arXiv subjects

Abdur-Raheem Al-Hallak

Publications and source records attributed to Abdur-Raheem Al-Hallak.

3 recordsLinked to original sources

arXiv2026

Ultra-Low-Loss Silicon Nitride on Sapphire for Broad-Transparency Nonlinear and Quantum Photonics

The field of photonic integrated circuits (PIC) has flourished in the past two decades, fueling numerous cutting-edge applications across sensing, networking, data interconnect, and quantum information processing. As a guiding material for PIC, Si$_3$N$_4$ has seen extensive use for its ultra-low loss, broad transparency, and diversity in implementation across both thin and thick films. Although the standard, traditional silicon dioxide (SiO$_2$) on silicon (Si) substrates that underpin the majority of Si$_3$N$_4$ photonics face drawbacks in the form of long-wavelength transparency limited by SiO$_2$, high-stress deposition for anomalous dispersion thick-film Si$_3$N$_4$, and leakage loss to the Si layer for low-confinement thin-film Si$_3$N$_4$. Featuring increased long-wavelength transparency into the mid-infrared, low-stress deposition of Si$_3$N$_4$, and a low index, this work investigates sapphire substrates as alternate hosts for Si$_3$N$_4$ photonics with greater spectral coverage and reduced fabrication complexity. This work presents a robust method of fabricating ultra-low loss photonic integrated circuits on a 500-nm-thick Si$_3$N$_4$-on-sapphire platform, exhibiting record-low losses below $0.1 \rm \;dB/cm$. Implemented using this process are high-Q microrings with intrinsic quality factors in excess of $4.5\times10^6$ and coupled-ring photonic molecules to support nonlinear gain. Leveraging the achievable low loss and high-Q, this work further reports the first demonstration of Kerr-comb and soliton generation on the Si$_3$N$_4$-on-sapphire platform. These advances in loss, quality factor, and soliton generation on this versatile, broad-transparency platform pave the way for future work in spectroscopy and quantum-enhanced sensing across previously prohibited spectral regions for Si$_3$N$_4$ photonics with reduced fabrication complexity.

physics.optics↗

arXiv2025

Hybrid Scandium Aluminum Nitride/Silicon Nitride Integrated Photonic Circuits

Scandium-doped aluminum nitride has recently emerged as a promising material for quantum photonic integrated circuits (PICs) due to its unique combination of strong second-order nonlinearity, ferroelectricity, piezoelectricity, and complementary metal-oxide-semiconductor (CMOS) compatibility. However, the relatively high optical loss reported to date-typically above 2.4 dB/cm-remains a key challenge that limits its widespread application in low-loss PICs. Here, we present a monolithically integrated $\mathrm{Si}_3\mathrm{N}_4$-ScAlN waveguide platform that overcomes this limitation. By confining light within an etched $\mathrm{Si}_3\mathrm{N}_4$ waveguide while preserving the functional properties of the underlying ScAlN layer, we achieve an intrinsic quality factor of $Q_{\mathrm{i}} = 3.35 \times 10^5$, corresponding to a propagation loss of 1.03 dB/cm-comparable to that of commercial single-mode silicon-on-insulator (SOI) waveguides. This hybrid architecture enables low-loss and scalable fabrication while retaining the advanced functionalities offered by ScAlN, such as ferroelectricity and piezoelectricity. Our results establish a new pathway for ScAlN-based PICs with potential applications in high-speed optical communication, modulation, sensing, nonlinear optics, and quantum optics within CMOS-compatible platforms.

physics.optics↗

arXiv2024

Fabrication of Ultra-Low-Loss, Dispersion-Engineered Silicon Nitride Photonic Integrated Circuits via Silicon Hardmask Etching

Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have emerged as a versatile platform for a wide range of applications, such as nonlinear optics, narrow-linewidth lasers, and quantum photonics. While thin-film Si$_3$N$_4$ processes have been extensively developed, many nonlinear and quantum optics applications require the use of thick Si$_3$N$_4$ films with engineered dispersion, high mode confinement, and low optical loss. However, high tensile stress in thick Si$_3$N$_4$ films often leads to cracking, making the fabrication challenging to meet these requirements. In this work, we present a robust and reliable fabrication method for ultra-low-loss, dispersion-engineered Si$_3$N$_4$ PICs using amorphous silicon (a-Si) hardmask etching. This approach enables smooth etching of thick Si$_3$N$_4$ waveguides while ensuring long-term storage of crack-free Si$_3$N$_4$ wafers. We achieve intrinsic quality factors ($Q_i$) as high as $25.6 \times 10^6$, corresponding to a propagation loss of 1.6 dB/m. The introduction of a-Si hardmask etching and novel crack-isolation trenches offers notable advantages, including high etching selectivity, long-term wafer storage, high yield, and full compatibility with existing well-developed silicon-based semiconductor processes. We demonstrate frequency comb generation in the fabricated microring resonators, showcasing the platform's potential for applications in optical communication, nonlinear optics, metrology, and spectroscopy. This stable and efficient fabrication method offers high performance with significantly reduced fabrication complexity, representing a remarkable advancement toward mass production of Si$_3$N$_4$ PICs for a wide spectrum of applications.

physics.optics↗