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Ai-Lun Yi

Publications and source records attributed to Ai-Lun Yi.

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Integrated time-bin entangled quantum light source on a 4H-SiC microring chip

Integrated time-bin-entangled photon-pair source with cavity-enhanced nonlinear optical processes is essential for quantum information technologies. However, microcavities with a high quality factor inherently introduce a trade-off between generation efficiency and photon bandwidth, which hinders the development of high-speed quantum networks with an integrated source. Here, we address this challenge by optimizing the nonlinearity property of the material and the geometry of the integrated microring resonator with a 4H-silicon carbide platform. Operating at a loaded quality factor of 1.9 $\times$ 10^5 - spectral bandwidth of 1.0 GHz and pumped with 300-ps double pulses separated by 1.25 ns at a repetition rate of 160 MHz, the device achieves a time-bin-entangled photon-pair generation rate of 1.35 $\times$ 10^7 s^-1 mW^-2. A raw visibility of 95.55 $\pm$ 0.18% is measured, showing a violation of Bell's inequality by more than 138 standard deviations, and a fidelity of 94.37 $\pm$ 0.22% is obtained by quantum state tomography. These results provide a scalable pathway to an efficient and broadband time-bin entangled quantum light source, overcoming intrinsic limitations of cavity-based designs and advancing integrated platforms for future quantum communication networks.

quant-ph

Room-temperature coherent control of implanted defect spins in silicon carbide

Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum network construction. Significant efforts have been undertaken to identify spin systems in SiC and to extend their quantum capabilities using large-scale growth and advanced nanofabrication methods. Here we demonstrated a type of spin defect in the 4H polytype of SiC generated via hydrogen ion implantation with high-temperature post-annealing, which is different from any known defects. These spin defects can be optically addressed and coherently controlled even at room temperature, and their fluorescence spectrum and optically detected magnetic resonance spectra are different from those of any previously discovered defects. Moreover, the generation of these defects can be well controlled by optimizing the annealing temperature after implantation. These defects demonstrate high thermal stability with coherently controlled electron spins, facilitating their application in quantum sensing and masers under harsh conditions.

physics.app-ph