arXiv subjects

Adriana Alieva

Publications and source records attributed to Adriana Alieva.

3 recordsLinked to original sources

arXiv2020

Raman Fingerprints of Graphene Produced by Anodic Electrochemical Exfoliation

Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and different types of solvents in varying amounts. We demonstrate that no information on the thickness can be extracted from the shape of the 2D peak as this type of graphene is defective. Furthermore, the number of defects and the uniformity of the samples strongly depend on the experimental conditions, including post-processing. Under specific conditions, formation of short conductive trans-polyacetylene chains has been observed. Our Raman analysis provides guidance for the community on how to get information on defects coming from electrolyte, temperature and other experimental conditions, by making Raman spectroscopy a powerful metrology tool.

physics.app-ph↗

arXiv2019

Water-based and Inkjet Printable Inks made by Electrochemically Exfoliated Graphene

Inkjet printable graphene inks are very attractive for applications in flexible and foldable electronics, such as wearable electronics and the Internet of Things. However, the ink preparation is still very time consuming as high concentrations can be achieved only with prolonged sonication (>24 hours) or with expensive setups. Here we demonstrate a water-based inkjet printable ink made from electrochemically exfoliated graphene. A printable and stable (> 1 month) ink with concentration of ~2.25 mg mL-1 was formulated in less than 5 hrs, using two successive steps: first exfoliation and dispersion of large graphene flakes (> 5 um) followed by 1 hour tip-sonication to reduce the flake size below 1 um, as required for the material to be ejected by the nozzle. The formulated ink contains more than 75% single- and few-layers (i.e. less than 2 nm in thickness) graphene flakes with an average lateral size of 740 nm. Thermal annealing allows to achieve high C/O ratio (>10), which translates into one of the highest electrical conductivity (~3.91 x 104 S m-1) reported so far for solution-processed graphene, without the use of any harsh chemical processing.

physics.app-ph↗

arXiv2018

All-2D Material Inkjet-Printed Capacitors: Towards Fully-Printed Integrated Circuits

A well-defined insulating layer is of primary importance in the fabrication of passive (e.g. capacitors) and active (e.g. transistors) components in integrated circuits. One of the most widely known 2-Dimensional (2D) dielectric materials is hexagonal boron nitride (hBN). Solution-based techniques are cost-effective and allow simple methods to be used for device fabrication. In particular, inkjet printing is a low-cost, non-contact approach, which also allows for device design flexibility, produces no material wastage and offers compatibility with almost any surface of interest, including flexible substrates. In this work we use water-based and biocompatible graphene and hBN inks to fabricate all-2D material and inkjet-printed capacitors. We demonstrate an areal capacitance of 2.0 \pm 0.3 nF cm^(-2) for a dielectric thickness of \sim 3 μm and negligible leakage currents, averaged across more than 100 devices. This gives rise to a derived dielectric constant of 6.1 \pm 1.7. The inkjet printed hBN dielectric has a breakdown field of 1.9 \pm 0.3 MV cm^(-1). Fully printed capacitors with sub-/mu m hBN layer thicknesses have also been demonstrated. The capacitors are then exploited in two fully printed demonstrators: a resistor-capacitor (RC) low-pass filter and a graphene-based field effect transistor.

physics.app-ph↗