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Akira Miura

Publications and source records attributed to Akira Miura.

At least 37 records · Page 2Linked to original sources

Observing and modeling the sequential pairwise reactions that drive solid-state ceramic synthesis

Solid-state synthesis from powder precursors is the primary processing route to advanced multicomponent ceramic materials. Designing ceramic synthesis routes is usually a laborious, trial-and-error process, as heterogeneous mixtures of powder precursors often evolve through a complicated series of reaction intermediates. Here, we show that phase evolution from multiple precursors can be modeled as a sequence of pairwise interfacial reactions, with thermodynamic driving forces that can be efficiently calculated using ab initio methods. Using the synthesis of the classic high-temperature superconductor YBa$_2$Cu$_3$O$_{6+x}$ (YBCO) as a representative system, we rationalize how replacing the common BaCO$_3$ precursor with BaO$_2$ redirects phase evolution through a kinetically-facile pathway. Our model is validated from in situ X-ray diffraction and in situ microscopy observations, which show rapid YBCO formation from BaO$_2$ in only 30 minutes. By combining thermodynamic modeling with in situ characterization, we introduce a new computable framework to interpret and ultimately design synthesis pathways to complex ceramic materials.

cond-mat.mtrl-sci↗

Growth and anisotropy evaluation of NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals

NbBiCh$_3$ (Ch = S, Se) misfit-layered superconducting single crystals were successfully grown using a CsCl/KCl flux for the first time. The obtained crystals had a well-developed habit parallel to the c-plane with a typical width of 1-2 mm and thickness of 10-40 um. The superconducting transition temperatures with zero resistivity of NbBiS$_3$ single crystals obtained from the nominal composition of Nb0.9Bi1.2S3 was 0.31 K, and that value of the NbBiSe$_3$ single crystals grown from the stoichiometry composition (NbBiSe$_3$) was 2.3 K. Sharp decreases in electric resistivity and magnetic susceptibility at approximately 3 K suggested a possible superconducting transition temperature of NbBiSe$_3$. The normal-state anisotropy values of grown NbBiS$_3$ and NbBiSe$_3$ single crystals were 2.2-2.4 and 1.5-1.6, respectively.

cond-mat.supr-con↗

Structural phase diagram of LaO1-xFxBiSSe: suppression of the structural phase transition by partial F substitutions

We have investigated low-temperature crystal structure of BiCh2-based compounds LaO1-xFxBiSSe (x = 0, 0.01, 0.02, 0.03, and 0.5), in which anomalous two-fold-symmetric in-plane anisotropy of superconducting states has been observed for x = 0.5. From synchrotron X-ray diffraction experiments, a structural transition from tetragonal to monoclinic was observed for x = 0 and 0.01 at 340 and 240 K, respectively. For x = 0.03, a structural transition and broadening of the diffraction peak were not observed down to 100 K. These facts suggest that the structural transition could be suppressed by 3% F substitution in LaO1-xFxBiSSe. Furthermore, the crystal structure for x = 0.5 at 4 K was examined by low-temperature (laboratory) X-ray diffraction, which confirmed that the tetragonal structure is maintained at 4 K for x = 0.5. Our results suggest that the two-fold-symmetric in-plane anisotropy of superconducting states observed for LaO0.5F0.5BiSSe was not originated from structural symmetry lowering.

cond-mat.supr-con↗

Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal

Recently, two-fold symmetric in-plane anisotropy of the superconducting properties have been observed in a single crystal of BiCh2-based (Ch: S, Se) layered superconductor LaO0.5F0.5BiSSe having a tetragonal (four-fold-symmetric) in-plane structure; the phenomena are very similar to those observed in nematic superconductors. To explore the origin of the two-fold symmetric anisotropy in the BiCh2-based system, we have investigated the electron-doping dependence on the anisotropy by examining the in-plane anisotropy of the magnetoresistance in the superconducting states for a single crystal of LaO0.9F0.1BiSSe under high magnetic fields up to 15 T. We observed a two-fold symmetry of in-plane anisotropy of magnetoresistance for LaO0.9F0.1BiSSe. The results obtained for LaO0.9F0.1BiSSe are quite similar to those observed for LaO0.5F0.5BiSSe, which has a higher electron doping concentration than LaO0.9F0.1BiSSe. Our present finding suggests that the emergence of the in-plane symmetry breaking in the superconducting state is robust to the carrier concentration in the series of LaO1-xFxBiSSe.

cond-mat.supr-con↗

Evolution of two bulk-superconducting phases in Sr0.5RE0.5FBiS2 (RE: La, Ce, Pr, Nd, Sm) by external hydrostatic pressure effect

Polycrystalline samples of Sr1-xRExFBiS2 (RE: La, Ce, Pr, Nd, and Sm) were synthesized via the solid-state reaction and characterized using synchrotron X-ray diffraction. Although all the Sr0.5RE0.5FBiS2 samples exhibited superconductivity at transition temperatures (Tc) within the range of 2.1-2.7 K under ambient pressure, the estimated superconducting volume fraction was small. This indicated the non-bulk nature of superconductivity in these samples under ambient pressure. A dramatic evolution of the bulk superconducting phases was achieved on applying an external hydrostatic pressure. Near pressures below 1 GPa, bulk superconductivity was induced with a Tc of 2.5-2.8 K, which is termed as the low-P phase. Moreover, the high-P phase (Tc = 10.0-10.8 K) featuring bulk characteristics was observed at higher pressures. Pressure-Tc phase diagrams indicated that the critical pressure for the emergence of the high-P phase tends to increase with decreasing ionic radius of the doped RE ions. According to the high-pressure X-ray diffraction measurements of Sr0.5La0.5FBiS2, a structural phase transition from tetragonal to monoclinic also occurred at approximately 1.1 GPa. Thus, this phase transition indicates a pressure-induced superconducting-superconducting transition similar to the transition in LaO0.5F0.5BiS2. Bulk superconducting phases in Sr0.5RE0.5FBiS2 induced by the external hydrostatic pressure effect are expected to be useful for evaluating the mechanisms of superconductivity in BiCh2-based superconductors.

cond-mat.supr-con↗

Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2

We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdO0.8F0.2Sb1-xAsxSe2 (x < 0.7), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal P4/nmm space group (No. 129) at room temperature. The lattice parameter c decreases with increasing x, while a remains almost unchanged among the samples. Despite isovalent substitution of As for Sb, electrical resistivity significantly rises with increasing x. Very low thermal conductivity of less than 0.8 W/mK is observed at temperatures between 300 and 673 K for all the examined samples. For As-doped samples, the thermal conductivity further decreases above 600 K. Temperature-dependent synchrotron X-ray diffraction indicates that an anomaly also occurs in the c-axis length at around 600 K, which may relate to the thermal transport properties.

cond-mat.mtrl-sci↗

Bulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex

We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition temperature (Tc) was 3.0 K for x = 0.6. A superconductivity phase diagram of CeOBiS2-xSex was established based on Tc estimated from the electrical resistivity and magnetization measurements. The emergence of superconductivity in CeOBiS2-xSex was explained with two essential parameters of in-plane chemical pressure and carrier concentration, which systematically changed with increasing Se concentration.

cond-mat.supr-con↗

Growth of superconducting Sm(O,F)BiS2 single crystals

Superconducting Sm(O,F)BiS2 single crystals were successfully grown using KI-KCl flux. The obtained single crystals were flat-shaped and their size was 500um. The structure and composition of the obtained single crystals were obtained using X-ray diffraction and X-ray spectroscopy. The lattice constants of the obtained Sm(O,F)BiS2 single crystals were evaluated to be a = 3.9672(4) A and c = 13.417(6) A, while their F/(O + F) molar ratio was approximately 0.17. The superconducting transition temperature of the obtained Sm(O,F)BiS2 single crystals was 4.8 K. This was different from the reported Sm(O,F)BiS2 with no superconducting transition above 2 K. The superconducting anisotropies of the upper critical field and effective mass model of the obtained Sm(O,F)BiS2 single crystals were estimated to be approximately 26 and 10, respectively.

cond-mat.supr-con↗

Pressure-induced superconductivity in layered pnictogen diselenide NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$ (x = 0.3 and 0.7)

Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an increase in Bi content x. Crystal structure analysis using synchrotron X-ray diffraction suggests that insulator to metal transition upon Bi doping correlates with anomalous change in c-axis length and/or corrugation in conducting layer. The emergence of superconductivity under high pressure is demonstrated using diamond anvil cell (DAC) with boron-doped diamond electrodes, for x = 0.3 and 0.7 as the representative samples. For Sb-rich one (x = 0.3), we observed a superconducting transition with Tconset = 5.3 K at 50 GPa, which is the first-ever report of the superconductivity in layered SbCh2-based (Ch: chalcogen) compounds. The Tconset of x = 0.3 increased with increasing pressure and reached 7.9 K at 70.8 GPa, followed by the gradual decrease in Tc up to 90 GPa. For Bi-rich one (x = 0.7), a superconducting transition with Tconset = 5.9 K was observed at 43.5 GPa, which is the almost comparable to that of x = 0.3; besides, upper critical field (Hc2) is evaluated to be ~10 T for x = 0.7, which is higher than that of x = 0.3 (Hc2 = 6.7 T at 50 GPa).

cond-mat.supr-con↗

Improvement of superconducting properties by chemical pressure effect in Eu-doped La2-xEuxO2Bi3Ag0.6Sn0.4S6

We have investigated the substitution effect of Eu on the superconductivity in La2-xEuxO2Bi3Ag0.6Sn0.4S6. Recently, we reported an observation of superconductivity at 0.5 K in a layered oxychalcogenide La2O2Bi3AgS6. The Sn doping at the Ag site was found to raise the superconducting transition temperature, Tc to 2.5 K in La2O2Bi3Ag0.6Sn0.4S6. To further improve the superconducting properties, we have partially substituted Eu for the La site to increase the chemical pressure in La2-xEuxO2Bi3Ag0.6Sn0.4S6 (x = 0.1 to 0.6). With the increase in Eu concentration, x, the lattice constant a was found to shrink, while the lattice constant c was marginally shortened, which suggests that the chemical pressure induced by the Eu doping is uniaxial along the a-axis. Tc was observed to increase with increasing x up to x = 0.4, further decreasing for higher Eu concentrations of x = 0.5 and 0.6. From the magnetic susceptibility and resistivity measurements, the bulk nature of superconductivity has been observed for x = 0.1 to 0.5 with Tc = 2.5 to 4.0 K, respectively. The upper critical field (Bc2) was noted to be 3.5 T for x = 0.4, which also has the highest Tc.

cond-mat.supr-con↗

Enhanced superconductivity by Na doping in SnAs-based layered compound Na$_{1+x}$Sn$_{2-x}$As$_2$

Superconducting transition temperature (Tc) reported in SnAs-based layered compound NaSn$_2$As$_2$ varies from 1.2 to 1.6 K, implying that its superconductivity is critically sensitive to non-stoichiometry. Here, we demonstrate that Na-doping on the Sn site (Na$_{1+x}$Sn$_{2-x}$As$_2$) is effective in enhancing superconductivity, leading to Tc = 2.1 K for x = 0.4. First-principles calculation indicates that such a doping, or Na$_{\rm Sn}$ antisite defects, is energetically favored over other cation vacancies. Our results pave the way for increasing Tc of layered tin pnictide superconductors.

cond-mat.supr-con↗

Growth and characterization of (La,Ce)OBiS2 single crystals

(La,Ce)OBiS2 single crystals are successfully grown using CsCl flux. The obtained single crystals have a plate-like shape with a size of 0.5-2.0 mm and a well-developed ab-plane. The thickness of the crystals increases with a decrease in the Ce content. The (La,Ce)OBiS2 single crystals exhibit superconducting properties. Moreover, the superconducting transition temperature increases with an increase in the Ce content. The obtained (La,Ce)OBiS2 single crystals exhibit a tetragonal structure and the valence state of Ce in the crystals is determined to be mixed with Ce3+ and Ce4+ based on X-ray absorption fine structure spectroscopy.

physics.app-ph↗

Growth and transport properties under high pressure of PrOBiS2 single crystals

PrOBiS2 single crystals were successfully grown using a KCl flux. The obtained crystals had a plate-like shape with a typical size of 0.5-1.0 mm and well-developed ab-plane. The Pr valence of the grown crystals, as determined by an X-ray absorption fine structure spectroscopy analysis, was almost trivalent. The PrOBiS2 single crystals did not exhibit superconductivity down to 0.25 K. The transport properties under high pressures up to 50 GPa ensured semiconducting behavior for 2-300 K using a diamond anvil cell.

cond-mat.supr-con↗

Improvement of superconducting properties by high mixing entropy at blocking layers in BiS2-based superconductor REO0.5F0.5BiS2

To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined samples with different DSmix, the increase in DSmix does not largely affect the bond lengths and the bond angle of the BiS2 conducting layer but clearly suppresses the in-plane disorder at the in-plane S1 site, which is the parameter essential for the emergence of bulk superconductivity in the REO0.5F0.5BiS2 system. Bulk nature of superconductivity is enhanced by the increase in DSmix for the present samples. The results of this work clearly show that the increase in mixing entropy at the blocking layer can positively affect the emergence of bulk superconductivity in the conducting layer, which is the evidence of the interaction between the high entropy states of the blocking layers and the physical properties of the conducting layers.

cond-mat.supr-con↗

Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$

Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect of Bi substitution on the thermoelectric properties of SbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The room temperature electrical resistivity is decreased to 8.0 * 10^-5 ohmm for x = 0.4. The electrical power factor is calculated to be 1.4 * 10^-4 W/mK^2 at 660 K, which is in reasonable agreement with combined Jonker and Ioffe analysis. The room-temperature lattice thermal conductivity of less than 1 W/mK is almost independent of x, in contrast to the point-defect scattering model for conventional alloys. The present work provides an avenue for exploring SbSe2-based insulating and BiSe2-based conducting systems.

cond-mat.mtrl-sci↗

Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms

Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1-2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) A, b = 4.109(7) A, c = 13.233(15) A, beta = 97.94(7) deg. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its in-plane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K.

cond-mat.supr-con↗

Na1-xSn2P2 as a new member of van der Waals-type layered tin pnictide superconductors

Superconductors with a van der Waals (vdW) structure have attracted a considerable interest because of the possibility for truly two-dimensional (2D) superconducting systems. We recently reported NaSn2As2 as a novel vdW-type superconductor with transition temperature (Tc) of 1.3 K. Herein, we present the crystal structure and superconductivity of new material Na1-xSn2P2 with Tc = 2.0 K. Its crystal structure consists of two layers of a buckled honeycomb network of SnP, bound by the vdW forces and separated by Na ions, as similar to that of NaSn2As2. Amount of Na deficiency (x) was estimated to be 0.074(18) using synchrotron X-ray diffraction. Bulk nature of superconductivity was confirmed by the measurements of electrical resistivity, magnetic susceptibility, and specific heat. First-principles calculation using density functional theory shows that Na1-xSn2P2 and NaSn2As2 have comparable electronic structure, suggesting higher Tc of Na1-xSn2P2 is resulted from increased density of states at the Fermi level due to Na deficiency. Because there are various structural analogues with tin-pnictide (SnPn) conducting layers, our results indicate that SnPn-based layered compounds can be categorized into a novel family of vdW-type superconductors, providing a new platform for studies on physics and chemistry of low-dimensional superconductors.

cond-mat.supr-con↗

Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)

Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2- with F- ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging.

cond-mat.mtrl-sci↗