arXiv subjects

Aidan P. Reddy

Publications and source records attributed to Aidan P. Reddy.

16 recordsLinked to original sources

arXiv2026

Anti-topological crystal and non-Abelian liquid in twisted semiconductor bilayers

We show that electron crystals compete closely with non-Abelian fractional Chern insulators in the half-filled second moiré band of twisted bilayer MoTe$_2$. Depending on the twist angle and microscopic model, these crystals can have non-zero or zero Chern numbers $C$. The $C=0$ crystal occurs because contributions to the total Chern number from the full first band (+1) and half-full second band (-1) cancel. This is counterintuitive because the first two non-interacting bands in a given valley have the same Chern number $+1$. For these two reasons, we call this crystal an anti-topological crystal. The anti-topological crystal is a novel type of electron crystal that may occur in systems with multiple Chern bands at filling factors $n>1$.

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arXiv2026

Quantum melting a Wigner crystal into Hall liquids

Recent experiments have shown that, counterintuitively, applying a magnetic field to a Wigner crystal can induce quantum Hall effects. In this Letter, we use variational Monte Carlo to show that a magnetic field can melt zero-field Wigner crystals into integer quantum Hall liquids. This melting originates from quantum oscillations in the liquid's ground state energy, which develops downward cusps at integer filling factors due to incompressibility. Our calculations establish a range of densities in which this quantum melting transition occurs.

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arXiv2025

Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering

We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path towards the realization of fractionalized topological states in a broad range of materials.

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arXiv2024

Magnetic Hofstadter cascade in a twisted semiconductor homobilayer

Transition metal dichalcogenide moiré homobilayers have emerged as a platform in which magnetism, strong correlations, and topology are intertwined. In a large magnetic field, the energetic alignment of states with different spin in these systems is dictated by both strong Zeeman splitting and the structure of the Hofstadter's butterfly spectrum, yet the latter has been difficult to probe experimentally. Here we conduct local thermodynamic measurements of twisted WSe$_2$ homobilayers that reveal a cascade of magnetic phase transitions. We understand these transitions as the filling of individual Hofstadter subbands, allowing us to extract the structure and connectivity of the Hofstadter spectrum of a single spin. The onset of magnetic transitions is independent of twist angle, indicating that the exchange interactions of the component layers are only weakly modified by the moiré potential. In contrast, the magnetic transitions are associated with stark changes in the insulating states at commensurate filling. Our work achieves a spin-resolved measurement of Hofstadter's butterfly despite overlapping states, and it disentangles the role of material and moiré effects on the nature of the correlated ground states.

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arXiv2024

Non-Abelian fractionalization in topological minibands

Motivated by the recent discovery of fractional quantum anomalous Hall states in moiré systems, we consider the possibility of realizing non-Abelian phases in topological minibands. We study a family of moiré systems, skyrmion Chern band models, which can be realized in two-dimensional semiconductor-magnet heterostructures and also capture the essence of twisted transition metal dichalcogenide homobilayers. We show using many-body exact diagonalization that, in spite of strong Berry curvature variations in momentum space, the non-Abelian Moore-Read state can be realized at half filling of the second miniband. These results demonstrate the feasibility of non-Abelian fractionalization in moiré systems without Landau levels and shed light on the desirable conditions for their realization. In particular, we highlight the prospect of realizing the Moore-Read state in twisted semiconductor bilayers.

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arXiv2024

Quantum anomalous Hall crystal at fractional filling of moiré superlattices

We predict the emergence a state of matter with intertwined ferromagnetism, charge order and topology in fractionally filled moiré superlattice bands. Remarkably, these quantum anomalous Hall crystals exhibit a quantized integer Hall conductance that is different than expected from the filling and Chern number of the band. Microscopic calculations show that this phase is robustly favored at half-filling ($ν=1/2$) at larger twist angles of the twisted semiconductor bilayer $t$MoTe$_2$

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arXiv2024

Mapping twist-tuned multiband topology in bilayer WSe$_2$

Semiconductor moiré superlattices have been shown to host a wide array of interaction-driven ground states. However, twisted homobilayers have been difficult to study in the limit of large moiré wavelength, where interactions are most dominant. Here, we conduct local electronic compressibility measurements of twisted bilayer WSe$_2$ (tWSe$_2$) at small twist angles. We demonstrate multiple topological bands which host a series of Chern insulators at zero magnetic field near a 'magic angle' around $1.23^\circ$. Using a locally applied electric field, we induce a topological quantum phase transition at one hole per moiré unit cell. Our work establishes the topological phase diagram of a generalized Kane-Mele-Hubbard model in tWSe$_2$, demonstrating a tunable platform for strongly correlated topological phases.

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arXiv2024

Band mixing in the quantum anomalous Hall regime of twisted semiconductor bilayers

Remarkable recent experiments have observed fractional quantum anomalous Hall (FQAH) effects at zero field and unusually high temperatures in twisted semiconductor bilayer $t$MoTe$_2$. Intriguing observations in these experiments such as the absence of integer Hall effects at twist angles where a fractional Hall effect is observed, do however remain unexplained. The experimental phase diagram as a function of twist angle remains to be established. By comprehensive numerical study, we show that band mixing has large qualitative and quantitative effects on the energetics of competing states and their energy gaps throughout the twist angle range $θ\leq 4^\circ$. This lays the ground for the detailed realistic study of a rich variety of strongly correlated twisted semiconductor multilayers and an understanding of the phase diagram of these fascinating systems.

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arXiv2023

Fractional Quantum Anomalous Hall Effect in a Graphene Moire Superlattice

The fractional quantum anomalous Hall effect (FQAHE), the analog of the fractional quantum Hall effect1 at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking. The demonstration of FQAHE could lead to non-Abelian anyons which form the basis of topological quantum computation. So far, FQAHE has been observed only in twisted MoTe2 (t-MoTe2) at moire filling factor v > 1/2. Graphene-based moire superlattices are believed to host FQAHE with the potential advantage of superior material quality and higher electron mobility. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene/hBN moire superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance Rxy = h/(ve^2) at filling factors v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moire superlattice respectively. These features are accompanied by clear dips in the longitudinal resistance Rxx. In addition, at zero magnetic field, Rxy equals 2h/e^2 at v = 1/2 and varies linearly with the filling factor-similar to the composite Fermi liquid (CFL) in the half-filled lowest Landau level at high magnetic fields. By tuning the gate displacement field D and v, we observed phase transitions from CFL and FQAH states to other correlated electron states. Our graphene system provides an ideal platform for exploring charge fractionalization and (non-Abelian) anyonic braiding at zero magnetic field, especially considering a lateral junction between FQAHE and superconducting regions in the same device.

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arXiv2023

Toward a global phase diagram of the fractional quantum anomalous Hall effect

Recent experiments on the twisted semiconductor bilayer system $t$MoTe$_2$ have observed integer and fractional quantum anomalous Hall effects, which occur in topological moiré bands at zero magnetic field. Here, we present a global phase diagram of $t$MoTe$_2$ throughout the filling range $0< n\leq 1$ substantiated by exact diagonalization calculations. At a magic angle, we find that the system resembles the lowest Landau level (LLL) to a remarkable degree, exhibiting an abundance of incompressible fractional quantum anomalous Hall states and compressible anomalous composite Fermi liquid states. Away from the magic angle, particle-hole symmetry is strongly broken. Some LLL-like features remain robust near half-filling, while others are replaced, predominantly by charge density waves near $n=0$ and anomalous Hall Fermi liquids near $n=1$. Among LLL-like phases, we find the anomalous composite Fermi liquid at $n=\frac{1}{2}$ to be most robust against deviations from the magic angle. Within the band-projected model, we show that strong particle-hole asymmetry above the magic angle results from interaction-enhanced quasiparticle dispersion near $n=1$. Our work sets the stage for future exploration of LLL-like and beyond-LLL phases in fractional quantum anomalous Hall systems.

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arXiv2023

Wigner Molecular Crystals from Multi-electron Moiré Artificial Atoms

Semiconductor moiré superlattices provide a versatile platform to engineer new quantum solids composed of artificial atoms on moiré sites. Previous studies have mostly focused on the simplest correlated quantum solid - the Fermi-Hubbard model - where intra-atom interactions are simplified to a single onsite repulsion energy U. These studies have revealed novel quantum phases ranging from Mott insulators to quantum anomalous Hall insulators at a filling of one electron per moiré unit cell. New types of quantum solids should arise at even higher filling factors where the multi-electron configuration of moiré artificial atoms provides new degrees of freedom. Here we report the experimental observation of Wigner molecular crystals emerging from multi-electron artificial atoms in twisted bilayer WS2 moiré superlattices. Moiré artificial atoms, unlike natural atoms, can host qualitatively different electron states due to the interplay between quantized energy levels and Coulomb interactions. Using scanning tunneling microscopy (STM), we demonstrate that Wigner molecules appear in multi-electron artificial atoms when Coulomb interactions dominate. Three-electron Wigner molecules, for example, are seen to exhibit a characteristic trimer pattern. The array of Wigner molecules observed in a moiré superlattice comprises a new crystalline phase of electrons: the Wigner molecular crystal. We show that these Wigner molecular crystals are highly tunable through mechanical strain, moiré period, and carrier charge type. Our study presents new opportunities for exploring quantum phenomena in moiré quantum solids composed of multi-electron artificial atoms.

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arXiv2023

Artificial atoms, Wigner molecules, and emergent Kagome lattice in semiconductor moiré superlattices

Semiconductor moiré superlattices comprise an array of artificial atoms and provide a highly tunable platform for exploring novel electronic phases. We introduce a theoretical framework for studying moiré quantum matter that treats intra-moiré-atom interactions exactly and is controlled in the limit of large moiré period. We reveal an abundance of new physics arising from strong electron interactions when there are multiple electrons within a moiré unit cell. In particular, at filling factor $n=3$, the Coulomb interaction within each three-electron moiré atom leads to a three-lobed ``Wigner molecule''. When their size is comparable to the moiré period, the Wigner molecules form an emergent Kagome lattice. Our work identifies two universal length scales characterizing the kinetic and interaction energies in moiré materials and demonstrates a rich phase diagram due to their interplay.

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arXiv2023

Zero-field composite Fermi liquid in twisted semiconductor bilayers

Recent experiments have produced evidence for fractional quantum anomalous Hall (FQAH) states at zero magnetic field in the semiconductor moiré superlattice system $t$MoTe$_2$. Here we argue that a composite fermion description, already a unifying framework for the phenomenology of 2d electron gases at high magnetic fields, provides a similarly powerful perspective in this new context. To this end, we present exact diagonalization evidence for composite Fermi liquid states at zero magnetic field in $t$MoTe$_2$ at fillings $n=\frac{1}{2}$ and $n=\frac{3}{4}$. We dub these non-Fermi liquid metals anomalous composite Fermi liquids (ACFLs), and we argue that they play a central organizing role in the FQAH phase diagram. We proceed to develop a long wavelength theory for this ACFL state that offers concrete experimental predictions upon doping the composite Fermi sea, including a Jain sequence of FQAH states and a new type of commensurability oscillations originating from the superlattice potential intrinsic to the system.

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arXiv2023

Fractional quantum anomalous Hall states in twisted bilayer MoTe$_2$ and WSe$_2$

We demonstrate via exact diagonalization that AA-stacked TMD homobilayers host fractional quantum anomalous Hall (FQAH) states with fractionally quantized Hall conductance at fractional fillings $n=\frac{1}{3},\, \frac{2}{3}$ and zero magnetic field. While both states are most robust at angles near $θ\approx 2^{\circ}$, the $n=\frac{1}{3}$ state gives way to a charge density wave with increasing twist angle whereas the $n=\frac{2}{3}$ state survives across a much broader range of twist angles. We show that the competition between FQAH states and charge density wave or metallic phases is primarily controlled by the wavefunctions and dispersion of the underlying Chern band, respectively. Additionally, Ising ferromagnetism is found across a broad range of fillings where the system is insulating or metallic alike. The spin gap is enhanced at filling fractions where integer and fractional quantum anomalous Hall states are formed.

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arXiv2023

Artificial intelligence for artificial materials: moiré atom

Moiré engineering in atomically thin van der Waals heterostructures creates artificial quantum materials with designer properties. We solve the many-body problem of interacting electrons confined to a moiré superlattice potential minimum (the moiré atom) using a 2D fermionic neural network. We show that strong Coulomb interactions in combination with the anisotropic moiré potential lead to striking ``Wigner molecule" charge density distributions observable with scanning tunneling microscopy.

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arXiv2022

Hofstadter states and reentrant charge order in a semiconductor moiré lattice

The emergence of moiré materials with flat bands provides a platform to systematically investigate and precisely control correlated electronic phases. Here, we report local electronic compressibility measurements of a twisted WSe$_2$/MoSe$_2$ heterobilayer which reveal a rich phase diagram of interpenetrating Hofstadter states and electron solids. We show that this reflects the presence of both flat and dispersive moiré bands whose relative energies, and therefore occupations, are tuned by density and magnetic field. At low densities, competition between moiré bands leads to a transition from commensurate arrangements of singlets at doubly occupied sites to triplet configurations at high fields. Hofstadter states (i.e., Chern insulators) are generally favored at high densities as dispersive bands are populated, but are suppressed by an intervening region of reentrant charge-ordered states in which holes originating from multiple bands cooperatively crystallize. Our results reveal the key microscopic ingredients that favor distinct correlated ground states in semiconductor moiré systems, and they demonstrate an emergent lattice model system in which both interactions and band dispersion can be experimentally controlled.

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