arXiv subjects

Aida Ebrahimi

Publications and source records attributed to Aida Ebrahimi.

4 recordsLinked to original sources

arXiv2026

Ultra-Confinement of Polaritons in Single Atomic Layer Ag Photonic Quantum Dots

Light scattering by two-dimensional (2D) van der Waals heterostructures (vdWHs) is immense, especially given their infinitesimal volume, thus enabling strong light-matter interactions. Surface 2D polariton waves manifest through large concentration of electromagnetic field in vertical direction, normal to their propagation. By confining vdWH materials into 2D photonic shapes, one can manipulate and compress light in lateral directions. Scattering-type scanning near-field optical microscopy is a perfect tool for direct imaging of the propagating polaritons and studying the properties of confined polaritons in nanostructures. Though, thus far the quantitative analysis, such the wavelength extraction, has been challenged for confined polaritons by incapability of mapping of the wave period on sub-wavelength scale and difficulty of identifying an adequate substrate's "background" to subtract. Here, an analytical approach is developed to reveal the local propagation constant of confined polaritons under abovementioned constraints and map it with the sub-wavelength resolution. Applied to analysis of the SiC/2D-Ag/EG (epitaxial graphene) photonic nanostructures, the technique uncovered that the polaritons are highly confined in both vertical ($\sim\lambda$/50) and lateral directions ($\sim\lambda$/40) by 2D metal.

cond-mat.mtrl-sci↗

arXiv2025

Active Dual-Gated Graphene Transistors for Low-Noise, Drift-Stable, and Tunable Chemical Sensing

Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional single-gate GFET sensors in liquid environments suffer from severe limitations, including signal drift, charge trapping, and insufficient signal amplification. Here, we introduce a dual-gate GFET architecture that integrates a high-k hafnium dioxide local back gate with an electrolyte top gate, coupled with real-time feedback biasing. This design enables capacitive signal amplification while simultaneously suppressing gate leakage and low-frequency noise. By systematically evaluating seven distinct operational modes, we identify the Dual Mode Fixed configuration as optimal, achieving up to 20x signal gain, > 15x lower drift compared with gate-swept methods, and up to 7x higher signal to noise ratio across a diverse range of analytes, including neurotransmitters, volatile organic compounds, environmental contaminants, and proteins. We further demonstrate robust, multiplexed detection using a PCB-integrated GFET sensor array, underscoring the scalability and practicality of the platform for portable, high-throughput sensing in complex environments. Together, these advances establish a versatile and stable sensing technology capable of real-time, label-free detection of molecular targets under ambient and physiological conditions, with broad applicability in health monitoring, food safety, agriculture, and environmental screening.

physics.app-ph↗

arXiv2024

Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices

Engineering superlattices (SLs) - which are spatially periodic potential landscapes for electrons - is an emerging approach for the realization of exotic properties, including superconductivity and correlated insulators, in two-dimensional materials. While moir\'e SL engineering has been a popular approach, nanopatterning is an attractive alternative offering control over the pattern and wavelength of the SL. However, the disorder arising in the system due to imperfect nanopatterning is seldom studied. Here, by creating a square lattice of nanoholes in the $SiO_2$ dielectric layer using nanolithography, we study the superlattice potential and the disorder formed in hBN-graphene-hBN heterostructures. Specifically, we observe that while electrical transport shows distinct superlattice satellite peaks, the disorder of the device is significantly higher than graphene devices without any SL. We use finite-element simulations combined with a resistor network model to calculate the effects of this disorder on the transport properties of graphene. We consider three types of disorder: nanohole size variations, adjacent nanohole mergers, and nanohole vacancies. Comparing our experimental results with the model, we find that the disorder primarily originates from nanohole size variations rather than nanohole mergers in square SLs. We further confirm the validity of our model by comparing the results with quantum transport simulations. Our findings highlight the applicability of our simple framework to predict and engineer disorder in patterned SLs, specifically correlating variations in the resultant SL patterns to the observed disorder. Our combined experimental and theoretical results could serve as a valuable guide for optimizing nanofabrication processes to engineer disorder in nanopatterned SLs.

cond-mat.mes-hall↗

arXiv2018

Dynamics of liquid crystal on hexagonal lattice

Nematic liquid crystal (LC) molecules adsorbed on two dimensional materials are aligned along the crystal directions of the hexagonal lattice. It was demonstrated that short electric pulses can reorient the aligned LC molecules in the preferred armchair direction of hexagonal boron nitride (h-BN). Several states with a variety of colors were obtained by changing the direction and strength of the electric pulses. The ab initio calculations based on density functional theory was carried out to determine the favorable adsorption configurations of the LC molecules on the h-BN surface. A non-volatile display, in which pixel resolution can be determined by grains of hexagonal surface, is proposed, which can offer a pathway towards dynamic high-quality pixels with low power consumption, and could define a new paradigm for all non-volatile display applications.

cond-mat.soft↗