arXiv subjects

Abigail Postlewaite

Publications and source records attributed to Abigail Postlewaite.

3 recordsLinked to original sources

arXiv2026

Depth-Resolved Lattice Distortions in a Silicon-Germanium Qubit Host

Semiconductor qubits, promising for quantum computation, inherit properties from their host lattice. Quantum dot spins, occupying the local lowest energy states in the conduction band, necessarily couple to structural disorder and interfaces. While silicon-based systems promise low noise alongside industrially compatible manufacturing, the growth of SiGe---a leading platform---unavoidably introduces lattice dislocations, inhomogeneous strain, and crosshatch patterns, expected to cause fluctuations between devices, qubit failure, and subsequently higher operational overhead. Through X-ray nano-structural mapping of an Intel Si/SiGe chip, we reveal, with 30$~$nm lateral and 200$~$nm functional depth resolution, how extended lattice defects introduced during growth propagate through the heterostructure, creating permanently distorted lattice planes and strain. We correlate these at the $\approx1~μ$m scale of a quantum dot device and calculate the impact on qubit energy spectra. We observe crosshatch fine structure and find that substrate miscut and growth correlate with the final crosshatch pattern.

cond-mat.mes-hall↗

arXiv2024

Nonlinear optical responses and quantum geometry in rhombohedral trilayer graphene

We theoretically study the nonlinear optical response of ABC trilayer graphene with inversion symmetry broken by the application of a displacement field perpendicular to the trilayer. We show that rhombohedral trilayer graphene exhibits a large bulk photovoltaic effect arising from a DC shift current response. The conductivity of the trilayer contains features similar to AB bilayer graphene as well as features distinct from AB bilayer graphene. The new features of ABC trilayer graphene relative to AB bilayer graphene arise from the quantum geometric features of the electronic band structure and can be tuned by varying the displacement field. We focus on a regime of displacement field where certain band gaps close and reopen away from the charge neutrality point leading to drastic changes in the quantum geometric structure in momentum space, a feature characteristic of the trilayer graphene band structure. These features manifest as a sign change in shift current conductivity in a certain frequency window and can thus serve as a probe of quantum geometry.

cond-mat.mes-hall↗

arXiv2023

Nonlinear optical responses in multi-orbital topological superconductors

We theoretically study first and second-order optical responses in a transition metal dichalcogenide monolayer with distinct trivial, nodal, and time-reversal invariant topological superconducting (TRITOPS) phases. We show that the second-order DC response, also known as the photogalvanic response, contains signatures for differentiating these phases while the first-order optical response does not. We find that the high-frequency photogalvanic response is insensitive to the phase of the system, while the low-frequency response exhibits features distinguishing the three phases. At zero doping, corresponding to an electron filling in which the Fermi level lies at nodal points, there are opposite sign zero-frequency divergences in the response when approaching the nodal phase boundaries from the trivial and the TRITOPS phases. In the trivial phase, both the high-frequency and low-frequency response of the system are negative, but in the TRITOPS phase, the low-frequency response becomes positive while the high-frequency response remains negative. Furthermore, since phase transitions are controlled by the Rashba spin-orbit coupling and the ratio of intra-orbital and inter-orbital paring amplitudes, our results not only help distinguish the phases but can also provide an estimate of the pairing amplitudes based on the photogalvanic response of the system.

cond-mat.supr-con↗