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Ailton J. Garcia Jr.

Publications and source records attributed to Ailton J. Garcia Jr..

4 recordsLinked to original sources

Coherent Control of Quantum-Dot Spins with Cyclic Optical Transitions

Solid-state spins are promising as interfaces from stationary qubits to single photons for quantum communication technologies. Semiconductor quantum dots have excellent optical coherence, exhibit near unity collection efficiencies when coupled to photonic structures, and possess long-lived spins for quantum memory. However, the incompatibility of performing optical spin control and single-shot readout simultaneously has been a challenge faced by almost all solid-state emitters. To overcome this, we leverage light-hole mixing to realize a highly asymmetric lambda system in a negatively charged heavy hole exciton in Faraday configuration. By compensating GHz-scale differential Stark shifts, induced by unequal coupling to Raman control fields, and by performing nuclear-spin cooling, we achieve quantum control of an electron-spin qubit with a $π$-pulse contrast of 97.4% while preserving spin-selective optical transitions with a cyclicity of 471 (50). We demonstrate this scheme for both GaAs and InGaAs quantum dots, and show that it is compatible with the operation of a nuclear quantum memory. Our approach thus enables repeated emission of indistinguishable photons together with qubit control, as required for single-shot readout, photonic cluster-state generation, and quantum repeater technologies.

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Optical and magnetic response by design in GaAs quantum dots

Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These properties are notoriously difficult to design in many solid-state systems, where spin-orbit coupling and the crystalline environment for each qubit create inhomogeneity of electronic g-factors and optically active states. Here, we show that GaAs quantum dots (QDs) obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k.p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission. Remarkably, our measurements and simulations track the in-plane electron g-factors through a zero-crossing from -0.1 to 0.3 and linear optical dipole moment orientations fully determined by an external magnetic field. The robustness of our results demonstrates the capability to design - prior to growth - the properties of a spin qubit and its tunable optical interface best adapted to a target magnetic and photonic environment with direct application for high-quality spin-photon entanglement.

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Electric-field control of photon indistinguishability in cascaded decays in quantum dots

Photon indistinguishability, entanglement, and antibunching are key ingredients in quantum optics and photonics. Decay cascades in quantum emitters offer a simple method to create entangled photon-pairs with negligible multi-pair generation probability. However, the degree of indistinguishability of the photons emitted in a cascade is intrinsically limited by the lifetime ratio of the involved transitions. Here we show that, for the biexciton-exciton cascade in a quantum dot, this ratio can be widely tuned by an applied electric field. Hong-Ou-Mandel interference measurements of two subsequently emitted biexciton photons show that their indistinguishability increases with increasing field, following the theoretically predicted behavior. At the same time, the emission linewidth stays close to the transform-limit, favoring applications relying on the interference among photons emitted by different sources.

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Post-fabrication tuning of circular Bragg resonators for enhanced emitter-cavity coupling

Solid-state quantum emitters embedded in circular Bragg resonators are attractive due to their ability to emit quantum states of light with high brightness and low multi-photon probability. As for any emitter-microcavity system, fabrication imperfections limit the spatial and spectral overlap of the emitter with the cavity mode, thus limiting their coupling strength. Here, we show that an initial spectral mismatch can be corrected after device fabrication by repeated wet chemical etching steps. We demonstrate ~16 nm wavelength tuning for optical modes in AlGaAs resonators on oxide, leading to a 4-fold Purcell enhancement of the emission of single embedded GaAs quantum dots. Numerical calculations reproduce the observations and suggest that the achievable performance of the resonator is only marginally affected in the explored tuning range. We expect the method to be applicable also to circular Bragg resonators based on other material platforms, thus increasing the device yield of cavity-enhanced solid-state quantum emitters.

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