arXiv subjects

Ahmed Samir Lotfy

Publications and source records attributed to Ahmed Samir Lotfy.

4 recordsLinked to original sources

arXiv2026

Spectral Fingerprints of Resonant Defect Scattering by Substitutional Mn in Graphene

Using substitutional Mn in graphene/Cu(111) as a model point defect, we combine scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) to test the predicted fingerprints of resonant scattering. As the Mn concentration increases to 0.44%, the Dirac point stretching reaches 0.52 eV, while momentum broadening remains energy independent. These spectral fingerprints classify substitutional Mn as a strong resonant scatterer and establish the combination of STM and ARPES as a powerful approach to identify and characterize resonant disorder in graphene.

cond-mat.mes-hall↗

arXiv2026

Disorder-driven symmetry suppression by van der Waals planar defects in a magnetic topological insulator

Magnetic topological insulators offer a platform to control electronic topology through magnetic order, yet reliable routes to tune their properties remain limited. Here, we show that ion irradiation allows to modify the magnetic and the topological properties of the van der Waals magnetic topological insulator MnBi$_2$Te$_4$. Using inert ion beams, intrinsic defects are introduced via collision cascades without chemical doping. We identify two distinct regimes. At low fluence, cation antisite disorder leads to a near-complete redistribution of Bi over cation sites while preserving long-range crystallographic order, accompanied by a transition from $p$-type to $n$-type transport. At high fluence, cation-anion intermixing drives the formation of a previously unreported layer-disordered phase characterized by a high density of van der Waals-specific planar defects, including swapped bilayers. Despite significant structural disorder, the system retains partial periodic order up to high displacement levels. Magnetometry and X-ray spectroscopy show that the Mn high-spin state and antiferromagnetic interactions persist, while magnetic anisotropy is strongly reduced. At the same time, the anomalous Hall conductivity is suppressed fivefold, far exceeding the change in magnetization, indicating a direct modification of Berry curvature. These results establish ion irradiation as a means to tune topology through defect engineering and reveal a disorder-driven approach to control symmetry and electronic structure in van der Waals magnetic materials.

cond-mat.mtrl-sci↗

arXiv2024

Magnetoelectric domain engineering from micrometer to Ångstrøm scales

The functionality of magnetoelectric multiferroics depends on the formation, size, and coupling of their magnetic and electric domains. Knowing the parameters guiding these criteria is a key effort in the emerging field of magnetoelectric domain engineering. Here we show, using a combination of piezoresponse-force microscopy, non-linear optics, and x-ray scattering, that the correlation length setting the size of the ferroelectric domains in the multiferroic hexagonal manganites can be engineered from the micron range down to a few unit cells under the substitution of Mn$^{3+}$ ions with Al$^{3+}$ ions. The magnetoelectric coupling mechanism between the antiferromagnetic Mn$^{3+}$ order and the distortive-ferroelectric order remains intact even at substantial replacement of Mn$^{3+}$ by Al$^{3+}$. Hence, chemical substitution proves to be an effective tool for domain-size engineering in one of the most studied classes of multiferroics.

cond-mat.mtrl-sci↗

arXiv2023

R2D2 -- An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO$_3$

Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us here to directly quantify the physical parameters relevant for the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode/DW junction. Furthermore, the activation energies needed to initiate the thermally-activated electronic transport along the DWs, can be extracted. In addition, we show that electronic transport along LiNbO$_3$ DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode/double-resistor equivalent circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by fitting the DWC data not only to z-cut LNO bulk DWs, but equally to z-cut thin-film LNO DWs, and DWC from x-cut DWs as reported in literature.

cond-mat.mtrl-sci↗