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Aksa Thomas

Publications and source records attributed to Aksa Thomas.

3 recordsLinked to original sources

Moire-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers

We report light emission from the moire superlattice of a twisted bilayer of tungsten diselenide (WSe2/WSe2) encapsulated in insulating hexagonal boron nitride (hBN). The low-temperature photoluminescence (PL) spectroscopy reveals signatures of moire-potential induced strong interlayer excitonic emission and phonon-assisted recombination, while the twisting significantly suppresses the emission from localized defect-bound excitons. The moire potential redistributes carriers into indirect valleys, thereby enhancing recombination efficiency and stabilizing the interlayer excitons. Our findings establish that precise control of twist angle and dielectric environment provides a new route for engineering excitonic systems for exploring exciton-phonon interactions and associated quantum phenomena in transition metal dichalcogenides.

cond-mat.mes-hall

Tuning the magnetic properties in MPS3 (M = Mn, Fe, and Ni) by proximity-induced Dzyaloshinskii Moriya interactions

Tailoring the quantum many-body interactions in layered materials through appropriate heterostructure engineering can result in emergent properties that are absent in the constituent materials thus promising potential future applications. In this article, we have demonstrated controlling the otherwise robust magnetic properties of transition metal phosphorus trisulphides (Mn/Fe/NiPS3) in their heterostructures with Weyl semimetallic MoTe2 which can be attributed to the Dzyaloshinskii Moriya (DM) interactions at the interface of the two different layered materials. While the DM interaction is known to scale with the strength of the spin-orbit coupling (SOC), we also demonstrate here that the effect of DM interaction strongly varies with the spin orientation/dimensionality of the magnetic layer and the low-energy electronic density of state of the spin-orbit coupled layer. The observations are further supported by a series of experiments on heterostructures with a variety of substrates/underlayers hosting variable SOC and electronic density of states.

cond-mat.mes-hall

Symmetry breaking and structure instability in ultra-thin 2H-TaS2 across charge density wave transition

Ultra-thin 2D materials have shown complete paradigm shift of understanding of physical and electronic properties because of confinement effects, symmetry breaking and novel phenomena at nanoscale. Bulk 2H-TaS2 undergoes an incommensurate charge density wave (I-CDW) transition temperature, TI-CDW - 76 K, however, onset of CDW in atomically thin layers is not clear. We explored the evidence of CDW instability in exfoliated atomically thin 2H-TaS2 using low temperature Raman spectroscopy. We have emphasized on CDW associated modes, M1 - 125 cm-1, M2 -158 cm-1, and M3 -334 cm-1, with thickness - 3 nm (one unit-cell). The asymmetric (Fano) line shape of M2 suggests evidence of strong electron-phonon coupling, which mainly drives the CDW instability. Our observations provide key evidence that the CDW can persists even in one-unit cell with a TI-CDW well above - 200 K, which is higher than bulk 2H-TaS2.

cond-mat.mes-hall