arXiv subjects

Akasha G. Hayden

Publications and source records attributed to Akasha G. Hayden.

2 recordsLinked to original sources

arXiv2026

Perturbative sensing of nanoscale materials with millimeter-wave photonic crystals

We introduce millimeter-wave silicon photonic crystal cavities as a versatile platform for the perturbative sensing of nanoscale materials. This dielectric-based platform is compatible with strong magnetic fields, opening avenues for studying quantum materials in extreme environments where superconducting cavities cannot operate. To establish the platform's performance, we cryogenically characterize a silicon photonic crystal cavity at 4.3 K, achieving a total quality factor exceeding $10^5$ for a 96 GHz mode. As a proof-of-concept for its sensing capabilities, we position a hexagonal boron nitride-multilayer graphene (hBN-MLG) heterostructure at an electric-field antinode of the cavity and measure the perturbative response at room temperature. The heterostructure induces a significant change in the cavity's resonance, from which we extract a total sample conductivity of approximately $5.1\times10^6$~S/m. These results establish silicon photonic crystal cavities as a promising platform for sensitive, on-chip spectroscopy of nanoscale materials at millimeter-wave frequencies.

cond-mat.mes-hall↗

arXiv2025

Surface and Bulk Two-Level System Losses in Lithium Niobate Acoustic Resonators

Lithium niobate (LN) is a promising material for building acoustic resonators used in quantum applications, but its performance is limited by poorly understood material defects called two-level systems (TLS). In this work, we fabricate high-performance acoustic resonators from LN with quality factors up to $6\times10^7$ and use them to separate bulk and surface contributions to TLS loss. By comparing these bulk acoustic wave (BAW) resonators with previous surface acoustic wave and phononic crystal studies, we show that devices with high surface participation ratios are limited by surface TLS, while our BAW devices reveal an intrinsic bulk TLS limit. Through systematic surface treatments and microscopy, we demonstrate that BAW resonator performance remains unchanged despite surface modifications, confirming operation in a bulk-limited regime. Our work establishes quantitative bounds on both surface and bulk TLS losses in LN, within the context of material growth and fabrication approaches we have pursued, and provides guidance for future device engineering and materials development.

cond-mat.mes-hall↗