arXiv subjects

Adrian Greichgauer

Publications and source records attributed to Adrian Greichgauer.

3 recordsLinked to original sources

arXiv2026

Imaging geometry- and phase-controlled spectra in a surface-state Andreev cavity

Andreev cavities provide a setting in which superconducting proximity spectra are shaped by phase-coherent electron-hole motion along extended trajectories. While such Andreev physics is well established in transport, local spectra in two-dimensional cavities remain largely unexplored in real space. Here we use scanning tunnelling spectroscopy to study confined Cu(111) surface states coupled to superconducting Nb(110). The in-plane magnetic-field scale for the collapse of the resolved low-energy spectrum is controlled by the transverse extent available to Andreev trajectories, while the zero-field excitation energy evolves with the characteristic trajectory length. These trends, together with spatial variations within individual islands and the response to vortex phase textures, are captured by a minimal semiclassical phase-accumulation picture. Our results identify geometry-defined Andreev trajectories as a design principle for phase-coherent superconducting cavities accessible by local spectroscopy.

cond-mat.supr-con↗

arXiv2025

Ex Situ Fabrication of Superconducting Nanostructures for Low-Temperature STM

Nanofabrication of topological insulator (TI) devices is essential for accessing edge and interface states, but conventional lithography and etching compromise the atomically clean surfaces required for scanning tunneling microscopy and spectroscopy (STM/STS). We demonstrate a fabrication strategy that combines ex situ lithographic patterning with in situ ultrahigh-vacuum cleaving and flipping, yielding atomically clean, nanopatterned TI-superconductor heterostructures suitable for STM/STS. In Design I, nanoribbons were defined by etching trenches into a TI film and capping with Nb. This enabled spectroscopy on large areas, although edge quality was limited by etch debris. In Design II, local thinning defined buried nanoribbons within a continuous TI film, producing pristine planar surfaces. STM/STS revealed well-developed superconducting gaps in the surrounding film, with suppressed gaps on the nanoribbons, consistent with vertical proximity coupling. This approach establishes a reproducible pathway for high-resolution STM/STS studies of proximitized nanostructures, providing a scalable platform for exploring topological superconductivity.

cond-mat.mtrl-sci↗

arXiv2024

Characterizing the chemical potential disorder in the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films

We use scanning tunneling microscopy and spectroscopy under ultra-high vacuum and down to 1.7 K to study the local variations of the chemical potential on the surface of the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films (thickness 7 - 30 nm) with varying Sb-concentration $x$, to gain insight into the charge puddles formed in thin films of a compensated topological insulator. We found that the amplitude of the potential fluctuations, $\Gamma$, is between 5 to 14 meV for quasi-bulk conducting films and about 30 - 40 meV for bulk-insulating films. The length scale of the fluctuations, $\lambda$, was found to span the range of 13 - 54 nm, with no clear correlation with $\Gamma$. Applying a magnetic field normal to the surface, we observe the condensation of the two-dimensional topological surface state into Landau levels and find a weak but positive correlation between $\Gamma$ and the spectral width of the Landau-level peaks, which suggests that quantum smearing from drift motion is the source of the Landau level broadening. Our systematic measurements give useful guidelines for realizing $(\mathrm{Bi}_{1-x}\mathrm{Sb}_x)_2\mathrm{Te}_3$ thin films with an acceptable level of potential fluctuations. In particular, we found that $x\approx 0.65$ realizes the situation where $\Gamma$ shows a comparatively small value of 14 meV and the Dirac point lies within $\sim$10 meV of the Fermi energy.

cond-mat.mes-hall↗