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Ajay K. Poonia

Publications and source records attributed to Ajay K. Poonia.

2 recordsLinked to original sources

Modifying Electrochemical Doping in Light-Emitting Electrochemical Cells with Gold Nanoparticles

Electrochemical doping offers dynamic control of the electronic properties of organic semiconductors, and it is the enabling feature of a range of technologies, including electrochemical transistors, energy-storage devices, light-emitting electrochemical cells (LECs), and bioelectronics. Electrochemical doping is commonly controlled by the selection of the constituents in the active material of the device or the applied voltage bias, but herein we report that the incorporation of Au nanoparticles (Au-NPs) at an electrode interface can constitute an alternative control parameter. The LEC features balanced p- and n-type electrochemical doping that forms a p-n junction doping structure in its active material, and we find that it is possible to reshape this doping profile by incorporating Au-NPs at an electrode interface. Specifically, we establish that the inclusion of neat non-capped Au-NPs at the anodic interface shifts the p-n junction (i.e., the emission zone) away from the anode. In contrast, the inclusion of Au-NPs capped with sodium citrate is found to reverse this behavior, so that the emission zone is instead moved towards the anode. We utilize this control parameter to shift the emission zone towards a position of constructive (destructive) interference, as manifested in a strong increase (decrease) of the LEC emission efficiency. Our findings establish an interfacial strategy for modulating the spatial profile of electrochemical doping and tuning device performance without altering the chemistry of the active material, relying instead on the surface modification of one electrode. This approach is important because it provides a versatile and minimally invasive route to optimize electrochemical devices while preserving the intrinsic properties and formulation of the active material.

cond-mat.mtrl-sci

High-temperature observation of intralayer, interlayer, and Rydberg excitons in bulk van der Waals alloy single crystals

Transition metal dichalcogenides (TMDs) exhibit remarkable optical properties due to the diverse number of strongly bound excitons, which can be fine-tuned by alloying. Despite a flurry of research activity in characterizing these excitons, a comprehensive and profound understanding of their behavior with temperature is lacking. Here, we report the rich spectrum of excitonic features within bulk van der Waals alloy Mo$_{0.5}$W$_{0.5}$S$_2$ and Mo$_{0.5}$W$_{0.5}$Se$_2$ single crystals through temperature-dependent reflectance spectroscopy and first-principle calculations. We observed Rydberg excitons and interlayer excitons in both the single crystals. Notably, we provide the first experimental evidence of highly energetic A$^\prime$ and B$^\prime$ excitons in Mo$_{0.5}$W$_{0.5}$S$_2$ at room temperature. The strong carrier-phonon scattering significantly broadens the A$^\prime$, B$^\prime$ and interlayer excitons at room temperature in bulk Mo$_{0.5}$W$_{0.5}$S$_2$ single crystal compared to its selenide. Our findings, supported by density functional theory and Bethe-Salpeter equation calculations, signify the crucial role of carrier-phonon interactions. These results open pathways for next-generation optoelectronic devices and quantum technologies operating at high temperature.

cond-mat.mtrl-sci