arXiv subjects

Ahmed Abouelkomsan

Publications and source records attributed to Ahmed Abouelkomsan.

23 records · Page 2Linked to original sources

arXiv2023

Topological and stacked flat bands in bilayer graphene with a superlattice potential

We show that bilayer graphene in the presence of a 2D superlattice potential provides a highly tunable setup that can realize a variety of flat band phenomena. We focus on two regimes: (i) topological flat bands with non-zero Chern numbers, C, including bands with higher Chern numbers |C| > 1; and (ii) an unprecedented phase consisting of a stack of nearly perfect flat bands with C = 0. For realistic values of the potential and superlattice periodicity, this stack can span nearly 100 meV, encompassing nearly all of the low-energy spectrum. We further show that in the topological regime, the topological flat band has a favorable band geometry for realizing a fractional Chern insulator (FCI) and use exact diagonalization to show that the FCI is in fact the ground state at 1/3 filling. Our results provide a realistic guide for future experiments to realize a new platform for flat band phenomena.

cond-mat.mes-hall↗

arXiv2023

Quantum Metric Induced Phases in Moiré Materials

We show that, quite generally, quantum geometry plays a major role in determining the low-energy physics in strongly correlated lattice models at fractional band fillings. We identify limits in which the Fubini Study metric dictates the ground states and show that this is highly relevant for Moiré materials leading to symmetry breaking and interaction driven Fermi liquids. This phenomenology stems from a remarkable interplay between the quantum geometry and interactions which is absent in continuum Landau levels but generically present in lattice models where these terms tend to destabilize e.g. fractional Chern insulators. We explain this as a consequence of the fundamental asymmetry between electrons and holes for band projected normal ordered interactions, as well as from the perspective of a self-consistent Hartree-Fock calculation. These basic insights about the role of the quantum metric turn, when dominant, an extremely strongly coupled problem into an effectively weakly coupled one, and may also serve as a guiding principle for designing material setups.

cond-mat.str-el↗

arXiv2022

Topological Lattice Models with Constant Berry Curvature

Band geometry plays a substantial role in topological lattice models. The Berry curvature, which resembles the effect of magnetic field in reciprocal space, usually fluctuates throughout the Brillouin zone. Motivated by the analogy with Landau levels, constant Berry curvature has been suggested as an ideal condition for realizing fractional Chern insulators. Here we show that while the Berry curvature cannot be made constant in a topological two-band model, lattice models with three or more degrees of freedom per unit cell can support exactly constant Berry curvature. However, contrary to the intuitive expectation, we find that making the Berry curvature constant does not always improve the properties of bosonic fractional Chern insulator states. In fact, we show that an "ideal flatband" cannot have constant Berry curvature, equivalently, we show that the density algebra of Landau levels cannot be realised in any tight-binding lattice system.

cond-mat.str-el↗

arXiv2021

Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene

We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number $\mathcal C=1$ and $\mathcal{C}= 2$ bands, occur at high temperatures and without the need for an external magnetic field.

cond-mat.mes-hall↗

arXiv2020

Particle-Hole Duality, Emergent Fermi Liquids and Fractional Chern Insulators in Moiré Flatbands

Moiré flatbands, occurring, e.g., in twisted bilayer graphene at magic angles, have attracted ample interest due to their high degree of experimental tunability and the intriguing possibility of generating novel strongly interacting phases. Here we consider the core problem of Coulomb interactions within fractionally filled spin and valley polarized Moiré flatbands and demonstrate that the dual description in terms of holes, which acquire a nontrivial hole dispersion, provides key physical intuition and enables the use of standard perturbative techniques for this strongly correlated problem. In experimentally relevant examples such as ABC stacked trilayer and twisted bilayer graphene aligned with boron nitride, it leads to emergent interaction-driven Fermi liquid states at electronic filling fractions down to around $1/3$ and $2/3$ respectively. At even lower filling fractions, the electron density still faithfully tracks the single-hole dispersion while exhibiting distinct non-Fermi liquid behavior. Most saliently, we provide microscopic evidence that high temperature fractional Chern insulators can form in twisted bilayer graphene aligned with hexagonal boron nitride.

cond-mat.mes-hall↗