Ajit Kumar Sahoo | Searcharxiv

arXiv2025

Spin Pumping in Magnetostrictive Galfenol Interfaced with Ta

In view of their advantages for memory and storage applications, the quest to find suitable magnetic thin film heterostructures that can exhibit strong spin pumping effect persists in the scientific community. Here, the spin pumping phenomenon is investigated in Ta/Galfenol (FeGa) thin film heterostructures by systematically varying the thickness of the heavy metallic Ta underlayer (UL). The films exhibit soft magnetic property with a bcc-phase with a notably low Gilbert damping obtained for FeGa on Si (100). The precessional magnetization dynamics of Ta/FeGa films are explored using time-resolved magneto-optical Kerr effect magnetometry, revealing the presence of a resonant Kittel mode and additional strain-induced modes. The lowest value of effective Gilbert damping in Ta/FeGa is obtained as ~ 0.015, which rises by ~ 65 % as the thickness of UL increases. Spin pumping and two-magnon scattering mechanisms are validated using a ballistic spin transport model. An overall effective spin mixing conductance value of ~ 5.48 $\times$ 10$^{15}$ cm$^{-2}$ is found, which is the highest value ever reported in magnetostrictive Galfenol films. Additionally, micromagnetic simulations are performed to understand the effect of tilted magnetic anisotropy on the formation of magnetic modes in these films. These findings in FeGa films establish it as an effective spin source material and offer innovative ideas to control spin-wave propagation and diverse applications in straintronics.

cond-mat.mtrl-sci↗

arXiv2020

Effect of Ti underlayer thickness on the magnetic anisotropy of TbFe thin films

In this study, we address the impact of Ti underlayer thickness (UL: 0-40 nm) on the structural, magnetic, and microscopic properties of TbFe thin films. The structural analysis confirmed the intermixing at interfaces of the Ti and TbFe layer with the increment of UL thicknesses. Out-of-plane (OOP) coercivity (Hc), and saturation field (Hs) gradually increased with an increase in UL thickness regardless of interface mixing. For UL = 10 nm, the domain contrast and OOP stray field strength were enhanced, which may be due to the extent of d-d hybridization dominated over the influence of interfacial roughness. While for UL = 20, and 40 nm, the extent of interfacial roughness dominated the hybridization effects and as a result, stray fields deteriorated. By placing UL of 20 nm, Hc increased by nearly 6 times more than the bare TbFe system. So, we observe a state with high OOP Hc combined with nearly zero OOP stray fields that are found to co-exist in the sample. The magnetization reversal studies on a large area reveal domain nucleation followed by domain-wall motion in all the films. The idea of tuning magnetic properties by varying thicknesses of Ti UL may useful in spintronics applications.

cond-mat.mes-hall↗