arXiv subjects

Ahmet Yagmur

Publications and source records attributed to Ahmet Yagmur.

5 recordsLinked to original sources

arXiv2026

Temperature-Dependent Spin-Orbit Torque Generation in Perpendicularly Magnetized Topological Insulator-Magnetic Multilayer Heterostructures

We report a comprehensive temperature-dependent investigation of spin-orbit torque (SOT) generation in heterostructures comprising a perpendicularly magnetized metallic multilayer grown on top of a topological insulator (TI) epilayer. Temperature-dependent second-harmonic Hall measurements reveal distinct trends in the magnitude of the spin-orbit torque across the studied heterostructures. Samples incorporating Bi2Se3 exhibit torques reaching approximately 12 mT/(10^12 A m^-2) at 15 K, around 5 times larger than those in a multilayer without the topological layer. The structure with a thin 2-nm Ta buffer for the multilayer shows the strongest enhancement and a pronounced increase at low temperatures, highlighting efficient spin-current generation from the topological surface states. In contrast, the sample with a 10 nm-thick Ta spacer exhibits reduced torque efficiency, consistent with partial attenuation of spin transmission through the buffer. Systems lacking Bi2Se3 but containing two heavy metals (Ta and Pt) yield significantly smaller torques, around 2.5 mT/(10^12 A m^-2), despite the presence of conventional spin Hall sources. These observations underscore the dominant role of TI-derived spin-momentum-locked currents in driving large damping-like torques and their sensitivity to interfacial structure and buffer-layer thickness.

cond-mat.mes-hall↗

arXiv2026

Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains

Topological insulators and skyrmion-hosting, chiral magnetic multilayers are two well-explored areas of modern condensed matter physics, each offering unique advantages for spintronics applications. In this paper, we demonstrate the optimization process for the growth of a Bi$_2$Se$_3$/buffer/[Pt/CoB/Ru]$_{\times N}$ heterostructure that combines these two material classes: the Bi$_2$Se$_3$ epilayer was grown by molecular beam epitaxy before transfer under ultrahigh vacuum to a separate growth chamber where the polycrystalline metallic multilayer was sputter deposited. The structure of the samples was characterized by co-fitted X-ray and polarized neutron reflectometry measurements and scanning transmission electron microscopy. Polarized neutron models and standard magnetometry show that a buffer layer exceeding a critical thickness is required to obtain the desired uniform, perpendicular magnetic anisotropy in every magnetic layer in the multilayer. Samples with both Ta and Mo buffers were used requiring thicknesses of 1.5 and 0.9 nm respectively. In minimizing the Bi$_2$Se$_3$ terracing, buffered samples yield well-defined, out-of-plane, magnetic domains suitable for spin-orbit torque induced manipulation as determined by X-ray photoemission electron microscopy.

cond-mat.mtrl-sci↗

arXiv2025

Tuning the Electronic States of Bi2Se3 Films with Large Spin-Orbit Interaction Using Molecular Heterojunctions

An electric bias can shift the Fermi level along the Dirac cone of a topological insulator and modify its charge transport, but tuning the electronic states and spin-orbit interaction (SOI) without destroying the surface topology is challenging. Here, we show that thin film Bi2Se3/n-p (p-n) molecular diodes form ordered interfaces where charge transfer and orbital re-hybridisation result in a decrease (increase) of the carrier density and improved mobility. In Bi2Se3 the spin-orbit lifetime, t_so, is 0.13 ps, which is comparable to the strongest spin-orbit materials. This lifetime drops further to 0.06 ps (0.09 ps) with the addition of p-n (n-p) molecular diodes, at the limit of measurable values. This strengthened spin-orbit interaction occurs even though molecules are made of light elements and increase the mean free path of the charge carriers by almost 50%, indicating changes to the Berry curvature and/or Rashba splitting around the hybridisation points. Raman spectroscopy gives evidence that the coupling effect may be controlled by optical irradiation, opening a pathway towards the design of heavy-light element hybrids with optically tunable quantum transport.

cond-mat.mtrl-sci↗

arXiv2024

Maximizing bipolar sensitivity for anomalous Nernst thermopiles in heat flux sensing in amorphous GdCo alloys

A Heat Flux Sensor (HFS) facilitates the visualization of heat flow, unlike a temperature sensor, and is anticipated to be a key technology in managing waste heat. Recently, an HFS utilizing the Anomalous Nernst Effect (ANE) has been proposed garnering significant interest in enhancing the transverse Seebeck coefficient. However, ideal materials for HFS not only require a large transverse Seebeck coefficient but also meet several criteria including low thermal conductivity and a bipolar nature of the transverse Seebeck coefficient, especially a negative coefficient. In this study, we have investigated ANE in amorphous ferrimagnetic GdCo alloys, revealing their numerous advantages as HFS materials. These include a large transverse Seebeck coefficient, extremely low thermal conductivity, large negative sensitivity, unparalleled bipolar sensitivity, versatility for deposition on various substrates, and a small longitudinal Seebeck coefficient. These qualities position GdCo films as promising candidates for the advancement of HFS technology.

cond-mat.mtrl-sci↗

arXiv2024

Coexistence of large anomalous Nernst effect and large coercive force in amorphous ferrimagnetic TbCo alloy films

The Anomalous Nernst Effect (ANE) has garnered significant interest for practical applications, particularly in energy harvesting and heat flux sensing. For these applications, it is crucial for the module to operate without an external magnetic field, necessitating a combination of a large ANE and a substantial coercive force. However, most materials exhibiting a large ANE typically have a relatively small coercive force. In our research, we have explored the ANE in amorphous ferrimagnetic TbCo alloy films, noting that the coercive force peaks at the magnetization compensation point (MCP). We observed that transverse Seebeck coefficients are amplified with Tb doping, reaching more than 1.0 uV/K over a wide composition range near the MCP, which is three times greater than that of pure Co. Our findings indicate that this enhancement is primarily due to direct conversion, a product of the transverse thermoelectric component and electrical resistivity. TbCo films present several significant advantages for practical use: a large ANE, the capability to exhibit both positive and negative ANE, the flexibility to be deposited on any substrate due to their amorphous nature, a low thermal conductivity, and a large coercive force. These attributes make TbCo films a promising material for advancing ANE-based technologies.

cond-mat.mes-hall↗