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Abhirami S.

Publications and source records attributed to Abhirami S..

2 recordsLinked to original sources

Current redistribution model of anomalous resistance behaviour in superconductor-topological insulator heterostructures

Anomalous resistance upturn and downturn have been observed on the topological insulator (TI) surface in superconductor-TI (NbN-Bi1.95Sb0.05Se3) heterostructures at ~ mm length scales away from the interface. Magnetotransport measurements were performed to verify that the anomaly is caused due to the superconducting transition of the NbN layer. The possibility of long range superconducting proximity effect due to the spin-polarized TI surface state was ruled out due to the observation of similar anomaly in NbN-Au and NbN-Al heterostructures. It was discovered that the unusual resistance jumps were caused due to current redistribution at the superconductor-TI interface on account of the geometry effects. Results obtained from finite element analysis using COMSOL package has validated the proposed current redistribution (CRD) model of long range resistance anomalies in superconductor-TI and superconductor-metal heterostructures.

cond-mat.supr-con

Negative substrate bias induced modifications of the physical properties of DC sputter deposited nano-crystalline Mo thin films

Negative bias on substrate during DC sputter deposition of nano-crystalline molybdenum thin films has been utilized to tune their properties for solar cells and the cryogenic radiation detector applications. Films have been deposited on Si substrates under different out of plane negative biases aiming to improve their physical properties such as the sheet resistance, superconducting transition temperature, width of transition and surface roughness. Significant modifications in the electrical and surface morphological properties of nano-crystalline Mo thin films have been reported. The superconducting transition temperature and crystallite size of the films does not show much improvement but the surface roughness and electrical resistivity of the film have been improved by the application of substrate bias.

physics.app-ph