arXiv subjects

Abhishek Bajgain

Publications and source records attributed to Abhishek Bajgain.

3 recordsLinked to original sources

arXiv2026

Thickness-Controlled Ferroelectric-to-Ionic Transport in CuCrP2S6 at Room Temperature

Ambient-temperature coexistence of ferroelectricity, photoconductivity, and ionic transport in ultra-thin van der Waals (vdW) compound CuCrP2S6 (CCPS) offers significant potential for multifunctional electronic, photonic, and neuromorphic applications. However, ferroelectricity and ionic transport can become antagonistic when sharing a common atomic origin, like the copper ions in CCPS. We address this fundamental dichotomy by systematically investigating the thickness-dependent evolution of ferroelectricity, ionic migration, and memristive behavior in CCPS diodes via electrostatic and photo-assisted interfacial band tuning. Using piezoresponse, Kelvin probe, and conductive atomic force microscopy, alongside photoexcited transport measurements, we identify distinct thickness regimes. CCPS flakes thinner than ~ 40 nm exhibit robust, reversible ferroelectric (FE) switching. Conversely, thicker samples display suppressed switchable polarization, with electrical conduction dominated by Cu+ migration, filamentary memristive switching, and rectification reversal. Optical illumination further enhances ionic mobility via photogenerated carriers, driving photo-assisted ionic transport in non-FE flakes and a coupled photoferroionic response in FE flakes. These findings clarify how ferroelectricity fundamentally alters ionic transport dynamics in vdW ferroionic systems.

cond-mat.mtrl-sci↗

arXiv2026

Light Polarization Sensitive Transistor Action in the van der Waals ferroelectric 4H-SnS2

Van der Waals (vdW) ferroelectric semiconductors provide a unique platform for exploring the interplay between spontaneous polarization, electronic transport, ion migration, and photocarrier generation at the nanoscale. Here, we establish a room-temperature ferroelectric state in SnS2 and its sensitivity to structural polytype by directly contrasting the centrosymmetric 2H-phase with the polar 4H-phase. Raman spectroscopy distinguishes the 2H and 4H polymorphs of SnS2 through their characteristic phonon fingerprints. Piezoresponse force microscopy confirms room-temperature ferroelectricity in the 4H phase, while the 2H phase exhibits no ferroelectric response. The built-in polarization in a three-terminal transistor device of the 4H-SnS2 is modulated significantly by electrostatic gating and on exposure to linear and circularly polarized light. This device reveals polarization-controlled output characteristics with distinct gate-voltage induced hysteretic response and thermally activated carrier transport, confirming p-type semiconducting behavior strongly coupled to ferroelectric polarization. The photoresponse likewise exhibits polarization-assisted carrier separation, sublinear power-law scaling, a nonmonotonic temperature response correlated with the characteristic Raman modes, ferroelectric hysteresis, and a pronounced dependence on the circular and linear polarization states of the incident laser beam. These results establish 4H-SnS2 as a promising material system for polarization-driven electronic and optoelectronic technologies, including nonvolatile memory and photoferroelectric functionalities.

cond-mat.mtrl-sci↗

arXiv2026

Selenization of V$_2$O$_5$/WO$_3$ Bilayers for Tuned Optoelectronic Response of WSe$_2$ Films

Scalable and controlled doping of two-dimensional transition metal dichalcogenides is essential for tuning their electronic and optoelectronic properties. In this work, we demonstrate a robust approach for substitution of vanadium in tungsten diselenide (WSe$_2$) via the selenization of pre-deposited V$_2$O$_5$/WO$_3$ thin films. By adjusting the thickness of the vanadium oxide layer, the V concentration in W$_{1-x}$V$_x$Se$_2$ is systematically varied. Electrical measurements on field-effect transistors reveal a substantial enhancement in hole conduction, with drain current increasing by nearly three orders of magnitude compared to undoped WSe$_2$. Temperature-dependent electrical resistivity indicates a clear insulator-to-metal transition with increasing V content, likely due to band structure modifications. Concurrently, the photoconductive gain decreases, suggesting enhanced recombination and charge screening effects. These results establish vanadium doping via selenization of V$_2$O$_5$/WO$_3$ films as a scalable strategy for modulating the transport and photoresponse of WSe$_2$, offering promising implications for wafer-scale optoelectronic device integration.

cond-mat.mes-hall↗