arXiv subjects

Akashdeep Kamra

Publications and source records attributed to Akashdeep Kamra.

93 records · Page 6Linked to original sources

arXiv2013

Experimental test of the spin mixing interface conductivity concept

We perform a quantitative, comparative study of the spin pumping, spin Seebeck and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20 yttrium iron garnet/Pt samples. Our experimental results fully support present, exclusively spin current-based, theoretical models using a single set of plausible parameters for spin mixing conductance, spin Hall angle and spin diffusion length. Our findings establish the purely spintronic nature of the aforementioned effects and provide a quantitative description in particular of the spin Seebeck effect.

cond-mat.mtrl-sci↗

arXiv2010

The role of electron-electron scattering in spin transport

We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport.

cond-mat.mes-hall↗

arXiv2010

Spin relaxation due to electron-electron magnetic interaction in high Lande g-factor semiconductors

We investigate spin transport in InSb/InAlSb heterostructure using the Monte Carlo approach, generalized by including density matrix description of spin for taking spin dynamics into account. In addition to the dominant Dyakonov-Perel (DP) mechanism for spin control and relaxation, we consider magnetic interaction between electrons which assumes importance due to high electronic Lande g-factor in the material. It is found that while the effect of magnetic interaction is not important at low densities, it reduces the spin relaxation length by as much as 50% at higher densities. We also present a calculation which elucidates the suppression of decoherence attributed to wave vector dependent magnetic field in the DP relaxation mechanism. We note that magnetic interaction is a general relaxation mechanism which may assume importance in materials with high electronic Lande g-factor.

cond-mat.mes-hall↗