arXiv subjects

Abhishek Misra

Publications and source records attributed to Abhishek Misra.

7 recordsLinked to original sources

arXiv2025

Spin Reorientation Driven Renormalization of Spin-Phonon Coupling in Fe$_4$GeTe$_2$

Quasi-2D van der Waals ferromagnet Fe$_4$GeTe$_2$, featuring the simultaneous presence of high Curie temperature ($T_\mathrm{C}$ $\sim 270$ K) and a spin-reorientation transition at $T_\mathrm{SR}$ $\sim 110$ K, is a rare system where strong interplay of spin dynamics, lattice vibrations, and electronic structure leads to a wide range of interesting phenomena. Here, we investigate the lattice response of exfoliated Fe$_4$GeTe$_2$ nanoflakes using temperature-dependent Raman spectroscopy. Polarization-resolved measurements reveal that, while one Raman mode exhibits a purely out-of-plane character, the rest display mixed symmetry, reflecting interlayer vibrational nonuniformity and symmetry-driven mode degeneracies. Below $T_\mathrm{C}$, phonons harden, and the linewidth narrows, consistent with reduced anharmonicity, while across the spin reorientation transition at $T_\mathrm{SR}$ they display anomalous softening, linewidth broadening, and a peak in lifetime, which are signatures of strengthened spin-phonon coupling. Complementary DFT+DMFT calculations and atomistic spin dynamical simulations reveal temperature-dependent spin excitations whose energies overlap with the Raman-active phonons, providing a natural route for the observed magnon-phonon interaction. Together, these insights establish Fe$_4$GeTe$_2$ as a versatile platform for exploring intertwined spin, lattice, and electronic degrees of freedom, with relevance for dynamic spintronic and magneto-optic functionalities near technologically meaningful temperatures.

cond-mat.mes-hall↗

arXiv2025

Interfacial and bulk switching MoS2 memristors for an all-2D reservoir computing framework

In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS$_2$/Au memristive devices. The temporal dynamics is engineered by controlling the thickness of the Chemical Vapor Deposited (CVD) MoS$_2$ films. Devices with a monolayer (1L)-MoS$_2$ film exhibit volatile (short-term memory) switching dynamics. We also report non-volatile resistance switching with excellent uniformity and analog behavior in conductance tuning for the multilayer (ML) MoS$_2$ memristive devices. We correlate this performance with trap-assisted space-charge limited conduction (SCLC) mechanism, leading to a bulk-limited resistance switching behavior. Four-bit reservoir states are generated using volatile memristors. The readout layer is implemented with an array of nonvolatile synapses. This small RC network achieves 89.56\% precision in a spoken-digit recognition task and is also used to analyze a nonlinear time series equation.

cs.ET↗

arXiv2025

Revealing the Breakdown Mechanism and Heat Dissipation in Few-Layered semimetallic PtSe2

Platinum diselenide (PtSe2) is an emerging two-dimensional (2D) transition metal dichalcogenide known for its excellent electrical and optical properties, along with remarkable air stability. For PtSe2-based electronic devices, understanding high-field breakdown and heat dissipation is crucial for designing high-performance and energy-efficient systems operating under extreme conditions. In this work, we investigate the breakdown mechanisms of semimetallic PtSe2 at both low and room temperatures. Heat dissipation is quantified via interfacial thermal conductivity (ITC) of PtSe2/SiO2 and PtSe2/h-BN interfaces using Raman thermometry. Our findings indicate that at room temperature, device breakdown is predominantly governed by self-heating effects. Conversely, at low temperatures, the breakdown is mainly driven by carrier multiplication under high electric fields, as further confirmed by Hall measurements.

cond-mat.mtrl-sci↗

arXiv2021

Twisted monolayer and bilayer graphene for vertical tunneling transistors

We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.

cond-mat.mes-hall↗

arXiv2019

Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.

cond-mat.mes-hall↗

arXiv2018

Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode.

cond-mat.mes-hall↗

arXiv2016

Stacking transition in bilayer graphene caused by thermally activated rotation

Crystallographic alignment between two-dimensional crystals in van der Waals heterostructures brought a number of profound physical phenomena, including observation of Hofstadter butterfly and topological currents, and promising novel applications, such as resonant tunnelling transistors. Here, by probing the electronic density of states in graphene using graphene-hexagonal boron nitride tunnelling transistors, we demonstrate a structural transition of bilayer graphene from incommensurate twisted stacking state into a commensurate AB stacking due to a macroscopic graphene self-rotation. This structural transition is accompanied by a topological transition in the reciprocal space and by pseudospin texturing. The stacking transition is driven by van der Waals interaction energy of the two graphene layers and is thermally activated by unpinning the microscopic chemical adsorbents which are then removed by the self-cleaning of graphene.

cond-mat.mes-hall↗