogenide (TMD) heterostructure are promising for realizing excitonic condensates at high temperatures. Critical to this objective is to separate the IX ground state (the lowest energy of IX state) emission from other states emissions. Filtering the IX ground state is also essential in uncovering the dynamics of correlated excitonic states, such as the excitonic Mott insulator. Here, we show that the IX ground state in WSe2/MoS2 heterobilayer can be separated from other states by its spatial profile. The emissions from different moire IX modes are identified by their different energies and spatial distributions, which fits well with the rate-diffusion model for cascading emission. Our results show spatial filtering of the ground state mode and enrich the toolbox to realize correlated states at elevated temperatures.

cond-mat.mes-hall↗

arXiv2024

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

Solid-state defects susceptible of spin manipulation hold great promise for scalable quantum technology. To broaden their utility, operating at room temperature and emitting in the telecom wavelength range are desired, eliminating cryogenic requirements and leveraging existing optical fiber infrastructure for transmitting the quantum information. To that end, we report that telecom single photon emitters (SPEs) in gallium nitride (GaN) exhibit optically detected magnetic resonance (ODMR) at room temperature. The analysis of ODMR as a function of magnetic field orientation enables the determination of the orientation of the spin quantization axis with respect to the GaN crystalline lattice. The optical transitions dynamics are analyzed to gain further insight into the transition rates dominating ODMR. Our findings, coupled with GaN's mature fabrication technology, could facilitate the realization of scalable quantum technology.

cond-mat.mtrl-sci↗

arXiv2023

Interlayer donor-acceptor pair excitons in MoSe2/WSe2 moir\'e heterobilayer

Localized interlayer excitons (LIXs) in two-dimensional moir\'e superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moir\'e MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moir\'e heterostructures and pave new directions for engineering interlayer exciton properties in moir\'e superlattices.

cond-mat.mes-hall↗

arXiv2022

Optical signature of cascade transitions between moiré interlayer excitons

Cascade transition between energy levels has important applications, such as in quantum information protocols and quantum cascade lasers. In two-dimensional heterostructure, the moiré superlattice potential can result in multiple interlayer exciton (IX) energy levels. We demonstrate the cascade transitions between such moiré IXs by performing time- and energy-resolved photoluminescence measurements. We show that the lower-energy moiré IX can be excited to higher-energy ones, facilitating IX population inversion.

cond-mat.mes-hall↗

arXiv2021

Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures

Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposite VHE contribution from the electron and hole in different layers. These results indicate the bipolar transport nature of our valleytronic transistor. Utilizing this gate tunability, we demonstrate a bipolar valleytronic transistor. Our results can be used to improve the ON/OFF ratio of the valleytronic transistor and to realize more versatile valleytronics logic circuits.

cond-mat.mes-hall↗

arXiv2021

Layer engineered interlayer excitons

Photoluminescence (PL) from excitons serves as a powerful tool to characterize the optoelectronic property and band structure of semiconductors, especially for atomically thin 2D transition metal chalcogenide (TMD) materials. However, PL quenches quickly when the thickness of TMD material increases from monolayer to few-layers, due to the change from direct to indirect band transition. Here we show that PL can be recovered by engineering multilayer heterostructures, with the band transition reserved to be direct type. We report emission from layer engineered interlayer excitons from these multilayer heterostructures. Moreover, as desired for valleytronic devices, the lifetime, valley polarization, and the valley lifetime of the generated interlayer excitons can all be significantly improved as compared with that in the monolayer-monolayer heterostructure. Our results pave the way for controlling the properties of interlayer excitons by layer engineering.

cond-mat.mtrl-sci↗

arXiv2019

Room temperature nanocavity laser with interlayer excitons in 2D heterostructures

Atomically thin layered two dimensional (2D) material has provided a rich library for both fundamental research and device applications. One of the special advantages is that, bandgap engineering and controlled material response can be achieved by stacking different 2D materials. Recently several types of excitonic lasers have been reported based on Transition metal dichalcogenide (TMDC) monolayers, however, the emission is still the intrinsic energy bandgap of the monolayers and lasers harnessing the flexibility of Van der Waals heterostructures have not been demonstrated yet. Here, we report for the first time a room temperature interlayer exciton laser with MoS2/WSe2 heterostructures. The onset of lasing action was identified by a combination of distinct kink in the 'L-L' curve and the noticeable collapse of spectral linewidth. Different from visible emission of intralayer excitons for both MoS2 and WSe2, our interlayer exciton laser works in the infrared range, which is fully compatible with the well-established technologies in silicon photonics. Thanks to the long lifetime of interlayer excitons, the requirement of the cavity quality factor is relaxed by orders of magnitude. The demonstration of room temperature interlayer exciton laser might open new perspectives for the development of coherent light source with tailored optical properties on silicon photonics platform.

cond-mat.mes-hall↗

arXiv2019

Circular photogalvanic effect in 2D van der Waals heterostructure

Utilizing spin or valley degree of freedom is one of the promising approaches to realize more energy-efficient information processing. In the 2D transition metal dichalcogenide, the spin/valley current can be generated by utilizing the circular photogalvanic effect (CPGE), i.e., the generation of photocurrent by a circularly polarized light. Here we show that an in-plane electric field at MoS2/WSe2 heterostructure-electrode boundary results in an electrically tunable circular photogalvanic effect (CPGE) under optical excitation with normal incidence. The observed CPGE can be explained by the valence band shift due to the in-plane electric field and different effective relaxation times between hole and electron combined with the valley optical selection rule. Furthermore, we show that the CPGE can be controlled by changing the Fermi level using an out-of-plane electric field. Such phenomena persist even at room temperature. This finding may facilitate the utilization of 2D heterostructure as an opto-valleytronics and opto-spintronics device platform.

cond-mat.mtrl-sci↗

arXiv2019

Direct photoluminescence probing of ferromagnetism in monolayer two-dimensional CrBr3

Atomically thin magnets are the key element to build up spintronics based on two-dimensional materials. The surface nature of two-dimensional ferromagnet opens up opportunities to improve the device performance efficiently. Here, we report the intrinsic ferromagnetism in atomically thin monolayer CrBr3, directly probed by polarization resolved magneto-photoluminescence. The spontaneous magnetization persists in monolayer CrBr3 with a Curie temperature of 34 K. The development of magnons by the thermal excitation is in line with the spin-wave theory. We attribute the layer-number dependent hysteresis loops in thick layers to the magnetic domain structures. As a stable monolayer material in air, CrBr3 provides a convenient platform for fundamental physics and pushes the potential applications of the two-dimensional ferromagnetism.

cond-mat.mes-hall↗

arXiv2018

Bright room temperature single photon source at telecom range in cubic silicon carbide

Single photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of ~ MHz. Together with the fact that SiC is a growth and fabrication-friendly material, our result may pave the way for its future application in quantum communication technology applications.

physics.optics↗

arXiv2018

Optical spin pumping induced pseudo-magnetic field in two dimensional heterostructures

Two dimensional heterostructures are likely to provide new avenues for the manipulation of magnetization that is crucial for spintronics or magnetoelectronics. Here, we demonstrate that optical spin pumping can generate a large effective magnetic field in two dimensional MoSe2/WSe2 heterostructures. We determine the strength of the generated field by polarization-resolved measurement of the interlayer exciton photoluminescence spectrum: the measured splitting exceeding 10 milli-electron volts (meV) between the emission originating from the two valleys corresponds to an effective magnetic field of ~ 30 T. The strength of this optically induced field can be controlled by the excitation light polarization. Our finding opens up new possibilities for optically controlled spintronic devices based on van der Waals heterostructures.

cond-mat.mes-hall↗

arXiv2017

Room-temperature solid state quantum emitters in the telecom range

On demand single photon emitters (SPEs) play a key role across a broad range of quantum technologies, including quantum computation, quantum simulation, quantum metrology and quantum communications. In quantum networks and quantum key distribution protocols, where photons are employed as flying qubits, telecom wavelength operation is preferred due to the reduced fibre loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. Here we report a triggered, optically stable, room temperature solid state SPE operating at telecom wavelengths. The emitters exhibit high photon purity (~ 5% multiphoton events) and a record-high brightness of ~ 1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.

quant-ph↗

arXiv2017

Microsecond dark-exciton valley polarization memory in 2D heterostructures

Transition metal dichalcogenides (TMDs) have valley degree of freedom, which features optical selection rule and spin-valley locking, making them promising for valleytronics devices and quantum computation. For either application, a long valley polarization lifetime is crucial. Previous results showed that it is around picosecond in monolayer excitons, nanosecond for electrons, holes or local excitons and tens of nanosecond for interlayer excitons. Here we show that dark excitons in 2D heterostructures provide a microsecond valley polarization memory thanks to the magnetic field induced suppression of valley mixing. The lifetime of the dark excitons shows magnetic field and temperature dependence which is consistent with the theoretical prediction. The long dark exciton lifetime and valley polarization lifetime in 2D heterostructures make them promising for long-distance exciton transport and macroscopic quantum state generations.

cond-mat.mes-hall↗

arXiv2017

Coherent control of a strongly driven silicon vacancy optical transition in diamond

The ability to prepare, optically read out and coherently control single quantum states is a key requirement for quantum information processing. Optically active solid state emitters have emerged as promising candidates with their prospects for on chip integration as quantum nodes and sources of coherent photons for connecting these nodes. Under strongly driving resonant laser field, such quantum emitter can exhibit quantum behavior such as Autler-Townes splitting and Mollow triplet spectrum. Here we demonstrate coherent control of a strongly driven optical transition in silicon vacancy (SiV) center in diamond. Rapid optical detection of photons enabled the observation of time resolved coherent Rabi oscillations and the Mollow triplet from an optical transition of a single SiV defect. Detection with a probing transition further confirmed Autler-Townes splitting generated by a strong laser field. Coherence time of the emitted photons is shown to be comparable to its lifetime and robust under very strong driving laser field, which is promising for generation of indistinguishable photons.

quant-ph↗

arXiv2016

CVD nanodiamonds with non-blinking, near transform-limited linewidths emitters

Near transform-limited single photon sources are required for perfect photon indistinguishability in quantum networks. Having such sources in nanodiamonds is particularly important since it can enable engineering hybrid quantum photonic systems. In this letter, we report the generation of optically stable, nearly transform-limited single silicon vacancy emitters in nanodiamonds. Lines as narrow as 325 MHz are reported, which is comparable to the lifetime limited linewidth. Moreover, the emitters exhibit minimal spectrum diffusion and absolute photostability, even if pumped well above saturation. Our results suggest that nanodiamonds can host color centers with supreme properties suitable for hybrid photonic devices and quantum information.

cond-mat.mtrl-sci↗