arXiv subjects

Achilleas Savva

Publications and source records attributed to Achilleas Savva.

9 recordsLinked to original sources

arXiv2019

Inverted Perovskite Photovoltaics using Flame Spray Pyrolysis Solution based CuAlO2/Cu-O Hole Selective Contact

We present the functionalization process of a conductive and transparent copper aluminum oxide, copper oxide alloy. The copper aluminum oxide, copper oxide powders were developed by flame spray pyrolysis and their stabilized dispersions were treated by sonication and centrifugation methods. We show that when the supernatant part of the treated copper aluminum oxide, copper oxide dispersions is used for the development of hole transporting layers the corresponding inverted perovskite solar cells show improved functionality and power conversion efficiency with negligible hysteresis effect.

physics.app-ph↗

arXiv2018

Employing surfactant-assisted hydrothermal synthesis to control CuGaO2 nanoparticle formation and improved carrier selectivity of perovskite solar cells

Delafossites like CuGaO2 have appeared as promising p-type semiconductor materials for opto-electronic applications mainly due to their high optical transparency and electrical conductivity. However, existing synthetic efforts usually result in particles with large diameter limiting their performance relevant to functional electronic applications. In this article, we report a novel surfactant-assisted hydrothermal synthesis method, which allows the development of ultrafine (~5 nm) monodispersed p-type CuGaO2 nanoparticles (NPs). We show that DMSO can be used as a ligand and dispersing solvent for stabilizing the CuGaO2 NPs. The resulting dispersion is used for the fabrication of dense, compact functional CuGaO2 electronic layer with properties relevant to advanced optoelectronic applications. As a proof of concept, the surfactant-assisted hydrothermal synthesized CuGaO2 is incorporated as a hole transporting layer (HTL) in the inverted p-i-n perovskite solar cell device architecture providing improved hole carrier selectivity and power conversion efficiency compared to conventional PEDOT:PSS HTL based perovskite solar cells.

physics.app-ph↗

arXiv2018

Influence of the Hole Transporting Layer on the Thermal Stability of Inverted Organic Photovoltaics Using Accelerated Heat Lifetime Protocols

High power conversion efficiency (PCE) inverted organic photovoltaics (OPVs) usually use thermally evaporated MoO3 as a hole transporting layer (HTL). Despite the high PCE values reported, stability investigations are still limited and the exact degradation mechanisms of inverted OPVs using thermally evaporated MoO3 HTL remain unclear under different environmental stress factors. In this study, we monitor the accelerated lifetime performance of non-encapsulated inverted OPVs using thiophene-based active layer materials and evaporated MoO3 under the ISOS D-2 protocol (heat conditions 65 °C). The investigation of degradation mechanisms presented focus on optimized P3HT:PC[70]BM-based inverted OPVs. Specifically, we present a systematic study on the thermal stability of inverted P3HT:PC[70]BM OPVs using solution processed PEDOT:PSS and evaporated MoO3 HTL. Using a series of measurements and reverse engineering methods we report that the P3HT:PC[70]BM/MoO3 interface is the main origin of failure of P3HT:PC[70]BM-based inverted OPVs under intense heat conditions.

physics.app-ph↗

arXiv2018

Room Temperature Nanoparticulate Interfacial Layers for Perovskite Solar Cells via solvothermal synthesis

We present a solvothermal synthetic route to produce monodispersed CuO nanoparticles (NPs) in the range of 5-10 nm that can be used as hole selective interfacial layer between indium tin oxide (ITO) and perovskite active layer for p-i-n perovskite solar cells by a spin casting the dispersions at room temperature. The bottom electrode interface modification provided by spherical CuO-NPs at room temperature promotes the formation of high quality perovskite photoactive layers with large crystal size and strong optical absorption. Furthermore, it is shown that the nanoparticulate nature of the CuO hole transporting interfacial layer can be used to improve light manipulation within perovskite solar cell device structure. The corresponding p-i-n CH3NH3PbI3-based solar cells show high Voc values of 1.09 V, which is significantly higher compared to the Voc values obtained with conventional PEDOT:PSS hole selective contact based perovskite solar cells.

physics.app-ph↗

arXiv2018

The Effect of Hole Transporting Layer in Charge Accumulation Properties of p-i-n Perovskite Solar Cells

The charge accumulation properties of p-i-n perovskite solar cells were investigated using three representative organic and inorganic hole transporting layer (HTLs): a) Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS, Al 4083), b) copper-doped nickel oxide (Cu:NiOx) and c) Copper oxide (CuO). Through impedance spectroscopy analysis and modelling it is shown that charge accumulation is decreased in the HTL/Perovskite interface, between PEDOT:PSS to Cu:NiOx and CuO respectively. This was indicative from the decrease in double layer capacitance (Cdl) and interfacial charge accumulation capacitance (Cel), resulting in an increase to recombination resistance (Rrec), thus decreased charge recombination events between the three HTLs. Through AFM measurements it is also shown that the reduced recombination events (followed by the increase in Rrec) is also a result of increased grain size between the three HTLs, thus reduction in the grain boundaries area. These charge accumulation properties of the three HTLs have resulted in an increase to the power conversion efficiency between the PEDOT:PSS (8.44%), Cu:NiOx (11.45%) and CuO (15.3%)-based devices.

physics.app-ph↗

arXiv2018

The influence of additives in the stoichiometry of hybrid lead halide perovskites

We investigate the employment of carefully selected solvent additives in the processing of a commercial perovskite precursor ink and analyze their impact on the performance of organometal trihalide perovskite photovoltaic devices. We provide evidence that the use of benzaldehyde can be used as an effective method to preserve the stoichiometry of the perovskite precursors in solution. Benzaldehyde based additive engineering shows to improve perovskite solid state film morphology and device performance of trihalide perovskite based solar cells.

physics.app-ph↗

arXiv2016

High Performance Inverted Organic Photovoltaics Without Hole Selective Contact

A detailed investigation of the functionality of inverted organic photovoltaics (OPVs) using bare Ag contacts as top electrode is presented. The inverted OPVs without hole transporting layer (HTL) exhibit a significant gain in hole carrier selectivity and power conversion efficiency (PCE) after exposure in ambient conditions. Inverted OPVs comprised of ITO/ZnO/poly(3-hexylthiophene-2,5-diyl):phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/Ag demonstrate over 3.5% power conversion efficiency only if the devices are exposed in air for over 4 days. As concluded through a series of measurements, the oxygen presence is essential to obtain fully operational solar cell devices without HTL. Moreover, accelerated stability tests under damp heat conditions (RH=85% and T=65oC) performed to non-encapsulated OPVs demonstrate that HTL-free inverted OPVs exhibit comparable stability to the reference inverted OPVs. Importantly, it is shown that bare Ag top electrodes can be efficiently used in inverted OPVs using various high performance polymer:fullerene bulk heterojunction material systems demonstrating 6.5% power conversion efficiencies.

cond-mat.mtrl-sci↗

arXiv2016

Improved Performance and Reliability of p-i-n Perovskite Solar Cells via Doped Metal Oxides

Perovskite photovoltaics (PVs) have attracted attention because of their excellent power conversion efficiency (PCE). Critical issues related to large area PV performance, reliability and lifetime need to be addressed. Here, we show that doped metal oxides can provide ideal electron selectivity, improved reliability and stability for perovskite PVs. We report p-i-n perovskite PVs with device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminum doped zinc oxide (AZO) electron selective contact with hysteresis-free PCE of over 13% and high fill factor values in the range of 80%. AZO provides suitable energy levels for carrier selectivity, neutralizes the presence of pinholes and provides intimate interfaces. Devices using AZO exhibit an average PCE increase of over 20% compared with the devices without AZO and maintain the high PCE for the larger area devices reported. Furthermore, the device stability of p-i-n perovskite solar cells under the ISOS-D-1 is enhanced when AZO is used, and maintains 100% of the initial PCE for over 1000 hours of exposure when AZO/Au is used as the top electrode. Our results indicate the importance of doped metal oxides as carrier selective contacts to achieve reliable and high performance long lived large area perovskite solar cells.

cond-mat.mtrl-sci↗

arXiv2014

Characterization of solution processed TiOx buffer layers in inverted organic photovoltaics by XPS and DFT studies

We present the results of XPS measurements (core levels and valence bands) of solution processed TiOx thin films prepared from titanium butoxide (C16H36O4Ti) diluted in isopropanol which is a common sol-gel route for fabricating TiOx electron selective contacts for ITO/TiOx inverted organic photovoltaics bottom electrodes. XPS Ti 2p and valence band spectra show the presence of additional features which are absent in spectra of titanium butoxide deposited on Si and are attributed to appearance of Ti^{3+} valence states in ITO/TiOx. This conclusion is confirmed by density functional theory electronic structure calculations of stoichiometric TiO2 and oxygen deficient TiO_{2-1/8}. XPS C 1s measurements show the formation of C-O and O-C=O bonds which evidence the presence of residual carbon which can draw oxygen from the film network and induce the formation of fraction of Ti3+ states in TiOx films.

cond-mat.mtrl-sci↗