arXiv subjects

Akira Masago

Publications and source records attributed to Akira Masago.

4 recordsLinked to original sources

arXiv2025

Fully Compensated Ferrimagnetic Properties of (Cr,Fe)S Compound with a Pyrrhotite-type Structure

To optimize the processing conditions for the (Cr,Fe)S non-equilibrium phase with a pyrrhotite-type structure, the phase states and magnetic properties of the specimens obtained at various sintering temperatures were investigated. A slightly off-stoichiometric composition of Cr23Fe23S54 (approximately (Cr,Fe)7S8) sintered and quenched from 1323 K indicates a single-phase pyrrhotite-type structure with a layered-NiAs-type structure in which vacancies occupy every two layers (C12/c1; the space number is 15). The compound shows fully compensated ferrimagnetic behavior at a magnetization compensated temperature of approximately 200 K. The magnetic behavior exhibits a typical N-type ferrimagnet, as predicted by N\'eel. From X-ray photoelectron spectroscopy analyses, it is found that the compound is composed of Fe2+ and Cr3+. The large magnetic coercivity of 38 kOe at 5 K is also unique and can be applied to spintronic devices. Furthermore, changing the quenching temperature enables control of the degree of order of the vacancies in the interlayer and results in tuning of the magnetization compensated temperature. First-principles calculations show a pseudo-gap located at the Fermi level in the up-spin band, suggesting high spin polarization as well as the NiAs-type structure indicated in the previous our report.

cond-mat.mtrl-sci↗

arXiv2024

Giant memory function based on the magnetic field history of resistive switching under a constant bias voltage

Memristors, which are characterized by their unique input-voltage-history-dependent resistance, have garnered significant attention for the exploration of next-generation in-memory computing, reconfigurable logic circuits, and neural networks. Memristors are controlled by the applied input voltage; however, the latent potential of their magnetic field sensitivity for spintronics applications has rarely been explored. In particular, valuable functionalities are expected to be yielded by combining their history dependence and magnetic field response. Here, for the first time, we reveal a giant memory function based on the magnetic field history of memristive switching, with an extremely large magnetoresistance ratio of up to 32,900% under a constant bias voltage, using a two-terminal Ge-channel device with Fe/MgO electrodes. We attribute this behavior to colossal magnetoresistive switching induced by the d0 ferromagnetism of Mg vacancies in the MgO layers and impact ionization breakdown in the Ge substrate. Our findings may lead to the development of highly sensitive multi-field sensors, high-performance magnetic memory, and advanced neuromorphic devices.

physics.app-ph↗

arXiv2021

Low-temperature acanthite-like phase of Cu$_{2}$S: A first-principles study on electronic and transport properties

The mobility and disorder in the lattice of Cu atoms as liquid-like behavior is an important characteristic affecting the thermoelectric properties of Cu$_{2}$S. In this study, using a theoretical model called acanthite-like structure for Cu$_{2}$S at a low-temperature range, we systematically investigate the electronic structure, intrinsic defect formation, and transport properties by first-principles calculations. Thereby, previous experimental reports on the indirect bandgap nature of Cu$_{2}$S were confirmed in this work with an energy gap of about 0.9-0.95 eV. As a result, the optical absorption coefficient estimated from this model also gives a potential value of $α> 10^{4}$ cm$^{-1}$ in the visible spectrum range. According to the bonding analysis and formation energy aspect, Cu vacancy is the most preferred defect to form in Cu$_{2}$S, which primarily affects the conductive behavior as a $p$-type, as experimentally observed. Finally, the transport properties of Cu$_{2}$S system were successfully reproduced using an electron-phonon scattering method, highlighting the important role of relaxation time prediction in conductivity estimation instead of regarding it as a constant.

cond-mat.mtrl-sci↗

arXiv2020

First-principles calculation of electronic density of states and Seebeck coefficient in transition-metal-doped Si-Ge alloys

High $ZT$ value and large Seebeck coefficient have been reported in the nanostructured Fe-doped Si-Ge alloys. In this work, the large Seebeck coefficient in Fe-doped Si-Ge systems is qualitatively reproduced from the computed electronic density of states, where a hybrid functional, HSE06, is used for an exchange-correlation functional, as well as a special quasi-random structure (SQS) for a disordered atomic configuration. Furthermore, by replacing Fe with other transition metals, such as Mn, Co, Ni, Cu, Zn, and Au, a better dopant that produces a larger Seebeck coefficient in Si-Ge alloy systems is explored.

cond-mat.mtrl-sci↗