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Ahmed Jellal

Publications and source records attributed to Ahmed Jellal.

At least 37 records · Page 2Linked to original sources

Floquet-driven tunneling control in monolayer MoS$_2$

We study how fermions in molybdenum disulfide MoS$_2$ interact with a laser field and a static potential barrier, focusing on the transmission probability. Our aim is to understand and control photon-assisted quantum transport in this two-dimensional material under external driving. We use the Floquet approximation to describe the wave functions in the three regions of the system. By applying continuity conditions at the boundaries, we obtain a set of equations involving an infinite number of Floquet modes. We explicitly determine transmissions involving the central band $E$ and the first sidebands $E \pm \hbarω$. As for higher-order bands, we use the transfer matrix approach together with current density to compute the associated transmissions. Our results reveal that the transmission probability oscillates for both spin-up and spin-down electrons. The oscillations of spin-down electrons occur over nearly twice the period of spin-up electrons. Among all bands, the central one consistently shows the highest transmission. We also find that stronger laser fields and wider barriers both lead to reduced transmission. Moreover, laser irradiation enables controllable channeling and filtering of transmission bands by tuning the laser intensity and system parameters. This highlights the potential of laser-driven MoS$_2$ structures for highly sensitive electromagnetic sensors and advanced optoelectronic devices.

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Laser-induced modulation of conductance in graphene with magnetic barriers

We study how electrons move across a graphene sheet when it encounters two magnetic barriers with a region in between that is continuously driven by laser light. Rather than acting as a static obstacle, this illuminated middle section becomes a Floquet cavity that opens new transport channels through controlled photon absorption and emission. By combining Floquet theory with the transfer matrix method, we track electron transmission through both the main energy band and the emerging photon-assisted sidebands. We find that the laser does more than modify the potential--it reshapes how electrons interact between the magnetic barriers, enabling a switch from ordinary transmission to transport dominated by photon exchange. Because the magnetic field and the optical drive are applied to separate sections of the device, the system supports interference between cyclotron-filtered motion and discrete photon-pumping channels, producing Fano resonances and angle-dependent transmission zeros that cannot appear in double magnetic or double laser barrier systems alone. Under well-defined conditions, the distance between the magnetic barriers controls the coupling between Floquet channels, allowing highly tunable resonances and even perfect transmission, despite strong magnetic confinement. We also observe that low-energy carriers are efficiently blocked by the magnetic regions, while conductance steadily rises with energy until it reaches a clear saturation plateau. This hybrid design provides a versatile way to steer graphene electrons by balancing optical pumping and magnetic momentum filtering.

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Spin and valley-dependent tunneling in MoS$_2$ through magnetic barrier

We study electron transport in monolayer molybdenum disulfide MoS$_2$ subjected to a magnetic barrier. Our analysis employs a full-band continuum model to capture the relevant physical phenomena. We focus on how electron energy, magnetic field strength, and the geometric characteristics of the barrier affect the transmission and conductance. We observe sharp resonant tunneling features emerging from quantum interference effects induced by magnetic confinement. A key outcome of our study is the discovery of distinct resonance patterns in the conduction and valence bands. These patterns are closely related to the intrinsic spin-orbit coupling in MoS$_2$ and the breaking of time-reversal symmetry by the magnetic field. This results in significant spin and valley selectivity in electron transport. We demonstrate that adjusting external parameters precisely controls spin-polarized and valley-polarized currents. We show that a magnetic barrier can control electron spin and valley in MoS$_2$, making it a promising platform for energy-efficient spintronic and valleytronic devices.

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Effect of magnetic field and light on energy levels of (1+3+1) chirally twisted multilayer graphene system

We study the Hofstadter butterfly spectrum in (1+3+1) chirally twisted multilayer graphene (CTMLG) subject to perpendicular magnetic field and light with different polarizations. We focus on the interplay between twist angles and light-induced effects. In equilibrium, we examine symmetric ($θ_1 = θ_2$) and asymmetric ($θ_1 \neq θ_2$) configurations. Our results show that asymmetric configurations cause distinct effects in the electronic energy spectrum. However, the unique symmetry of the system ensures that the spectra remain identical when the twist angles are interchanged. This highlights the role of interlayer coupling in shaping the electronic structure of CTMLG. We then explored the effects of external periodic perturbations, such as circularly polarized light (CPL) and waveguide-generated linearly polarized light (WGL). CPL breaks chiral symmetry, creating a gap that distorts the Hofstadter spectrum. These distortions are more pronounced for asymmetric twist configurations. In contrast, WGL preserves chiral symmetry and has a tunable, non-monotonic effect on the bandwidth. This makes WGL a reliable tool for engineering electronic properties. These results demonstrate how (1+3+1)-CTMLG combines the effects of light-matter interactions with moiré physics. This allows accurate control of the electronic properties and fractal spectra by adjusting external fields and twist angles.

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Transmissions and group delay time in graphene with proximity exchange field and double barriers

We study the transmission and group delay time for fermions in graphene under a proximity exchange field scattered by double barriers. Solving the Dirac equation over five regions, we calculate transmission and reflection coefficients using the transfer matrix method, and analyze group delay time using a Gaussian wave packet and the stationary phase method. Our results reveal spin-dependent features in transmission and group delay time, with notable shifts between spin orientations, especially for configurations with up to three layers of boron nitride (BN). We observe enhanced Klein tunneling peaks and full transmission conditions for certain combinations of system parameters. The double-barrier configuration also significantly improves the group delay time compared to the single-barrier case. In fact, we show that the group delay time oscillates as the barrier width increases without showing signs of saturation, indicating the absence of the Hartman effect. This is in contrast to the single-barrier case, where the group delay time is found to saturate as the barrier width increases. In addition, we identify critical angles and maximum energies for evanescent modes.

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Laser-assisted tunneling and Hartman effect in graphene under scalar potential and exchange fields

We study the tunneling effect of Dirac fermions in a graphene sheet by introducing a potential barrier in a region of width $D$ exposed to laser field. This sheet is placed on a boron nitride/ferromagnetic substrate such as cobalt or nickel. By using the Floquet theory, we determine the solutions of the energy spectrum. We calculate the transmission and reflection coefficients by applying the boundary conditions along with the transfer matrix method. These coefficients help determine their probabilities by current densities and group delay times by their phases. We numerically show that the laser field plays a crucial role in this structure, as it completely suppresses Klein tunneling compared to the case without laser. Furthermore, in contrast to the Hartman effect, the group delay time becomes dependent on the barrier width with the appearance of additional peaks. This suggests that fermion-field interactions cause additional delays within the barrier and also help to reduce spin coupling. Adding BN layers increases the interval of transmission suppression and completely eliminates coupling after the addition of three BN layers. Total reflection is observed for incident fermions with an angle less than $-1$ or greater than one.

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Effect of laser field and magnetic flux on scattering in graphene quantum dots

We show how Dirac electrons interact with a graphene quantum dots (GQDs) when exposed to both a magnetic flux and circularly polarized light. After obtaining the solutions of the energy spectrum, we compute the scattering coefficients. These allow us to show how efficiently the electrons diffuse and how their probability density is distributed in space. Our results show that light polarization is key in controlling electron scattering. It affects electron localization near the GQDs and the strength of the scattering coefficients. We also investigate how light intensity and magnetic flux affect the formation of quasi-bound states. In addition, the electrostatic potential reduces the density of scattering states and fine-tunes the interaction between electrons and the quantum dot. This research improves our understanding of electron behavior in graphene nanostructures and suggests new ways to control electronic states at the quantum level.

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Electron trapping via magnetic and laser fields in gapped graphene quantum dots

We study electron scattering in graphene quantum dots (GQDs) under the combined influence of a magnetic field, an energy gap, and circularly polarized laser irradiation. Using the Floquet approach and the Dirac equation, we derive the energy spectrum solutions. The scattering coefficients are calculated explicitly by matching the eigenspinors at the GQD interfaces, revealing a dependence on several physical parameters. In addition, we compute the scattering efficiency, the electron density distribution, and the lifetime of the quasi-bound states. Our numerical results show that the presence of an energy gap and circularly polarized laser irradiation enhances the localization of the electron density within the GQDs, leading to an increase in the lifetime of the quasi-bound states. In particular, the intensity and polarization of the light influence the scattering process, allowing the manipulation of the electron confinement state. These results highlight the importance of combining magnetic fields and polarized light to control electronic transport in graphene nanostructures.

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Quantum steering and entanglement for coupled systems: exact results

Using the Wigner function in phase space, we study quantum steering and entanglement between two coupled harmonic oscillators. We derive expressions for purity and quantum steering in both directions and identify several important selection rules. Our results extend the work reported in {\color{blue} [Phys. Rev. E 97, 042203 (2018)]} focused on the weak coupling regime, revealing significant deviations in the ultra-strong coupling regime. In particular, Makarov's prediction of a separable ground state contrasts with our exact calculations, highlighting the limitations of his approach under strong coupling conditions. We show that quantum steering between excited oscillators is completely absent even in the ultra-strong coupling regime. Similarly, resonant oscillators have no steering, and ground states cannot steer any receiver state. We find that quantum steering becomes notably more pronounced as the system approaches resonance and within specific ranges of ultra-strong coupling. This behavior is marked by a clear asymmetry, where steering is present in only one direction, highlighting the delicate balance of interaction strengths that govern the emergence of quantum correlations. These results advance our understanding of how excitation levels and coupling strengths influence quantum steering and entanglement in coupled harmonic oscillators.

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Controlling Goos-Hänchen shifts in phosphorene via barrier and well

We study the effect of the double potentials (barrier, well) on the Goos-Hänchen (GH) shifts in phosphorene. We determine the solutions of the energy spectrum associated with the five regions that make up our system. By studying the phase shifts, we find that the GH shifts are highly sensitive to the incident energy, the $y$ directional wave vector, the potential heights and widths. To validate our findings, we perform a numerical analysis of the GH shifts as a function of the transmission probability under various conditions. In particular, we observe a consistent pattern in which a positive peak in the GH shift is always followed by a negative valley, a behavior evident at all potential height values. Notably, the energies at which the GH shift changes sign coincide exactly with the points at which transmission drops to zero. In particular, the transmission resonances that occur just before and just after the transmission gap region are strongly correlated with the points at which the GH shift changes sign. This study advances our understanding of how the double potential influences the GH shift behaviors in phosphorene. The ability to fine-tune the GH shifts by changing system parameters suggests potential applications in optical and electronic devices using this two-dimensional material.

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Conductance in graphene through double laser barriers and magnetic field

Photon-assisted charge transport through a double barrier laser structure, separated by a region assisted by a magnetic field, is studied. Employing Floquet theory and matrix formalism, the transmission probabilities for the central band and sidebands are calculated. The temporal periodicity of the laser fields creates an infinite number of transmission modes due to the degeneracy of the energy spectrum. The challenge of numerically addressing all modes necessitates the limitation to the first sideband corresponding to energies $\varepsilon\pm\varpi$. A critical phase difference between the two laser fields is found to cancel the transmission through the sidebands due to quantum interference. Varying the width of the region where the magnetic field is applied allows for the suppression of lateral transmission and control over the transmission mode. The intensity of the laser fields also allows for suppressing Klein tunneling and blocking transmission processes with zero photon exchange, as well as activating transmission processes with photon exchange. The conductance is also affected by changes in the system parameters. Increasing the intensity of the laser field reduces the conductance due to the confinement of the fermions by the laser fields. In addition, increasing the size of the region where the magnetic field is applied reduces the conductance because the increased distance gives the fermions a greater chance of diffusion and increases their interaction with the magnetic field.

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Entanglement distribution in pure non-Gaussian tripartite states: a Schmidt decomposition approach

We study entanglement in a system of three coupled quantum harmonic oscillators. Specifically, we use the Schmidt decomposition to analyze how the entanglement is distributed among the three subsystems. The Schmidt decomposition is a powerful mathematical tool for characterizing bipartite entanglement in composite quantum systems. It allows to write a multipartite quantum state as a sum of product states between the subsystems, with coefficients known as Schmidt coefficients. We apply this decomposition to the general quantum state of three coupled oscillators and study how the Schmidt coefficients evolve as the interaction strengths between the oscillators are varied. This provides insight into how entanglement is shared between the different bipartitions of the overall three-particle system. Our results advance the fundamental understanding of multipartite entanglement in networked quantum systems. They also have implications for quantum information processing using multiple entangled nodes.

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Influence of Aharonov-Bohm flux and dual gaps on electron scattering in graphene quantum dots

We show how the Aharonov-Bohm flux (AB) $ϕ_i$ and the dual gaps $(Δ_1, Δ_2)$ can affect the electron scattering in graphene quantum dots (GQDs) of radius $r_0$ in the presence of an electrostatic potential $V$. After obtaining the solutions of the energy spectrum, we explicitly determine the radial component of the reflected current $J_r^r$, the square modulus of the scattering coefficients $|c_m|^2$, and the scattering efficiency $Q$. Different scattering regimes are identified based on physical parameters such as incident energy $E$, $V$, $r_0$, dual gaps, and $ϕ_i$. In particular, we show that lower values of $E$ are associated with larger amplitudes of $Q$. Furthermore, it is found that $Q$ exhibits a damped oscillatory behavior with increasing the AB flux. In addition, increasing the external gap $Δ_1$ resulted in higher values of $Q$. By increasing $ϕ_i$, we show that the oscillations in $|c_m|^2$ disappear for larger values of $r_0$ and are replaced by prominent peaks at certain values of $E$ and angular momentum $m$. Finally, we show that $J_{r}^r$ displays periodic oscillations of constant amplitude, which are affected by the AB flux.

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Transport properties through alternating borophene and graphene superlattices

The electronic transport properties of two junctions (BGB, GBG) made of borophene (B) and graphene (G) are investigated. Using the transfer matrix method with Chebyshev polynomials, we have studied single and multiple barriers in a superlattice configuration. We showed that a single barrier exhibits remarkable tilted transport properties, with perfect transmission observed for both junctions under normal incidence. We found that robust superlattice transmission is maintained for multiple barriers, particularly in the BGB junction. It turns out that by varying the incident energy, many gaps appear in the transmission probability. The number, width, and position of these transmission gaps can be manipulated by adjusting the number of cells, incident angle, and barrier characteristics. For diffuse transport, we observed considerable variations in transmission probability, conductance and the Fano factor, highlighting the sensitivity of these junctions to the physical parameters. We showed different behaviors between BGB and GBG junctions, particularly with respect to the response of conductance and Fano factor when barrier height varies. For ballistic transport, we have seen that the minimum {scaled conductance} is related to the maximum Fano factor, demonstrating their control under specific conditions of the physical parameters. Analysis of the length ratio (geometric factor) revealed some remarkable patterns, where {scaled conductance} and the Fano factor converged to certain values as the ratio approached infinity.

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Transforming qubits via quasi-geometric approaches

We develop a theory based on quasi-geometric (QG) approach to transform a small number of qubits into a larger number of error-correcting qubits by considering four different cases. More precisely, we use the 2-dimensional quasi-orthogonal complete complementary codes (2D-QOCCCSs) and quasi-cyclic asymmetric quantum error-correcting codes (AQECCs) via quasigroup and group theory properties. We integrate the Pauli $X$-gate to detect and correct errors, as well as the Hadamard $H$-gate to superpose the initial and final qubits in the quantum circuit diagram. We compare the numerical results to analyze the success, consistency, and performance of the corrected errors through bar graphs for 2D-QOCCCs and AQECCs according to their characteristics. The difficulty in generating additional sets of results and counts for AQECCs arises because mapping a smaller initial number of qubits to a larger final number is necessary to correct more errors. For AQECCs, the number of errors that can be corrected must be equal to or less than the initial number of qubits. High error correction performance is observed when mapping 1-qubit state to 29-qubits to correct 5 errors using 2D-QOCCCs. Similarly, transforming 1-qubit to 13-qubits using AQECCs also shows high performance, successfully correcting 2 errors. The results show that our theory has the advantage of providing a basis for refining and optimizing these codes in future quantum computing applications due to its high performance in error correction.

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Aharonov-Bohm flux and dual gaps effects on energy levels in graphene magnetic quantum dots

We address the question of how the Aharonov-Bohm flux $Φ_{AB}$ can affect the energy levels of graphene magnetic quantum dots (GMQDs) of radius $R$. To answer this question, we consider GMQDs induced by a magnetic field $B$ and subjected to two different gaps - an internal gap $Δ_1$ and an external gap $Δ_2$. After determining the eigenspinors and ensuring continuity at the boundary of the GMQDs, we formulate an analytical equation describing the corresponding energy levels. Our results show that the energy levels can exhibit either a symmetric or an asymmetric behavior depending on the valleys $K$ and $K'$ together with the quantum angular momentum $m$. In addition, we find that $Φ_{AB}$ causes an increase in the band gap width when $Δ_1$ is present inside the GMQDs. This effect is less significant when a gap is present outside, resulting in a longer lifetime of the confined electronic states. Further increases in \(Φ_{AB}\) reduce the number of levels between the conduction and valence bands, thereby increasing the band gap. These results demonstrate that the electronic properties of graphene can be tuned by the presence of the AB flux, offering the potential to control the behavior of graphene-based quantum devices.

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Transmissions in gapped graphene exposed to tilting and oscillating barriers

We investigate the transmissions of fermions through gapped graphene structures by employing a combination of double barrier tilting and a time-oscillating potential. The latter introduces additional sidebands into the transmission probability, which manifest at energy levels determined by the frequency and incident energy. These sidebands arise from the absorption or emission of photons generated by the oscillating potential. We demonstrate that the tilting and positioning of the scattering events within the barriers play a crucial role in determining the peak of tunneling resistance. In particular, the presence of a mid-barrier-embedded scatter leads to a transition from a peak to a cusp when the incident energy reaches the Dirac point within a barrier. Additionally, we illustrate that introducing a time-varying potential results in transmissions dispersing across both the central band and the sidebands.

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Tunneling in ABC trilayer graphene superlattice

We study the transport properties of Dirac fermions in ABC trilayer graphene (ABC-TLG) superlattices. More specifically, we analyze the impact of varying the physical parameters -- the number of cells, barrier/well width, and barrier heights -- on electron tunneling in the ABC-TLG. In the initial stage, we solved the eigenvalue equation to determine the energy spectrum solutions for the ABC-TLG superlattices. Subsequently, we applied boundary conditions to the eigenspinors and employed the transfer matrix method to calculate transmission probabilities and conductance. For the two-band model, we identified the presence of Klein tunneling, with a notable decrease as the number of cells increased. The introduction of interlayer bias opened a gap as the number of cells increased, accompanied by an asymmetry in scattered transmission. Increasing the barrier/well width and the number of cells resulted in an amplified number of gaps and oscillations in both two-band and six-band cases. We observed a corresponding decrease in conductance as the number of cells increased, coinciding with the occurrence of a gap region. Our study demonstrates that manipulating parameters such as the number of cells, the width of the barrier/well, and the barrier heights provides a means of controlling electron tunneling and the occurrence of gaps in ABC-TLG. Specifically, the interplay between interlayer bias and the number of cells is identified as a crucial factor influencing gap formation and transmission asymmetry.

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