arXiv subjects

Achintya Singha

Publications and source records attributed to Achintya Singha.

At least 19 recordsLinked to original sources

arXiv2026

Spin-phonon interaction in a symmetry-enforced spin-polarized state

Symmetry-governed magnetic materials have emerged as a promising platform for spintronic functionalities without net magnetization or stray magnetic fields, motivating the exploration of how lattice dynamics couple to symmetry-derived spin-polarized electronic states. Understanding spin-phonon coupling in these systems is therefore essential for uncovering the microscopic origin of spin-lattice interactions and for enabling their control in quantum materials. However, this mechanism remains poorly understood because spin polarization originates from crystal symmetry rather than conventional magnetic order. Here, we address this issue in the g-type altermagnet CoNb4Se8 using temperature- and polarization-resolved Raman spectroscopy, complemented by measurements on a structurally analogous Co-deficient compound lacking well-defined long-range magnetic order. We observe pronounced symmetry-selective phonon renormalization across the magnetic transition in CoNb4Se8, while related phonon anomalies persist in the Co-deficient system, demonstrating that the lattice response cannot be explained solely by conventional exchange-striction associated with coherent magnetic ordering. First-principles calculations reveal that spin-orbit coupling establishes a symmetry-dependent interaction channel between lattice vibrations and symmetry-governed electronic states. Our results identify an alternative mechanism for spin-phonon coupling in symmetry-governed magnetic materials and demonstrate that phonons provide a sensitive probe of symmetry-driven spin polarization even without robust magnetic order. More broadly, this work provides a framework for understanding and engineering spin-lattice functionality in symmetry-driven quantum materials, offering design principles for coupling lattice dynamics to spin-polarized electronic states.

cond-mat.mtrl-sci↗

arXiv2026

Intrinsic Electric Field Driven High Sensitive Photodetection in Alloy TMDC MoSSe

Alloying offers an effective way to improve the functionality of transition metal dichalcogenides (TMDCs) in both fundamental research and optoelectronic applications, as it allows for engineering their electronic and optical properties. This study investigates the optoelectronic properties of CVD-synthesized alloy MoSSe, which exhibits an inherent out-of-plane dipole moment, arising from asymmetry in S and Se atoms on either side of the Mo layer, as confirmed by piezoelectric force microscopy, polarization-resolved second harmonic generation studies and theoretical first-principles calculations. Time-resolved photoluminescence measurements reveal an extended exciton radiative recombination lifetime in MoSSe, attributed to electron-hole wavefunction separation by the dipole moment, which improves photodetection by facilitating enhanced electron-hole separation before recombination. The device demonstrates significant responsivity over broad spectral range. By employing the photogating effect, the device response can be switched from slow to fast modes. These findings are further supported by illumination intensity-dependent photoluminescence and Raman measurements, underscoring the potential of polar TMDCs in future optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Spin Reorientation Driven Renormalization of Spin-Phonon Coupling in Fe$_4$GeTe$_2$

Quasi-2D van der Waals ferromagnet Fe$_4$GeTe$_2$, featuring the simultaneous presence of high Curie temperature ($T_\mathrm{C}$ $\sim 270$ K) and a spin-reorientation transition at $T_\mathrm{SR}$ $\sim 110$ K, is a rare system where strong interplay of spin dynamics, lattice vibrations, and electronic structure leads to a wide range of interesting phenomena. Here, we investigate the lattice response of exfoliated Fe$_4$GeTe$_2$ nanoflakes using temperature-dependent Raman spectroscopy. Polarization-resolved measurements reveal that, while one Raman mode exhibits a purely out-of-plane character, the rest display mixed symmetry, reflecting interlayer vibrational nonuniformity and symmetry-driven mode degeneracies. Below $T_\mathrm{C}$, phonons harden, and the linewidth narrows, consistent with reduced anharmonicity, while across the spin reorientation transition at $T_\mathrm{SR}$ they display anomalous softening, linewidth broadening, and a peak in lifetime, which are signatures of strengthened spin-phonon coupling. Complementary DFT+DMFT calculations and atomistic spin dynamical simulations reveal temperature-dependent spin excitations whose energies overlap with the Raman-active phonons, providing a natural route for the observed magnon-phonon interaction. Together, these insights establish Fe$_4$GeTe$_2$ as a versatile platform for exploring intertwined spin, lattice, and electronic degrees of freedom, with relevance for dynamic spintronic and magneto-optic functionalities near technologically meaningful temperatures.

cond-mat.mes-hall↗

arXiv2025

Brightening of dark trions in monolayer WS$_2$ via localization of surface plasmons

Among all excitonic complexes in transition-metal dichalcogenides (TMDs), dark and semi-dark trions are poised to play a stellar role in future quantum technologies due to their long lifetimes, about two orders of magnitude greater than those of their bright counterparts. In monolayer (ML) tungsten disulphide (WS$_2$), accessing these states via a suitable brightening mechanism remains challenging, specially, at elevated temperatures. Here, we demonstrate the brightening of dark trions from ML WS$_2$ over the temperature range, 83 K-115 K, enabled by localized surface plasmon modes in a disordered gold substrate. The resulting photoluminescence (PL) spectrum reveals a distinct spectral doublet with the twin peaks of semi-dark and bright trion states, separated by $\sim$ 45 meV. The origin of the semi-dark trion state lies in intervalley electron-electron scatterings, while its visibility in the PL spectrum is made possible by the enhanced out-of-plane electromagnetic field associated with plasmon localization. We also report on the negative degree of circular polarization in ML WS$_2$ at the energy of the semi-dark trion state. Our results establish a scalable plasmonic route to access valley-polarized semi-dark trions, opening new opportunities for quantum and valleytronic applications.

cond-mat.mes-hall↗

arXiv2025

Alloying as a new route to generating interlayer excitons

Heterobilayers formed by stacking two-dimensional atomic crystals are particularly promising for low-dimensional semiconductor optics, as they host interlayer excitons, bound states of electrons and holes residing in different layers. They inherit the valley-contrasting physics of the individual monolayers, leading to a range of unique properties that distinguish them from other solid-state nanostructures. Here, we propose a novel route for the generation of interlayer excitons based on the synthesis of a transition metal dichalcogenide bilayer alloy material, WS$_{2x}$Se$_{2(1-x)}$. Using piezoelectric force microscopy, we demonstrate the existence of an internal electric field oriented in the out-of-plane direction. Interlayer excitons have so far been mostly observed in heterostructures with a type-II band alignment. In the presence of an internal electric field, a similar alignment occurs in the alloy bilayer resulting in an efficient generation of interlayer excitons. Photoluminescence spectroscopy measurements involving circularly polarised light come up with key observations like a negative degree of circular polarization of the interlayer excitons which increases as a function of temperature. A simple theoretical model provides a physical understanding of the major experimentally observed features. With experimentally fitted parameter values, the dominant contribution to the degree of circular polarization is shown to arise from spin polarization and not from valley polarization, a consequence of the spin-valley-layer coupling characteristic of a TMDC bilayer. The room-temperature interlayer excitonic transition in bilayer TMDCs has key implications for fundamental physics, including Bose-Einstein condensation and high-temperature superfluidity, while enabling advanced valleytronic and quantum information functionalities.

cond-mat.mes-hall↗

arXiv2023

Valley polarization and photocurrent generation in transition metal dichalcogenide alloy MoS$_{2x}$Se$_{2(1-x)}$

Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures has been extensively investigated, less attention was given to TMDC alloys, which could be useful in optoelectronic applications due to the tunability of their band gaps. We report here our experimental investigations of the spin-valley physics of the monolayer and bilayer TMDC alloy, MoS$_{2x}$Se$_{2(1-x)}$, in terms of valley polarization and the generation as well as electrical control of a photocurrent utilising the circular photogalvanic effect. Piezoelectric force microscopy provides evidence for an internal electric field perpendicular to the alloy layer, thus breaking the out-of-plane mirror symmetry. The experimental observation is supported by first principles calculations based on the density functional theory. A comparison of the photocurrent device, based on the alloy material, is made with similar devices involving other TMDC materials.

cond-mat.mes-hall↗

arXiv2023

Rings of functions which are discontinuous on a finite set with countable range

Consider the ring $C_c(X)_F$ of real valued functions which are discontinuous on a finite set with countable range. We discuss $(\mathcal{Z}_c)_F$-filters on $X$ and $(\mathcal{Z}_c)_F$-ideals of $C_c(X)_F$. We establish an analogous version of Gelfand-Kolmogoroff theorem in our setting. We prove some equivalent conditions when $C_c(X)_F$ is a Baer-ring and a regular ring. Lastly, we talk about the zero divisor graph on $C_c(X)_F$.

math.GN↗

arXiv2021

Raman spectroscopy of group-IV Ge$_{1-x}$Sn$_{x}$ alloys: theory and experiment

Ge$_{1-x}$Sn$_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here, we present a combined theoretical and experimental analysis of Raman spectroscopy in Ge$_{1-x}$Sn$_{x}$ alloys. We describe liquid-vapour-solid growth and structural characterisation of Ge$_{1-x}$Sn$_{x}$ ($x \leq 8$%) nanowires displaying high crystalline quality, and investigate the structural and vibrational properties of the nanowires using Raman spectroscopy. Our theoretical analysis is based on a fully analytic anharmonic valence force field (VFF) potential, which describes exactly - i.e. without recourse to numerical fitting - the second-order elastic constants, third-order bulk modulus, selected second- and third-order inner elastic constants and, as a consequence, the zone-centre transverse optical phonon mode frequency and its hydrostatic and axial strain dependence. We compute bulk elastic properties via density functional theory to parametrise the VFF potential for Ge$_{1-x}$Sn$_{x}$ alloys, and apply the VFF potential to explicitly compute the Raman spectra of realistic, disordered Ge$_{1-x}$Sn$_{x}$ alloy supercells. Our atomistic theoretical calculations quantitatively capture: (i) the evolution of the measured Raman spectra with Sn composition $x$, (ii) demonstrate explicitly that the presence of short-range alloy disorder can significantly impact the shift coefficients $a$ and $b$ that respectively describe the dependence of the Raman shift on Sn composition and pseudomorphic strain, (iii) elucidate the origin of the so-called "disorder activated" mode identified in previous experimental investigations, and (iv) allow for detailed atomic-scale interpretation of measured Raman spectra. Overall, our analysis provides insight relevant to the characterisation of this emerging material system.

cond-mat.mtrl-sci↗

arXiv2020

Lattice dynamics of topological Dirac semimetal LaAgSb$_{2}$ with charge density wave ordering

LaAgSb$_{2}$ is a rare material, which offers the opportunity to investigate the complex interplay between charge density wave (CDW) ordering and topology protected electronic band structure. As both of these phenomena are governed by the structural symmetries, a comprehensive study of the lattice dynamics is highly desirable. In this report, we present the results of temperature and pressure dependent Raman spectroscopy and x-ray diffraction in single crystalline LaAgSb$_{2}$. Our results confirm that Raman spectroscopy is a highly sensitive tool to probe CDW ordering phenomenon, particularly the low-temperature second CDW transition in LaAgSb$_{2}$, which appears as a very weak anomaly in most experiments. The crystal orientation-dependent measurements provide the evolution of Raman modes with crystallographic symmetries and can be further studied through group symmetry analysis. The low-temperature x-ray diffraction data show the emergence of structural modulations corresponding to the CDW instability. The combined high-pressure Raman spectroscopy and synchrotron x-ray diffraction reveal multiple structural phase transitions through lowering of crystalline symmetries, which are also expected to lead to electronic topological transitions.

cond-mat.mtrl-sci↗

arXiv2020

Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by Oxygen ion implantation

The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped single crystalline Ge wafer of orientation (100). Oxygen ions of energy 200 keV were implanted. The implanted wafer was subjected to Rapid Thermal Annealing to 650 C. The resulting wafer has a top crystalline Ge layer of 220 nm thickness and Buried Oxide layer (BOX) layer of good quality crystalline Germanium oxide with thickness around 0.62 micron. The crystalline BOX layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy, cross-sectional HRTEM with SAED and EDS established that the top Ge layer was recrystallized during annealing with faceted crystallites. The top layer has a small tensile strain of around +0.4\% and has estimated dislocation density of 2.7 x 10^{7}cm^{-2}. The thickness, crystallinity and electrical characteristics of the top layer and the quality of the BOX layer of GeO_{2} are such that it can be utilized for device fabrication.

cond-mat.mtrl-sci↗

arXiv2020

Enhanced broad band photoresponse of a partially suspended horizontal array of Silicon microlines fabricated on Silicon-On-Insulator wafers

We report a high Responsivity broad band photo-detector working in the wavelength range 400 nm to 1100 nm in a horizontal array of Si microlines (line width ~1 micron) fabricated on a Silicon-on-Insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 18 A/W at 800 nm, at a bias of 1V which is more than an order of magnitude of the Responsivity in a commercial Si detector. In a broad band of 400 nm to 1000 nm the Responsivity of the detector is in excess of 10A/W. We found that the suspension of the microlines in the array is necessary to obtain such high Responsivity. The suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photo-response. This has been validated through simulation. By using focused illumination of selected parts of a single microline of the array, we could isolate the contributions of the different parts of the microline to the photo-current.

physics.app-ph↗

arXiv2018

Probing lattice dynamics and electron-phonon coupling in topological nodal-line semimetal ZrSiS

Topological materials provide an exclusive platform to study the dynamics of relativistic particles in table-top experiments and offer the possibility of wide-scale technological applications. ZrSiS is a newly discovered topological nodal-line semimetal and has drawn enormous interests. In this report, we have investigated the lattice dynamics and electron-phonon interaction in single crystalline ZrSiS using Raman spectroscopy. Polarization and angle resolved measurements have been performed and the results have been analyzed using crystal symmetries and theoretically calculated atomic vibrational patterns along with phonon dispersion spectra. Wavelength and temperature dependent measurements show the complex interplay of electron and phonon degrees of freedom, resulting in resonant phonon and quasielastic electron scatterings through inter-band transitions. Our high-pressure Raman studies reveal vibrational anomalies, which were further investigated from the high-pressure synchrotron x-ray diffraction (HPXRD) spectra. From HPXRD, we have clearly identified pressure-induced structural transitions and coexistence of multiple phases, which also indicate possible electronic topological transitions in ZrSiS. The present study not only provides the fundamental information on the phonon subsystem, but also sheds some light in understanding the topological nodal-line phase in ZrSiS and other iso-structural systems.

cond-mat.mtrl-sci↗

arXiv2014

Raman scattering study of InAs nanowire under high pressure

The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase linearly while the LO TO splitting decreases with pressure. The recorded Raman modes have been used to determine the mode Gruneisen parameters and also the value of Borns transverse effective charge. The calculated Borns transverse effective charge exhibits a linear reduction with increasing pressure implying an increase in covalency of nanowires under compression. The intensity of the Raman modes shows a strong enhancement as the energy of E1 band gap approaches the excitation energy, which has been discussed in terms of resonant Raman scattering. An indication of structural phase transformation has been observed above pressure 10.87 GPa. We propose this transformation may be from wurtzite to rock salt phase although further experimental and theoretical confirmations are needed.

cond-mat.mes-hall↗

arXiv2012

Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.

cond-mat.mes-hall↗

arXiv2011

Raman sensitivity to crystal structure in InAs nanowires

We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.

cond-mat.mes-hall↗

arXiv2011

Probing the spin states of three interacting electrons in quantum dots

We observe a low-lying sharp spin mode of three interacting electrons in an array of nanofabricated AlGaAs/GaAs quantum dots by means of resonant inelastic light scattering. The finding is enabled by a suppression of the inhomogeneous contribution to the excitation spectra obtained by reducing the number of optically-probed quantum dots. Supported by configuration-interaction calculations we argue that the observed spin mode offers a direct probe of Stoner ferromagnetism in the simplest case of three interacting spin one-half fermions.

cond-mat.mes-hall↗

arXiv2010

Correlated electrons in optically-tunable quantum dots: Building an electron dimer molecule

We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we identify the inter-shell excitations in the one-electron regime and the distinct spin and charge modes in the interacting few-body configuration. In the case of two electrons a comparison with configuration-interaction calculations allows us to link the observed excitations with the breathing mode of the molecular dimer and to determine the singlet-triplet energy splitting.

cond-mat.mes-hall↗

arXiv2008

Optical Anisotropy of Electronic Excitations in Elliptical Quantum Dots

The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed anisotropies are revealed by inelastic light scattering as a function of the in-plane direction of light polarization and can be finely controlled by modifying the geometrical shape of the QDs. These experiments show that the tuning of the QD confinement potential offers a powerful method to manipulate electronic states and far-infrared inter-shell optical transitions in quantum dots.

cond-mat.mes-hall↗