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Abhijith Gopakumar

Publications and source records attributed to Abhijith Gopakumar.

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Oxygen Vacancy Formation Energy in Metal Oxides: High Throughput Computational Studies and Machine Learning Predictions

The oxygen vacancy formation energy ($ΔE_{vf}$) governs defect dynamics and is a useful metric to perform materials selection for a variety of applications. However, density functional theory (DFT) calculations of $ΔE_{vf}$ come at a greater computational cost than the typical bulk calculations available in materials databases due to the involvement of multiple vacancy-containing supercells. As a result, available repositories of direct calculations of $ΔE_{vf}$ remain relatively scarce, and the development of machine learning models capable of delivering accurate predictions is of interest. In the present, work we address both such points. We first report the results of new high-throughput DFT calculations of oxygen vacancy formation energies of the different unique oxygen sites in over 1000 different oxide materials, which together form the largest dataset of directly computed oxygen vacancy formation energies to date, to our knowledge. We then utilize the resulting dataset of $\sim$2500 $ΔE_{vf}$ values to train random forest models with different sets of features, examining both novel features introduced in this work and ones previously employed in the literature. We demonstrate the benefits of including features that contain information specific to the vacancy site and account for both cation identity and oxidation state, and achieve a mean absolute error upon prediction of $\sim$0.3 eV/O, which is comparable to the accuracy observed upon comparison of DFT computations of oxygen vacancy formation energy and experimental results. Finally, we demonstrate the predictive power of the developed models in the search for new compounds for solar-thermochemical water-splitting applications, finding over 250 new AA$^{\prime}$BB$^{\prime}$O$_6$ double perovskite candidates.

cond-mat.mtrl-sci

Identification of High-Dielectric Constant Compounds from Statistical Design

The discovery of high-dielectric materials is crucial to increasing the efficiency of electronic devices and batteries. Here, we report three previously unexplored materials with very high dielectric constants (69 $<$ $ε$ $<$ 101) and large band gaps (2.9$<$ $E_{\text{g}}$(eV) $<$ 5.5) obtained by screening materials databases using statistical optimization algorithms aided by artificial neural networks (ANN). Two of these new dielectrics are mixed-anion compounds (Eu$_5$SiCl$_6$O$_4$ and HoClO), and are shown to be thermodynamically stable against common semiconductors via phase-diagram analysis. We also uncovered four other materials with relatively large dielectric constants (20$<$$ε$$<$40) and band gaps (2.3$<$$E_{\text{g}}$(eV)$<$2.7). While the ANN training data is obtained from Materials Project, the search-space consists of materials from Open Quantum Materials Database (OQMD) - demonstrating a successful implementation of cross-database materials design. Overall, we report dielectric properties of 17 materials calculated using ab-initio calculations, that were selected in our design workflow. The dielectric materials with high dielectric properties predicted in this work open up further experimental research opportunities.

cond-mat.mtrl-sci

OPTIMADE, an API for exchanging materials data

The Open Databases Integration for Materials Design (OPTIMADE) consortium has designed a universal application programming interface (API) to make materials databases accessible and interoperable. We outline the first stable release of the specification, v1.0, which is already supported by many leading databases and several software packages. We illustrate the advantages of the OPTIMADE API through worked examples on each of the public materials databases that support the full API specification.

cond-mat.mtrl-sci