arXiv subjects

Ahmad A. Awad

Publications and source records attributed to Ahmad A. Awad.

At least 19 recordsLinked to original sources

arXiv2026

Reconfigurable field-free spin Hall nano-oscillators enabled by crystallographic anisotropy in epitaxial Co/Pt

Spin Hall nano-oscillators (SHNOs) are nanoscale microwave sources for wireless communication, neuromorphic computing and oscillator-based Ising machines, but conventional devices require a global magnetic bias. Here we replace this bias through crystallographic anisotropy in epitaxial Co/Pt. Growth of hcp Co with its c-axis in the film plane produces an anisotropy field of about 0.36 T and enables field-free auto-oscillations above 10 GHz in nanoconstriction SHNOs. The active current polarity is selected by the remanent magnetization, providing nonvolatile reconfiguration of the oscillation state. Micro-focused Brillouin light scattering confirms that the nonlinear response is confined to the nanoconstriction region. Lithographic control of the angle between the current and anisotropy axes tunes the excitation threshold and drives two spectral branches from separated modes to a dominant single branch, consistent with mutual synchronization. These results establish epitaxial crystallographic anisotropy as a route to reconfigurable field-free spintronic oscillators and oscillator networks.

cond-mat.mes-hall↗

arXiv2026

Spin-Orbital Hall Nano-Oscillators using PtCr/NiFe

The orbital Hall effect provides a promising route for generating angular-momentum currents beyond conventional spin Hall physics. PtCr alloys exhibit unusually large current-induced torques, but the contribution of orbital transport and the ability of these torques to sustain coherent nonlinear magnetization dynamics remain unresolved. Here we demonstrate spin-orbital Hall nano-oscillators by exploiting a homogeneous heavy-metal/light-metal alloy in which orbital Hall currents generated by Cr are converted by Pt into spin currents, producing giant spin-orbit torques. Using PtCr/NiFe heterostructures, the effective torque efficiency increases from ~0.14 in Pt/NiFe to ~0.40 in Pt0.38Cr0.62/NiFe despite substantial Pt dilution, enabling coherent auto-oscillations with the threshold current density reduced from ~ 1.07 x 10^12 to ~ 4.4 x 10^11 A m^-2. First-principles calculations show that Cr alloying suppresses the intrinsic spin Hall conductivity while enhancing the orbital Hall conductivity, and reproduce the observed torque enhancement only when orbital transport is included. Our combined experimental and first-principles results show that alloy engineering enables giant spin-orbit torques through an intrinsic orbital-mediated contribution, enabling coherent auto-oscillations without engineered multilayers and establishing a scalable materials platform for low-power nonlinear spintronic and orbitronic devices.

cond-mat.mes-hall↗

arXiv2025

Ultra-large mutually synchronized networks of 10 nm spin Hall nano-oscillators

While mutually interacting spin Hall nano-oscillators (SHNOs) hold great promise for wireless communication, neural networks, neuromorphic computing, and Ising machines, the highest number of synchronized SHNOs remains limited to $N$ = 64. Using ultra-narrow 10 and 20-nm nano-constrictions in W-Ta/CoFeB/MgO trilayers, we demonstrate mutually synchronized SHNO networks of up to $N$ = 105,000. The microwave power and quality factor scale as $N$ with new record values of 9 nW and $1.04 \times 10^6$, respectively. An unexpectedly strong array size dependence of the frequency-current tunability is explained by magnon exchange between nano-constrictions and magnon losses at the array edges, further corroborated by micromagnetic simulations and Brillouin light scattering microscopy. Our results represent a significant step towards viable SHNO network applications in wireless communication and unconventional computing.

cond-mat.mes-hall↗

arXiv2024

Mutual synchronization in spin torque and spin Hall nano-oscillators

This chapter reviews the state of the art in mutually synchronized spin-torque and spin Hall nano-oscillator (STNO and SHNO) arrays. After briefly introducing the underlying physics, we discuss different nano-oscillator implementations and their functional properties with respect to frequency range, output power, phase noise, and modulation rates. We then introduce the concepts and the theory of mutual synchronization and discuss the possible coupling mechanisms in spintronic nano-oscillators, such as dipolar, electrical, and spin-wave coupling. We review the experimental literature on mutually synchronized STNOs and SHNOs in one- and two-dimensional arrays and discuss ways to increase the number of mutually synchronized nano-oscillators. Finally, the potential for applications ranging from microwave signal sources/detectors and ultrafast spectrum analyzers to neuromorphic computing elements and Ising machines is discussed together with the specific electronic circuitry that has been designed so far to harness this potential.

cond-mat.mes-hall↗

arXiv2024

A frequency tunable low-noise YIG-GGG based oscillator with strong magneto-elastic coupling

We present a frequency tunable magneto-acoustic oscillator (MAO) operating in low-phase-noise and complex dynamical regimes based on a single composite YIG-GGG resonator. The magneto-acoustic resonator (MAR) is based on a YIG (yttrium iron garnet) layer epitaxially grown on a GGG (gadolinium gallium garnet) substrate. By optimizing the YIG thickness, we obtain a high magneto-elastic coupling of around 1 MHz between the ferromagnetic resonance (FMR) in YIG and high overtone acoustic resonances (HBARs) in the YIG-GGG structure in the 1-2 GHz frequency range. It allows to eliminate the need for pre-selectors and bulky circulators, thus simplifying the MAO design while maintaining the possibility to lock to HBAR YIG-GGG modes. With an adjustment in the loop over-amplification parameter, the MAO can be locked either only to high-Q magneto-acoustic HBARs or to both types of resonance including HBARs and the FMR mode of the YIG film. In a low-phase-noise regime, MAO generates only at certain values of the applied field and exhibits discrete frequency tunability with a 3.281 MHz step corresponding to the frequency separation between the adjacent HBAR modes in a YIG-GGG structure. In a complex regime where oscillation conditions expand to include both HBAR and FMR modes, MAO demonstrates continuous generation as the function of the applied field with variable phase noise parameters. Moreover, in low-phase-noise regime, MAO phase noise plot improves by 30 dB compared to the operational regime locked to the pure FMR in YIG which is in agreement with the measured FMR and HBAR Q-factors.

physics.app-ph↗

arXiv2024

Ultra-low-current-density single-layer magnetic Weyl semimetal spin Hall nano-oscillators

Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $σ_{\rm xy}=1.35\times10^{5}$ $Ω^{-1} m^{-1}$ and the anomalous Hall angle, $θ_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert damping constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{σ_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $Ω^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials.

cond-mat.mes-hall↗

arXiv2024

Spin wave-driven variable-phase mutual synchronization in spin Hall nano-oscillators

Spin-orbit torque can drive auto-oscillations of propagating spin wave (PSW) modes in nano-constriction spin Hall nano-oscillators (SHNOs). These modes allow both long-range coupling and the potential of controlling its phase -- critical aspect for nano-magnonics, spin wave logic, and Ising machines. Here, we demonstrate PSW-driven variable-phase coupling between two nano-constriction SHNOs and study how their separation and the PSW wave vector impact their mutual synchronization. In addition to ordinary in-phase mutual synchronization, we observe, using both electrical measurements and phase-resolved $μ-$Brillouin Light Scattering microscopy, mutual synchronization with a phase that can be tuned from 0 to $π$ using the drive current or the applied field. Micromagnetic simulations corroborate the experiments and visualize how the PSW patterns in the bridge connecting the two nano-constrictions govern the coupling. These results advance the capabilities of mutually synchronized SHNOs and open up new possibilities for applications in spin wave logic, unconventional computing, and Ising Machines.

cond-mat.mes-hall↗

arXiv2023

Ultra-low current 10 nm spin Hall nano-oscillators

Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of this problem and study how different seed layers can mitigate it. We find that an ultra-thin Al$_{2}$O$_{3}$ seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 $μ$A. In addition, the combination of electrical insulation and high thermal conductivity of the Al$_{2}$O$_{3}$ seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. Our state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or two-dimensional arrays.

cond-mat.mes-hall↗

arXiv2023

Phase noise analysis of mutually synchronized spin Hall nano-oscillators

The reduction of phase noise in electronic systems is of utmost importance in modern communication and signal processing applications and requires an understanding of the underlying physical processes. Here, we systematically study the phase noise in mutually synchronized chains of nano-constriction spin Hall nano-oscillators (SHNOs). We find that longer chains have improved phase noise figures at low offset frequencies (1/f noise), where chains of two and ten mutually synchronized SHNOs have 2.8 and 6.2 dB lower phase noise than single SHNOs. This is close to the theoretical values of 3 and 10 dB, and the deviation is ascribed to process variations between nano-constrictions. However, at higher offset frequencies (thermal noise), the phase noise unexpectedly increases with chain length, which we ascribe to process variations, a higher operating temperature in the long chains at the same drive current and phase delays in the coupling between nano-constrictions.

cond-mat.mes-hall↗

arXiv2023

Robust mutual synchronization in long spin Hall nano-oscillator chains

Mutual synchronization of N serially connected spintronic nano-oscillators increases their coherence by a factor $N$ and their output power by $N^2$. Increasing the number of mutually synchronized nano-oscillators in chains is hence of great importance for better signal quality and also for emerging applications such as oscillator-based neuromorphic computing and Ising machines where larger N can tackle larger problems. Here we fabricate spin Hall nano-oscillator chains of up to 50 serially connected nano-constrictions in W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks and demonstrate robust and complete mutual synchronization of up to 21 nano-constrictions, reaching linewidths of below 200 kHz and quality factors beyond 79,000, while operating at 10 GHz. We also find a square increase in the peak power with the increasing number of mutually synchronized oscillators, resulting in a factor of 400 higher peak power in long chains compared to individual nano-constrictions. Although chains longer than 21 nano-constrictions also show complete mutual synchronization, it is not as robust and their signal quality does not improve as much as they prefer to break up into partially synchronized states. The low current and low field operation of these oscillators along with their wide frequency tunability (2-28 GHz) with both current and magnetic fields, make them ideal candidates for on-chip GHz-range applications and neuromorphic computing.

cond-mat.mes-hall↗

arXiv2022

Voltage control of frequency, effective damping and threshold current in nano-constriction-based spin Hall nano-oscillators

Using micromagnetic simulations, we study the interplay between strongly voltage-controlled magnetic anisotropy (VCMA), $ΔK = \pm$200 kJ/m$^3$, and gate width, $w=$ 10--400 nm, in voltage-gated W/CoFeB/MgO based nano-constriction spin Hall nano-oscillators. The VCMA modifies the local magnetic properties such that the magnetodynamics transitions between regimes of \emph{i}) confinement, \emph{ii}) tuning, and \emph{iii}) separation, with qualitatively different behavior. We find that the strongest tuning is achieved for gate widths of the same size as the the constriction width, for which the effective damping can be increased an order of magnitude compared to its intrinsic value. As a consequence, voltage control remains efficient over a very large frequency range, and subsequent manufacturing advances could allow SHNOs to be easily integrated into next-generation electronics for further fundamental studies and industrial applications.

cond-mat.mes-hall↗

arXiv2022

A spinwave Ising machine

We demonstrate a spin-wave-based time-multiplexed Ising Machine (SWIM), implemented using a 5 $μ$m thick Yttrium Iron Garnet (YIG) film and off-the-shelf microwave components. The artificial Ising spins consist of 34--68 ns long 3.125 GHz spinwave RF pulses with their phase binarized using a phase-sensitive microwave amplifier. Thanks to the very low spinwave group velocity, the 7 mm long YIG waveguide can host an 8-spin MAX-CUT problem and solve it in less than 4 $μ$s while consuming only 7 $μ$J. Using a real-time oscilloscope, we follow the temporal evolution of each spin as the SWIM minimizes its energy and find both uniform and domain-propagation-like switching of the spin state. The SWIM has the potential for substantial further miniaturization, scalability, speed, and reduced power consumption, and may become a versatile platform for commercially feasible optimization problem solvers with high performance.

cond-mat.mes-hall↗

arXiv2022

Optothermal control of spin Hall nano-oscillators

We investigate the impact of localized laser heating on the auto-oscillation properties of a 170 nm wide nano-constriction spin Hall nano-oscillators (SHNO) fabricated from a NiFe/Pt bilayer on a sapphire substrate. A 532 nm continuous wave laser is focused down to a spot size of about 500 nm at a power ranging from 0 to 12 mW. Through a comparison with resistive heating, we estimate a local temperature rise of about 8 K/mW. We demonstrate reversible laser tuning of the threshold current, the frequency, and the peak power, and find that the SHNO frequency can be tuned by up to 350 MHz, which is over three times more than the current tuning alone. Increasing the temperature also results in increased signal jitter, an increased threshold current, and a reduced maximum current for auto-oscillations. Our results open up for optical control of single SHNOs in larger SHNO networks without the need for additional voltage gates.

physics.app-ph↗

arXiv2021

Ultrathin ferrimagnetic GdFeCo films with very low damping

Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine the ultrafast magnetization dynamics of antiferromagnets with a ferromagnet-like spin-orbit-torque (SOT) behavior. However to use ferrimagnets in spintronic devices their advantageous properties must be retained also in ultrathin films (t < 10 nm). In this study, ferrimagnetic Gdx(Fe87.5Co12.5)1-x thin films in the thickness range t = 2-20 nm were grown on high resistance Si(100) substrates and studied using broadband ferromagnetic resonance measurements at room temperature. By tuning their stoichiometry, a nearly compensated behavior is observed in 2 nm Gdx(Fe87.5Co12.5)1-x ultrathin films for the first time, with an effective magnetization of Meff = 0.02 T and a low effective Gilbert damping constant of α = 0.0078, comparable to the lowest values reported so far in 30 nm films. These results show great promise for the development of ultrafast and energy efficient ferrimagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Femtosecond laser comb driven perpendicular standing spin waves

We study femtosecond laser comb driven sustained and coherent spin wave (SW) generation in permalloy (Py) films over a thickness range of $d =$ 40--100 nm. A simple rapid demagnetization model describes the dependence of the observed SW intensity on laser power for all film thicknesses. In the thicker films we observe laser comb excited perpendicular standing spin waves up to third order and to 18 multiples of the 1 GHz laser repetition rate. Our results demonstrate the versatility of femtosecond combs as contact-less SW point sources over a wide range of film thickness and type of SW modes.

cond-mat.mes-hall↗

arXiv2020

A Spin Hall Ising Machine

Ising Machines (IMs) are physical systems designed to find solutions to combinatorial optimization (CO) problems mapped onto the IM via the coupling strengths of its binary spins. Using the intrinsic dynamics and different annealing schemes, the IM relaxes over time to its lowest energy state, which is the solution to the CO problem. IMs have been implemented in quantum, optical, and electronic hardware. One promising approach uses interacting nonlinear oscillators whose phases have been binarized through injection locking at twice their natural frequency. Here we demonstrate such Oscillator IMs using nano-constriction spin Hall nano-oscillator (SHNO) arrays. We show how the SHNO arrays can be readily phase binarized and how the resulting microwave power corresponds to well-defined global phase states. To distinguish between degenerate states we use phase-resolved Brillouin Light Scattering (BLS) microscopy to directly observe the individual phase of each nano-constriction.

cond-mat.mes-hall↗

arXiv2020

Width dependent auto-oscillating properties of constriction based spin Hall nano-oscillators

We study the current tunable microwave signal properties of nano-constriction based spin Hall nano-oscillators (SHNOs) in oblique magnetic fields as a function of the nano-constriction width, $w=$~50--140 nm. The threshold current is found to scale linearly with $w$, defining a constant threshold current density of $J_{th}=$ 1.7 $\times$ 10$^{8}$ A/cm$^2$. While the current dependence of the microwave frequency shows the same generic non-monotonic behavior for all $w\geqslant$ 80 nm, the quality of the generated microwave signal improves strongly with $w$, showing a linear $w$ dependence for both the total power and the linewidth. As a consequence, the peak power for a 140 nm nano-constriction is about an order of magnitude higher than that of a 80 nm nano-constriction. The smallest nano-constriction, $w=$ 50 nm, exhibits a different behavior with a higher power and a worse linewidth indicating a crossover into a qualitatively different narrow-constriction regime.

cond-mat.mes-hall↗

arXiv2018

Two-dimensional mutual synchronization in spin Hall nano-oscillator arrays

Spin Hall nano-oscillators (SHNOs) utilize pure spin currents to drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to each other they can interact and sometimes mutually synchronize, in pairs or in short linear chains. Here we demonstrate robust mutual synchronization of two-dimensional SHNO arrays ranging from 2 x 2 to 8 x 8 nano-constrictions, observed both electrically and using micro-Brillouin Light Scattering microscopy. The signal quality factor, $Q=f/Δf$, increases linearly with number of mutually synchronized nano-constrictions ($N$), reaching 170,000 in the largest arrays. While the microwave peak power first increases as $N^2$, it eventually levels off, indicating a non-zero relative phase shift between nano-constrictions. Our demonstration will enable the use of SHNO arrays in two-dimensional oscillator networks for high-quality microwave signal generation and neuromorphic computing.

cond-mat.mes-hall↗