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Ajit K. Patra

Publications and source records attributed to Ajit K. Patra.

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Ferrimagnetic hexagonal Mn$_2$CuGe Heusler alloy with a low-temperature spin-glass state

An extensive experimental investigation on the structural, static magnetic, and non-equilibrium dynamical properties of polycrystalline Mn$_2$CuGe Heusler alloy using powder X-ray diffraction, DC magnetization, magnetic relaxation, magnetic memory effect, and specific heat measurements is presented. Structural studies reveal that the alloy crystallizes in a mixed hexagonal crystal structure (space groups P3c1 (no. 158) and P6$_3$/mmc (no. 194)) with lattice parameters a = b = 7.18(4) $\mathring{A}$ and c = 13.12(4) $\mathring{A}$ for the majority phase. The DC magnetization analysis reveals a paramagnetic to ferrimagnetic phase transition around T$_C$ $\approx$ 682 K with a compensation of magnetization at $\approx$ 250 K, and a spin-glass transition around T$_P$ $\approx$ 25.6 K. The Néel theory of ferrimagnets supports the ferrimagnetic nature of the studied alloy and the estimated T$_C$ ($\approx$ 687 K) from this theory is consistent with that obtained from the DC magnetization data. A detailed study of non-equilibrium spin dynamics via magnetic relaxation and memory effect experiments shows the evolution of the system through a number of intermediate states and striking magnetic memory effect. Furthermore, heat capacity measurements suggest a large electronic contribution to the specific heat capacity suggesting strong spin fluctuations, due to competing magnetic interactions. All the observations render a spin-glass behavior in Mn$_2$CuGe, attributed to the magnetic frustration possibly arising out of the competing ferromagnetic and antiferromagnetic interactions.

cond-mat.mtrl-sci

Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts

We determine magnetoresistance effects in stable and clean permalloy nanocontacts of variable cross-section, fabricated by UHV deposition and in-situ electromigration. To ascertain the magnetoresistance (MR) effects originating from a magnetic domain wall, we measure the resistance values with and without such a wall at zero applied field. In the ballistic transport regime, the MR ratio reaches up to 50% and exhibits a previously unobserved sign change. Our results can be reproduced by recent atomistic calculations for different atomic configurations of the nanocontact, highlighting the importance of the detailed atomic arrangement for the MR effect.

cond-mat.mes-hall