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Afzal Khan

Publications and source records attributed to Afzal Khan.

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Preferred Synthesis of Armchair Transition Metal Dichalcogenide Nanotubes

In this work, we present the synthesis of transition-metal dichalcogenide (TMDC) nanotubes with a preferred chiral angle. SnS2, MoS2, and WS2 are formed with high yield and structural purity inside the channels of boron nitride nanotubes. Atomic-resolution imaging, nano-area electron diffraction, and Circular Dichroism spectroscopy reveal that these synthesized TMDC nanotubes prefer to have an armchair configuration, with a probability up to 84%. Density functional theory reveals a negligible difference in the formation energy between armchair and zigzag nanotubes, suggesting that the chirality preference does not originate from the differences in structural stability. However, a detailed TEM investigation revealed that these TMDC nanotubes formed via a transition state of nanoribbons, and these nanoribbons are energetically more stable in a zigzag configuration. Subsequent machine learning potential molecular dynamics simulations verify that zigzag nanoribbons do roll up to form an armchair SnS2 nanotubes. Finally, this "zigzag nanoribbon to armchair nanotube" transition process is directly observed in real time by in-situ transmission electron microscopy. This work demonstrates the first, but likely general, experimental strategy for synthesizing chirality-preferred TMDC nanotubes.

cond-mat.mtrl-sci

Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films

Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, which can be costly and prone to issues like film or substrate damage, under-etching, over-etching, and lateral etching. In this study, we introduce a dual-lift-off method for direct patterning of oxide films, circumventing the etching process and associated issues. Our method involves an initial lift-off of amorphous Sr$_3$Al$_2$O$_6$ or Sr$_4$Al$_2$O$_7$ ($a$SAO) through stripping the photoresist, followed by a subsequent lift-off of the functional oxide thin films by dissolving the $a$SAO layer. $a$SAO functions as a ``high-temperature photoresist", making it compatible with the high-temperature growth of monocrystalline oxides. Using this method, patterned ferromagnetic La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and ferroelectric BiFeO$_3$ were fabricated, accurately mirroring the shape of the photoresist. Our study presents a straightforward, flexible, precise, environmentally friendly, and cost-effective method for patterning high-quality oxide thin films.

cond-mat.mtrl-sci