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Abhijit Mookerjee

Publications and source records attributed to Abhijit Mookerjee.

At least 19 recordsLinked to original sources

Magnetization dynamics in Fe$_x$Co$_{1-x}$ in presence of chemical disorder

In this paper, we present a theoretical formulation of magnetization dynamics in disordered binary alloys based on Kubo linear response theory interfaced with the combination of seamlessly three approaches; density functional based tight-binding linear muffin-tin orbitals, generalized recursion and Augmented space formalism. We apply this method to study the magnetization dynamics in chemically disordered Fe$_x$Co$_{1-x}$ ($x$ = 0.2, 0.5, 0.8) alloys. We reported that the magnon energies decrease with an increase in Co concentration. Significant magnon softening has been observed in Fe$_{20}$Co$_{80}$ at the Brillouin zone boundary. The magnon-electron scattering increases with increasing Co content which in turn modifies the hybridization between the Fe and Co atoms. This reduces the exchange energy between the atoms and soften down the magnon energy. The lowest magnon lifetime in found in Fe$_{50}$Co$_{50}$, where disorder is maximum. This clearly indicates that the damping of magnon energies in Fe$_x$Co$_{1-x}$ is governed by the hybridization between Fe and Co whereas the magnon lifetime is controlled by disorder configuration. Our atomistic spin dynamics simulations show a reasonable agreement with our theoretical approach in magnon dispersion for different alloy compositions.

cond-mat.mtrl-sci

Exploring the role of electronic structure on photo-catalytic behavior of carbon-nitride polymorphs

A fully self-consistent density-functional theory (DFT) with improved functionals is used to provide a comprehensive account of structural, electronic, and optical properties of C$_{3}$N$_{4}$ polymorphs. Using our recently developed van Leeuwen-Baerends (vLB) corrected local-density approximation (LDA), we implemented LDA+vLB within full-potential N$^{th}$-order muffin-tin orbital (FP-NMTO) method and show that it improves structural properties and band gaps compared to semi-local functionals (LDA/GGA). We demonstrate that the LDA+vLB predicts band-structure and work-function for well-studied 2D-graphene and bulk-Si in very good agreement with experiments, and more exact hybrid functional (HSE) calculations as implemented in the Quantum-Espresso (QE) package. The structural and electronic-structure (band gap) properties of C$_{3}$N$_{4}$ polymorphs calculated using FP-NMTO-LDA+vLB is compared with more sophisticated hybrid-functional calculations. We also perform detailed investigation of photocatalytic behavior using QE-HSE method of C$_{3}$N$_{4}$ polymorphs through work-function, band (valence and conduction) position with respect to water reduction and oxidation potential. Our results show $γ$-C$_{3}$N$_{4}$ as the best candidate for photocatalysis among all the C$_{3}$N$_{4}$~polymorphs but it is dynamically unstable at `zero' pressure. We show that $γ$-C$_{3}$N$_{4}$ can be stabilized under hydrostatic-pressure, which improves its photocatalytic behavior relative to water reduction and oxidation potentials.

cond-mat.mtrl-sci

Increased metallicity of Carbon nanotubes because of incorporation of extended Stone-Wales' defects: an ab-initio real space approach

We propose an ab-initio combination of the Linear Muffin-Tin Orbital and the Recursion Methods to study the effect of extended Stone-Wales defects in single layer Carbon nanotubes. We have successfully applied this to zigzag and armchair tubes. The methodology involves no intrinsic mean-field like assumptions or external parameter fitting. As defects proliferate, the low density of states near the Fermi levels of the pristine tubes is filled with defect states. The increase of DOS at the Fermi level leads to enhanced conduction, which indicates enhanced metallicity due to SW defects in the nanotubes.

cond-mat.mes-hall

Simple correction to bandgap in IV and III-V semiconductors: an improved first-principles local density functional theory

We report results from a fast, efficient, and first-principles full-potential N$^{th}$-order muffin-tin orbital (FP-NMTO) method combined with van Leeuwen-Baerends correction to local density exchange-correlation potential. We show that more complete and compact basis set is critical in improving the electronic and structural properties. We exemplify the self-consistent FP-NMTO calculations on group IV and III-V semiconductors. Notably, predicted bandgaps, lattice constants, and bulk moduli are in good agreement with experiments (e.g., we find for Ge $0.86~e$V, $5.57$~Å, $75$~GPa vs. measured $0.74~e$V, $5.66$~Å, $77.2$~GPa). We also showcase its application to the electronic properties of 2-dimensional $h-$BN and $h-$SiC, again finding good agreement with experiments.

cond-mat.mtrl-sci

Electronic and optical properties of Germagraphene, a direct band-gap semiconductor

In this communication, we report a theoretical attempt to understand the electronic and optical properties of germagraphene, a two-dimensional graphene analogue. We study two different structures, C$_{17}$Ge and C$_{16}$Ge. In the C$_{17}$Ge structure, a germanium atom replaces a carbon atom while in C$_{16}$Ge structure, a carbon-carbon bond is replaced by a single germanium atom. These two types of doping have been experimentally made possible by Tripathi \etal [{\it{ACS Nano (2018) 1254641-4647}}]. We find that C$_{16}$Ge has a planar structure, whereas, the Ge atom in C$_{17}$Ge settles in an out-of-the plane position, resulting in a buckled structure. Due to Ge doping, the band-gaps open up in both. The 1.227 eV direct gap of C$_{17}$Ge is ideal for effective light absorbance and optoelectronic devices. Further study of optical properties supports this claim as well.

physics.comp-ph

Band-gap tuning and optical response of two-dimensional Si$_x$C$_{1-x}$: A first-principles real space study of disordered 2D materials

We present a real-space formulation for calculating the electronic structure and optical conductivity of such random alloys based on the Kubo-Greenwood formalism interfaced with the augmented space recursion (ASR) [A. Mookerjee, J. Phys. C: Solid State Phys. {\bf 6}, 1340 (1973)] formulated with the Tight-binding Linear Muffin-tin Orbitals (TB-LMTO) basis with van Leeuwen-Baerends corrected exchange (vLB) [Singh et al, Phys. Rev B {\bf 93}, 085204, (2016)]. This approach has been used to quantitatively analyze the effect of chemical disorder on the configuration averaged electronic properties and optical response of 2D honeycomb siliphene Si$_{x}$C$_{1-x}$ beyond the usual Dirac-cone approximation. We predicted the quantitative effect of disorder on both the electronic-structure and optical response over a wide energy range, and the results discussed in the light of the available experimental and other theoretical data. Our proposed formalism may open up a facile way for planned band gap engineering in opto-electronic applications.

cond-mat.mtrl-sci

Effect of disorder on the optical response of NiPt and Ni$_3$Pt alloys

In this communication we present a detailed study of the effect of chemical disorder on the optical response of Ni$_{1-x}$Pt$_x$ (0.1$\leq$ x $\leq$0.75) and Ni$_{3(1-x)/3}$Pt$_x$ (0.1$\leq$ x $\leq$0.3). We shall propose a formalism which will combine a Kubo-Greenwood approach with a DFT based tight-binding linear muffin-tin orbitals (TB-LMTO) basis and augmented space recursion (ASR) technique to explicitly incorporate the effect of disorder. We show that chemical disorder has a large impact on optical response of Ni-Pt systems. In ordered Ni-Pt alloys, the optical conductivity peaks are sharp. But as we switch on chemical disorder, the UV peak becomes broadened and its position as a function of composition and disorder carries the signature of a phase transition from NiPt to Ni$_3$Pt with decreasing Pt concentration. Quantitatively this agrees well with Massalski's Ni-Pt phase diagram \cite{massal}. Both ordered NiPt and Ni$_3$Pt have an optical conductivity transition at 4.12 eV. But disordered NiPt has an optical conductivity transition at 3.93 eV. If we decrease the Pt content, it results a chemical phase transition from NiPt to Ni$_3$Pt and shifts the peak position by 1.67 eV to the ultraviolet range at 5.6 eV. There is a significant broadening of UV peak with increasing Pt content due to enhancement of 3d(Ni)-5d(Pt) bonding. Chemical disorder enhances the optical response of NiPt alloys nearly one order of magnitude. Our study also shows the fragile magnetic effect on optical response of disordered Ni$_{1-x}$Pt$_x$ (0.4$<$ x $<$0.6) binary alloys. Our theoretical predictions agree more than reasonably well with both earlier experimental as well as theoretical investigations.

cond-mat.mtrl-sci

Effect of doping on the electronic properties of Graphene and T-graphene : A theoretical approach

In this communication we present together four distinct techniques for the study of electronic structure of solids : the tight-binding linear muffin-tin orbitals (TB-LMTO), the real space and augmented space recursions and the modified exchange-correlation. Using this we investigate the effect of random vacancies on the electronic properties of the carbon hexagonal allotrope, graphene, and the non-hexagonal allotrope, planar T graphene. We have inserted random vacancies at different concentrations, to simulate disorder in pristine graphene and planar T graphene sheets. The resulting disorder, both on-site (diagonal disorder) as well as in the hopping integrals (off-diagonal disorder), introduces sharp peaks in the vicinity of the Dirac point built up from localized states for both hexagonal and non-hexagonal structures. These peaks become resonances with increasing vacancy concentration. We find that in presence of vacancies, graphene-like linear dispersion appears in planar T graphene and the cross points form a loop in the first Brillouin zone similar to buckled T graphene that originates from $π$ and $π$* bands without regular hexagonal symmetry. We also calculate the single-particle relaxation time, $τ(\vec{q})$ of $\vec{q}$ labeled quantum electronic states which originates from scattering due to presence of vacancies, causing quantum level broadening.

cond-mat.mes-hall

Disorder induced lifetime effects in binary disordered systems : a first principles formalism and an application to doped Graphene

In this work the conducting properties of graphene lattice with a particular concentration of defect (5\% and 10\%) has been studied. The real space block recursion method introduced by Haydock et al. has been used in presence of the random distribution of defects in graphene. This Green function based method is found more powerful than the usual reciprocal based methods which need artificial periodicity. Different resonant states appear because of the presence of topological and local defects are studied within the framework of Green function.

cond-mat.mtrl-sci

Better Band Gaps with Asymptotically Corrected Local Exchange Potentials

We formulate a spin-polarized van Leeuwen and Baerends (vLB) correction to the local density approximation (LDA) exchange potential [Phys. Rev. A 49, 2421 (1994)] that enforces the ionization potential (IP) theorem following Stein et al. [Phys. Rev. Lett. 105, 266802 (2010)]. For electronic-structure problems, the vLB-correction replicates the behavior of exact-exchange potentials, with improved scaling and well-behaved asymptotics, but with the computational cost of semi-local functionals. The vLB+IP corrections produces large improvement in the eigenvalues over that from LDA due to correct asympotic behavior and atomic shell structures, as shown on rare-gas, alkaline-earth, zinc-based oxides, alkali-halides, sulphides, and nitrides. In half-Heusler alloys, this asymptotically-corrected LDA reproduces the spin-polarized properties correctly, including magnetism and half-metallicity. We also considered finite-sized systems [e.g., ringed boron-nitirde (B$_{12}$N$_{12}$) and graphene (C$_{24}$)] to emphasize the wide applicability of the method.

cond-mat.mtrl-sci

Enhanced magnetism of Cu$_n$ clusters capped with N and endohedrally doped with Cr

The focus of our work is on the production of highly magnetic materials out of Cu clusters. We have studied the relative effects of N-capping as well as N mono-doping on the structural stability and electronic properties of the small Cu clusters using first principles density functional theory based electronic structure calculations. We find that the N-capped clusters are more promising in producing giant magnetic moments, such as 14 $μ_B$ for the Cu$_6$N$_6$ cluster and 29 $μ_B$ for the icosahedral Cu$_{13}$N$_{12}$ clusters. This is accompanied by a substantial enhancement in their stability. We suggest that these giant magnetic moments of the capped Cu$_n$ clusters have relevance to the observed room temperature ferromagnetism of Cu doped GaN. For cage-like hollow Cu-clusters, an endohedral Cr-doping together with the N-capping appears as the most promising means to produce stable giant magnetic moments in the copper clusters.

cond-mat.mes-hall

Study of morphology effects on magnetic interactions and band gap variations for 3$d$ late transition metal bi-doped ZnO nano structures by hybrid DFT calculations

Using density functional theory (DFT) based electronic structure calculations, the effects of morphology of semiconducting nano structures on the magnetic interaction between two magnetic dopant atoms as well as a possibility of tuning band gaps have been studied in case of the bi-doped (ZnO)$_{24}$ nano structures with the impurity dopant atoms of the 3$d$ late transition metals (TM) - Mn, Fe, Co, Ni and Cu. To explore the morphology effect, three different structures of the host (ZnO)$_{24}$ nano-system having different degrees of spatial confinement, have been considered : a two dimensional (2D) nanosheet, an one dimensional (1D) nanotube and a finite cage-shaped nanocluster. The present study employs hybrid density functional theory to accurately describe the electronic structure of all the systems. It is shown here that the magnetic coupling between the two dopant atoms, remains mostly anti-ferromagnetic in course of changing the morphology from the sheet geometry to the cage-shaped geometry of the host systems, except for the case of energetically most stable bi-Mn doping, which shows a transition from ferromagnetic to anti-ferromagnetic coupling with decreasing aspect ratio of the host system. The effect of the shape change, however, has a significant effect on the overall band gap variations of both the pristine as well as all the bi-doped systems, irrespective of the nature of the dopant atoms and provides a means for easy tunability of their optoelectronic properties.

cond-mat.mes-hall

Configuration and Self-averaging in disordered systems

The main aim of this work is to present two different methodologies for configuration averaging in disordered systems. The Recursion method is suitable for the calculation of spatial or self-averaging, while the Augmented space formalism averages over different possible configurations of the system. We have applied these techniques to a simple example and compared their results. Based on these, we have reexamined the concept of spatial ergodicity in disordered systems. The specific aspect, we have focused on, is the question "Why does an experimentalist often obtain the averaged result on a single sample ?" We have found that in our example of disordered graphene, the two lead to the same result within the error limits of the two methods.

cond-mat.mtrl-sci

Magnetism on Rough Surfaces of Fe, Co and Ni : An Augmented Space Approach

The augmented space formalism coupled with the recursion method and a tight-binding linear Muffin-tin orbitals basis has been applied to study the effects of roughness on the properties of (001) surfaces of body-centered cubic Fe and face-centered cubic Co and Ni. The formalism is also proposed for the study of smooth surface. Comparisons have been made for three types of surfaces: a smooth surface, the surface with a rough top layer, and a more realistic model with several rough top layers converging into a crystalline bulk. Comparisons have been made between the magnetic moments, work function and electronic density of states in the three models described above.

cond-mat.mtrl-sci

Surface Magnetism of Fe(001), Co(001) and Ni(001)

The Augmented Space Formalism coupled with Recursion method and Density Functional Theory based Tight-Binding Linear Muffin-Tin Orbitals have been applied for a first principles calculation of surface electronic and magnetic properties of body centered cubic Fe(001) and face centered cubic Co(001) and Ni(001). Nine atomic layers have been studied to see the trend of change in these properties from surface into the bulk. Surface magnetic moment has been found to be higher than that of the bulk and in different layers below, magnetic moments show Friedel oscillations in agreement with other studies. Work functions of these systems have been found to agree with experimental values. We propose this real space technique to be suitable for the study of localized physical properties like surface layers and it is also suitable for the study rough surfaces and interfaces.

cond-mat.mtrl-sci

Interplay of force constants in the lattice dynamics of disordered alloys : An ab-initio study

A reliable prediction of interatomic force constants in disordered alloys is an outstanding problem. This is due to the need for a proper treatment of multisite (atleast pair) correlation within a random environment. The situation becomes even more challenging for systems with large difference in atomic size and mass. We propose a systematic density functional theory (DFT) based study to predict the ab-initio force constants in random alloys. The method is based on a marriage between special quasirandom structures (SQS) and the augmented space recursion (ASR) to calculate phonon spectra, density of states (DOS) etc. bcc TaW and fcc NiPt alloys are considered as the two distinct test cases. Ta-Ta (W-W) bond distance in the alloy is predicted to be smaller (larger) than those in pure Ta (W), which, in turn, yields stiffer (softer) force constants for Ta (W). Pt-Pt force constants in the alloy, however, are predicted to be softer compared to Ni-Ni, due to a large bond distance of the former. Our calculated force constants, phonon spectra and DOS are compared with experiments and other theoretical results, wherever available. Correct trend of present results for the two alloys pave a path for further future studies in more complex alloy systems.

cond-mat.mtrl-sci

A real-space study of random extended defects in solids : application to disordered Stone-Wales defects in graphene

We propose here a first-principles, parameter free, real space method for the study of disordered extended defects in solids. We shall illustrate the power of the technique with an application to graphene sheets with randomly placed Stone-Wales defects and shall examine the signature of such random defects on the density of states as a function of their concentration. The technique is general enough to be applied to a whole class of systems with lattice translational symmetry broken not only locally but by extended defects and defect clusters. The real space approach will allow us to distinguish signatures of specific defects and defect clusters.

cond-mat.mtrl-sci

Effect of disorder on the electronic properties of graphene: a theoretical approach

In order to manipulate the properties of graphene, its very important to understand the electronic structure in presence of disorder. We investigate, within a tight-binding description, the effects of disorder in the on-site (diagonal disorder) term in the Hamiltonian as well as in the hopping integral (off-diagonal disorder) on the electronic dispersion and density of states by augmented space recursion method. Extrinsic off-diagonal disorder is shown to have dramatic effects on the two-dimensional Dirac-cone, including asymmetries in the band structures as well as the presence of discontinuous bands in certain limits. Disorder-induced broadening, related to the scattering length (or life-time) of electrons, is modified significantly with the increasing strength of disorder. We propose that our theory is suitable to study the effects of disorder in other 2D materials, e.g., a boron nitride monolayer.

cond-mat.mes-hall